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Dive into the research topics where Norbert Urbansky is active.

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Featured researches published by Norbert Urbansky.


Microelectronic Engineering | 2002

Investigation of long throw PVD of titanium films from polycrystalline targets with texture

H. Wolf; Reinhard Streiter; W. Tirschler; H. Giegengack; Norbert Urbansky; Thomas Gessner

The influence of target properties on the deposition of titanium films by long throw sputtering has been studied using Monte Carlo simulation. The precise knowledge and consideration of existing textures is shown to be a necessary prerequisite for the correct prediction of deposition rates and the radial dependence of film thickness as well. The experimental investigation of target textures has been carried out both by electron backscatter diffraction and X-ray diffraction. The results are compared and discussed.


Microelectronic Engineering | 2002

Advanced Hi-Fill® for interconnect liner applications

Norbert Urbansky; S.R Burgess; Sven Schmidbauer; U Heydenreich; H Donohue; I Moncrieff; C Görgens

Ti/TiN liner and barrier deposition for low contact resistance tungsten plug interconnect metallisation schemes represent a major challenge for current and future aspect ratios of interconnect vias. For Ti, bottom coverage is important to minimise contact and via resistance and for TiN, good sidewall coverage is required to maintain the integrity of the W fill process. This paper describes the fundamental operation and characterisation of a novel ionised dual metal/metal nitride deposition chamber--Advanced Hi-Fill®. Discussed is the incorporation of Advanced Hi-Fill® technology into a BEOL production environment. Production data for via level interconnects manufactured in a 0.17-µm logic product as well as contact level for a 0.14-µm DRAM product is presented.


Microelectronic Engineering | 2000

Extendibility of ultra throw Ti-barriers passivated in nitrogen

Sven Schmidbauer; Norbert Urbansky; Wilhelm Claussen; C Goergens; Alexander Ruf

Abstract This study involves evaluation of a Ti liner deposited by long throw (i.e. Hi-fill ® and ULTRA) and comparison of different cooling regimes using Ar and N 2 as atmosphere in the case of ULTRA. The use of N 2 -based cooling led to a surface passivation against oxidation. Therefore the effective Ti-thickness could be reduced by a factor of 1.5. Surface analysis and electrical results are discussed within the paper.


Archive | 2013

Semiconductor structure and method for making same

Jakob Kriz; Norbert Urbansky


Archive | 2001

Method for fabricating a contact layer

Sven Schmidbauer; Norbert Urbansky


Archive | 2014

Protection Layers for Conductive Pads and Methods of Formation Thereof

Dirk Meinhold; Norbert Mais; Reimund Engl; Hans-Joerg Timme; Alfred Vater; Stephan Henneck; Norbert Urbansky


Archive | 2000

Production of a contact layer used in the production of diodes, resistors and transistors comprises sputtering a first contact layer in the trench of a substrate, and sputtering a second contact layer on the first layer

Sven Schmidbauer; Norbert Urbansky


Archive | 2003

Method for making contact with a doping region of a semiconductor component

Alexander Ruf; Norbert Urbansky; Wilhelm Claussen; Thomas Gärtner; Sven Schmidbauer


Archive | 2014

Elektrode, elektronische Vorrichtung und Verfahren zur Herstellung einer optoelektronischen Vorrichtung

Markus Fischer; Dirk Meinhold; Sven Schmidbauer; Norbert Urbansky


Archive | 2013

ELECTRODE, AN ELECTRONIC DEVICE, AND A METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE

Dirk Meinhold; Sven Schmidbauer; Markus Fischer; Norbert Urbansky

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Jan Rupf

Infineon Technologies

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