Norihiko Nakata

Athermal and tunable operations of 850 nm vertical cavity surface emitting lasers with thermally actuated T-shape membrane structure

We demonstrate the athermal operation and the wavelength tuning of 850 nm GaAs-based vertical cavity surface emitting lasers with a thermally actuated cantilever structure. The thermal actuation of a top distributed Bragg reflector mirror enables us to compensate the temperature drift of lasing wavelengths. The temperature dependence of lasing wavelengths could be controlled from −0.011 nm/K to −0.18 nm/K by changing the cantilever length. In addition, a T-shape membrane structure was introduced for efficient electro-thermal tuning. A small temperature dependence of −0.011 nm/K and wavelength tuning of 4 nm were obtained.

Controlled temperature dependence of lasing wavelength of VCSELs with a thermally actuated cantilever

We demonstrate the first widely controlled temperature dependence of lasing wavelength of VCSELs using a thermally actuated cantilever. The temperature dependence of wavelengths is successfully controlled from −0.15nm/K to 0.32nm/K.

Proposal of multi-wavelength integration of athermal GaAs VCSEL array with thermally actuated cantilever structure

We propose a multi-wavelength and athermal VCSEL array with thermally-actuated cantilevers. The lithography-defined cantilever structure enables on-chip multi-wavelength integration. The experiment shows the wavelength spacing of 20 nm for 2-ch VCSEL array with different cantilever lengths.

Wavelength trimming of MEMS VCSELs for post-process wavelength allocation

We demonstrate the wavelength trimming of MEMS VCSELs by etching the cantilever-shaped top mirror using FIB. This technique can be used for the post-process precise wavelength allocation of athermal MEMS VCSELs. Experimental results show a possibility of realizing both red-shift and blue-shift wavelength changes by choosing the etching area of the cantilever.

Athermal and tunable VCSELs with a thermally actuated cantilever structure for WDM optical interconnects

We demonstrate the athermal operation and the wavelength tuning of 850nm GaAs-based vertical cavity surface emitting lasers with a thermally actuated cantilever structure. The thermal actuation of a top DBR mirror enables us to compensate the temperature drift of lasing wavelengths. A small temperature dependence of -0.011 nm/K and wavelength tuning of 4 nm were obtained with a newly designed T-shape membrane structure at the same time.

Giant Wavelength–Temperature Dependence of a Micro Machined Vertical Cavity Surface Emitting Laser with a Thermally Actuated Cantilever Structure

We present the modeling and the experimental result of a micro machined vertical cavity surface emitting laser with a thermally actuated semiconductor/SiO2 cantilever structure. The modeling result shows a giant wavelength–temperature dependence of over 3.5 nm/K. The fabricated device exhibits a temperature dependence of 0.79 nm/K, which is 10 times larger than that of conventional vertical cavity surface emitting lasers (VCSELs).

Electro-thermal tuning of MEMS VCSEL with giant wavelength-temperature dependence

We demonstrate the electro-thermal tuning of a MEMS VCSEL with a thermally actuated SiO2/semiconductor cantilever. The wavelength-temperature dependence of the MEMS VCSEL could be increased as large as 0.46nm/K, which is 6 times larger than that of conventional single-mode lasers. A micro-heater is integrated nearby the cantilever structure. A continuous wavelength tuning range of 4.7nm is obtained with heating power of 29mW.

Giant wavelength-temperature dependence and electro-thermal tuning of MEMS VCSEL

We present the giant wavelength-temperature dependence and the electro-thermal tuning of a MEMS VCSEL with a thermally actuated SiO2/semiconductor cantilever. A tuning range of 4.7 nm is obtained with heating power of 29 mW.

Wavelength tuning and athermal operations of micro-machined VCSELs for uncooled WDM applications

We successfully demonstrated the wavelength tuning and athermal operation of micro machined VCSELs at the same time. A small temperature dependence of below 0.002 nm/K is realized with precise continuous wavelength tuning of 1.1 nm.

Giant wavelength-temperature dependence of VCSEL with thermally actuated cantilever structure

We present the modeling and the experimental result of a micro-machined VCSEL with a thermally actuated semiconductor/SiO2 cantilever structure. The modeling result shows a giant wavelength-temperature dependence of over 3.5 nm/K. The fabricated device exhibits a temperature dependence of 0.79 nm/K, which is 10 times larger than that of conventional VCSELs.