Norikazu Mizuochi

Ultralong spin coherence time in isotopically engineered diamond

As quantum mechanics ventures into the world of applications and engineering, materials science faces the necessity to design matter to quantum grade purity. For such materials, quantum effects define their physical behaviour and open completely new (quantum) perspectives for applications. Carbon-based materials are particularly good examples, highlighted by the fascinating quantum properties of, for example, nanotubes or graphene. Here, we demonstrate the synthesis and application of ultrapure isotopically controlled single-crystal chemical vapour deposition (CVD) diamond with a remarkably low concentration of paramagnetic impurities. The content of nuclear spins associated with the (13)C isotope was depleted to 0.3% and the concentration of other paramagnetic defects was measured to be <10(13) cm(-3). Being placed in such a spin-free lattice, single electron spins show the longest room-temperature spin dephasing times ever observed in solid-state systems (T2=1.8 ms). This benchmark will potentially allow observation of coherent coupling between spins separated by a few tens of nanometres, making it a versatile material for room-temperature quantum information processing devices. We also show that single electron spins in the same isotopically engineered CVD diamond can be used to detect external magnetic fields with a sensitivity reaching 4 nT Hz(-1/2) and subnanometre spatial resolution.

Multipartite entanglement among single spins in diamond.

Robust entanglement at room temperature is a necessary requirement for practical applications in quantum technology. We demonstrate the creation of bipartite- and tripartite-entangled quantum states in a small quantum register consisting of individual 13C nuclei in a diamond lattice. Individual nuclear spins are controlled via their hyperfine coupling to a single electron at a nitrogen-vacancy defect center. Quantum correlations are of high quality and persist on a millisecond time scale even at room temperature, which is adequate for sophisticated quantum operations.

Coherent coupling of a superconducting flux qubit to an electron spin ensemble in diamond

During the past decade, research into superconducting quantum bits (qubits) based on Josephson junctions has made rapid progress. Many foundational experiments have been performed, and superconducting qubits are now considered one of the most promising systems for quantum information processing. However, the experimentally reported coherence times are likely to be insufficient for future large-scale quantum computation. A natural solution to this problem is a dedicated engineered quantum memory based on atomic and molecular systems. The question of whether coherent quantum coupling is possible between such natural systems and a single macroscopic artificial atom has attracted considerable attention since the first demonstration of macroscopic quantum coherence in Josephson junction circuits. Here we report evidence of coherent strong coupling between a single macroscopic superconducting artificial atom (a flux qubit) and an ensemble of electron spins in the form of nitrogen–vacancy colour centres in diamond. Furthermore, we have observed coherent exchange of a single quantum of energy between a flux qubit and a macroscopic ensemble consisting of about 3 × 107 such colour centres. This provides a foundation for future quantum memories and hybrid devices coupling microwave and optical systems.

Highly sensitive nanoscale spin-torque diode

Highly sensitive microwave devices that are operational at room temperature are important for high-speed multiplex telecommunications. Quantum devices such as superconducting bolometers possess high performance but work only at low temperature. On the other hand, semiconductor devices, although enabling high-speed operation at room temperature, have poor signal-to-noise ratios. In this regard, the demonstration of a diode based on spin-torque-induced ferromagnetic resonance between nanomagnets represented a promising development, even though the rectification output was too small for applications (1.4 mV mW(-1)). Here we show that by applying d.c. bias currents to nanomagnets while precisely controlling their magnetization-potential profiles, a much greater radiofrequency detection sensitivity of 12,000 mV mW(-1) is achievable at room temperature, exceeding that of semiconductor diode detectors (3,800 mV mW(-1)). Theoretical analysis reveals essential roles for nonlinear ferromagnetic resonance, which enhances the signal-to-noise ratio even at room temperature as the size of the magnets decreases.

Coherence of single spins coupled to a nuclear spin bath of varying density

The dynamics of single electron and nuclear spins in a diamond lattice with different 13 C nuclear spin concentration is investigated. It is shown that coherent control of up to three individual nuclei in a dense nuclear spin cluster is feasible. The free-induction decays of nuclear spin Bell states and single nuclear coherences among 13 C nuclear spins are compared and analyzed. Reduction in a free-induction-decay time T2 and a coherence time T2 upon increase in nuclear spin concentration has been found. For pure diamond, T 2 as long as 30 s and T2 of up to 0.65 ms for the electron spin has been observed. The 13 C concentration dependence of T 2 is explained by Fermi contact and dipolar interactions with nuclei in the lattice. It has been found that T2 decreases approximately as 1 / n, where n is 13 C concentration, which corresponds to the reported theoretical line of T2 for an electron spin interacting with a nuclear spin bath.

Germanium-Vacancy Single Color Centers in Diamond

Atomic-sized fluorescent defects in diamond are widely recognized as a promising solid state platform for quantum cryptography and quantum information processing. For these applications, single photon sources with a high intensity and reproducible fabrication methods are required. In this study, we report a novel color center in diamond, composed of a germanium (Ge) and a vacancy (V) and named the GeV center, which has a sharp and strong photoluminescence band with a zero-phonon line at 602 nm at room temperature. We demonstrate this new color center works as a single photon source. Both ion implantation and chemical vapor deposition techniques enabled fabrication of GeV centers in diamond. A first-principles calculation revealed the atomic crystal structure and energy levels of the GeV center.

Opposite signs of voltage-induced perpendicular magnetic anisotropy change in CoFeB|MgO junctions with different underlayers

We report a voltage-induced perpendicular magnetic anisotropy (PMA) change in sputter-deposited Ta|CoFeB|MgO and Ru|CoFeB|MgO junctions. The PMA change is quantitatively evaluated by the field dependence of the tunneling magnetoresistance for various bias voltages. We find that both the sign and amplitude of the voltage effect depend on the underlayer, Ta or Ru, below the CoFeB layer. The rf voltage-induced ferromagnetic resonance spectra also support the underlayer-material-dependent direction of the voltage torque. The present study shows that the underlayer is one of the key parameters for controlling the voltage effect.

Pulse voltage-induced dynamic magnetization switching in magnetic tunneling junctions with high resistance-area product

We investigated pulse voltage-induced dynamic magnetization switchings in magnetic tunneling junctions with a high resistance-area product of 2 kΩ μm2. We found that bistable switching and the oscillatory behavior of switching probability as a function of voltage pulse duration are realized at a lower current density (−1.1 × 105 A/cm2) than in conventional spin-transfer-torque-induced magnetization switching. In addition, the switching probability at different voltage pulse strengths confirmed the existence of a voltage torque induced by a change in perpendicular magnetic anisotropy. This voltage-induced magnetization switching can be a useful technique in future spintronics devices with fast and highly reliable writing processes.

Towards realizing a quantum memory for a superconducting qubit: storage and retrieval of quantum states.

We have built a hybrid system composed of a superconducting flux qubit (the processor) and an ensemble of nitrogen-vacancy centers in diamond (the memory) that can be directly coupled to one another, and demonstrated how information can be transferred from the flux qubit to the memory, stored, and subsequently retrieved. We have established the coherence properties of the memory and succeeded in creating an entangled state between the processor and memory, demonstrating how the entangled states coherence is preserved. Our results are a significant step towards using an electron spin ensemble as a quantum memory for superconducting qubits.

Perfect selective alignment of nitrogen-vacancy centers in diamond

Nitrogen-vacancy (NV) centers in diamond have attracted significant interest because of their excellent spin and optical characteristics for quantum information and metrology. To take advantage of the characteristics, the precise control of the orientation of the N-V axis in the lattice is essential. Here we show that the orientation of more than 99 % of the NV centers can be aligned along the [111]-axis by CVD homoepitaxial growth on (111)-substrates. We also discuss about mechanisms of the alignment. Our result enables a fourfold improvement in magnetic-field sensitivity and opens new avenues to the optimum design of NV center devices.