Norman A. Blum
Johns Hopkins University
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IEEE Transactions on Biomedical Engineering | 1991
Norman A. Blum; Bliss G. Carkhuff; Harry K. Charles; Richard L. Edwards; Richard A. Meyer
Multisite, passive microprobes have been developed to allow simultaneous recording of action potential activity from multiple neurons at different locations in the brain. The microprobes were fabricated using standard integrated-circuit techniques. The probe is a planar structure that consists of gold electrodes sandwiched between two polyimide dielectric layers and bonded to a molybdenum structural support. Windows in the top dielectric layer expose the electrode sites and bonding pads. In two distinct versions of the probe, four or six recording sites of approximately 25 mu m/sup 2/ are arranged on a dagger-shaped structure which can penetrate the pia. The bonding pads and interconnect wires at the probe head are entirely encapsulated in a tubular fixture that is packed with silicone RTV and sealed with epoxy to protect the interconnections from contact with body fluids. The site impedances at 1 kHz are typically between 2 and 4 M Omega . Probe lifetimes for continuous immersion in physiological saline solution, as measured by impedance, have exceeded 750 h. The failure mechanism is believed to be due to moisture and ion absorption in the top dielectric layer.<<ETX>>
Journal of Electronic Materials | 1978
Charles Feldman; Norman A. Blum; Harry K. Charles; Frank G. Satkiewicz
Vacuum deposited, polycrystalline silicon films were fabricated into planar photovoltaic diodes by double diffusion techniques. Scanning electron microscopy showed that the crystallites are columnar in shape, with grain lengths several times larger than grain diameters. The dependency of average grain diameter on deposition conditions is discussed. Secondary ion mass spectrometry was used to obtain doping profiles and junction depths. Dark and illuminated I-V curves, spectral responses, and minority carrier diffusion lengths are presented for photovoltaic devices having grain sizes in the range 0.2 to 5 μm. Samples formed on sapphire and on a special alkaline-earth aluminosillcate glass processed under the same conditions had similar photovoltaic characteristics. Data on open-circuit voltage, short-circuit current, and solar cell efficiency are presented as functions of average grain diameter.
Journal of The Less Common Metals | 1981
Charles Feldman; Frank G. Satkiewicz; Norman A. Blum
Abstract Stoichiometric TiB 2 films 1–2 μm thick on Al 2 O 3 substrates were examined as base electrodes in vacuum-deposited silicon photovoltaic cells. The TiB 2 films were formed by sequential vacuum deposition of titanium and boron, and this was followed by a diffusion reaction at high temperature (950 °C). Silicon layers were deposited on top of the TiB 2 layers at substrate temperatures up to 1250 °C. The interactions between the layers were examined by secondary ion mass spectrometry, scanning electron microscopy and X-ray diffractometry. A TiB 2 Si interaction resulting in the formation of TiSi 2 was identified. The TiSi 2 at the SiTiB 2 interface stimulates the growth of large silicon crystallites. Evidence of a reaction between the TiB 2 and the Al 2 O 3 substrate was observed, but the reaction products could not be identified.
Physics Letters A | 1970
Richard B. Frankel; D. J. Sellmeyer; Norman A. Blum
Abstract Measurements of the hyperfine interactions in 57 Fe in the CsCl structure intermetallic compounds FeAl, CoAl and NiAl are reported.
Solid State Communications | 1974
Norman A. Blum; Charles Feldman
Abstract Comparison of the 125Te Mossbauer spectra in amorphous and crystalline Te films indicates that in the amorphous phase the quadrupole splitting is slightly greater and the recoil-free fraction about one-third as great as in the crystalline phase. These changes are interpreted as indicating a decrease in the length of the covalent bond between the nearest neighbor Te atoms in the amorphous state, and furthermore that dangling bonds at the ends of the Te chains are responsible for a change in the density of phonon states in the system.
Thin Solid Films | 1982
Charles Feldman; Frank G. Satkiewicz; Norman A. Blum
Abstract The problem of fabricating low cost solar cells on foreign substrates has been addressed through the use of vacuum-deposited polycrystalline silicon films. The experimental cells consisted of the following layers on an Al 2 O 3 substrate: TiB 2 bottom electrode/p-type polycrystalline silicon film/n-type silicon region/TiAg electrode. The formation and properties of each layer are described. Interfacial reactions and purity were examined by secondary ion mass spectrometry, X-ray diffraction and scanning electron microscopy. A reactionbettween silicon and TiB 2 resulting in large silicon crystallite growth has been identified. The n-type region was formed by standard phosphorus diffusion techniques. Typical photovoltaic responses without an antireflection coating were V oc = 0.28 V, J sc = 18 mA cm -2 , an efficiency of 2.7% and a fill factor of 0.55. The factors limiting the cell efficiency were primarily the grain size and the purity of the p-type silicon layer.
Hyperfine Interactions | 1992
Norman A. Blum; Richard B. Frankel
Longitudinal magnetization of a57Co in iron metal foil source and an iron metal foil absorber in a uniform external magnetic field results in a simple three-line magnetic hyperfine absorption spectrum. Measurement of the spectral splitting as a function of applied magnetic field yields the57Fe excited-and ground-state,g-factors.
Archive | 1982
Charles Feldman; Frank G. Satkiewicz; Norman A. Blum; K. G. Hoggarth
A method for antimony doping silicon polycrystalline thin films and single crystals has been investigated. The method is compatible with the concept of forming photovoltaic cells completely in a vacuum system. Layers of Sb2O3- and Si were deposited either simultaneously or sequentially through masks onto the silicon surface. Heating (e.g. 1100° C, 1 hr) in either an inert atmosphere or oxygen brought about the formation of an SiOx -Sb glassy layer and caused Sb to diffuse into the base silicon surface. The oxide complex is then etched off leaving n-type regions on the surface. Reactions of the layers were examined by secondary ion mass spectrometry and X-ray diffraction.
Physical Review Letters | 1967
Richard B. Frankel; Norman A. Blum; Brian B. Schwartz; Duk Joo Kim
Physica Status Solidi (a) | 1977
Norman A. Blum; Charles Feldman; Frank G. Satkiewicz