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Norman L. Turner

Varian Semiconductor

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Publication

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Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms | 1987

Design considerations of a VLSI compatible production MeV ion implantation system

Norman L. Turner; Kenneth H. Purser; Manny Sieradzki

Abstract An MeV Ion Implantation System has been developed to address the requirements for VLSI wafer fabrication. These requirements are discussed with respect to considerations for machine design. The system is reviewed and its performance evaluated.

Archive | 2006

Controlling the characteristics of implanter ion-beams

Kenneth H. Purser; Harald A. Enge; Norman L. Turner

Archive | 1987

Treating workpieces with beams

Kenneth H. Purser; Norman L. Turner

Archive | 2003

Method and apparatus for scanning a workpiece in a vacuum chamber

Norman L. Turner; Kenneth H. Purser

Archive | 2003

Emittance measuring device for ion beams

Kenneth H. Purser; Carl J. Russo; Norman L. Turner

Archive | 1987

Platen and beam setup flag assembly for ion implanter

Norman L. Turner

Archive | 2005

Broad energy-range ribbon ion beam collimation using a variable-gradient dipole

Kenneth H. Purser; Norman L. Turner

Archive | 2005

Beam neutralization in low-energy high-current ribbon-beam implanters

Kenneth H. Purser; Norman L. Turner

Archive | 2005

Resonance method for production of intense low-impurity ion beams of atoms and molecules

Kenneth H. Purser; Albert E. Litherland; Norman L. Turner

Archive | 2003

Controlling the characteristics of ribbon-shaped implanter ion-beams

Kenneth H. Purser; Harald A. Enge; Norman L. Turner

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Kenneth H. Purser

University of Toronto

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Kenneth H. Purser

University of Toronto

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Harald A. Enge

Varian Semiconductor

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Albert E. Litherland

Varian Semiconductor

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Carl J. Russo

Varian Associates

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A.E. Litherland

University of Toronto

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