NoSoung Myoung

Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes

Brighter perovskite LEDs Organic-inorganic hybrid perovskites such as methyl ammonium lead halides are attractive as low-cost light-emitting diode (LED) emitters. This is because, unlike many inorganic nanomaterials, they have very high color purity. Cho et al. made two modifications to address the main drawback of these materials, their low luminescent efficiency. They created nanograin materials lacking free metallic lead, which helped to confine excitons and avoid their quenching. The perovskite LEDs had a current efficiency similar to that of phosphorescent organic LEDs. Science, this issue p. 1222 Efficient organic-inorganic perovskite light-emitting diodes were made with nanograin crystals that lack metallic lead. Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

Multicolored Organic/Inorganic Hybrid Perovskite Light‐Emitting Diodes

Bright organic/inorganic hybrid perov-skite light-emitting diodes (PrLEDs) are realized by using CH3 NH3 PbBr3 as an emitting layer and self-organized buffer hole-injection layer (Buf-HIL). The PrLEDs show high luminance, current efficiency, and EQE of 417 cd m(-2) , 0.577 cd A(-1) , and 0.125%, respectively. Buf-HIL can facilitate hole injection into CH3 NH3 PbBr3 as well as block exciton quenching.

Highly Efficient, Color-Reproducible Full-Color Electroluminescent Devices Based on Red/Green/Blue Quantum Dot-Mixed Multilayer

Over the past few years the performance of colloidal quantum dot-light-emitting diode (QLED) has been progressively improved. However, most of QLED work has been fulfilled in the form of monochromatic device, while full-color-enabling white QLED still remains nearly unexplored. Using red, green, and blue quantum dots (QDs), herein, we fabricate bichromatic and trichromatic QLEDs through sequential solution-processed deposition of poly(9-vinlycarbazole) (PVK) hole transport layer, two or three types of QDs-mixed multilayer, and ZnO nanoparticle electron transport layer. The relative electroluminescent (EL) spectral ratios of constituent QDs in the above multicolored devices are found to inevitably vary with applied bias, leading to the common observation of an increasing contribution of a higher-band gap QD EL over low-band gap one at a higher voltage. The white EL from a trichromatic device is resolved into its primary colors through combining with color filters, producing an exceptional color gamut of 126% relative to National Television Systems Committee (NTSC) color space that a state-of-the-art full-color organic LED counterpart cannot attain. Our trichromatic white QLED also displays the record-high EL performance such as the peak values of 23,352 cd/m(2) in luminance, 21.8 cd/A in current efficiency, and 10.9% in external quantum efficiency.

Palladium-Decorated Hydrogen-Gas Sensors Using Periodically Aligned Graphene Nanoribbons

Polymer residue-free graphene nanoribbons (GNRs) of 200 nm width at 1 μm pitch were periodically generated in an area of 1 cm(2) via laser interference lithography using a chromium interlayer prior to photoresist coating. High-quality GNRs were evidenced by atomic force microscopy, micro-Raman spectroscopy, and X-ray photoelectron spectroscopy measurements. Palladium nanoparticles were then deposited on the GNRs as catalysts for sensing hydrogen gases, and the GNR array was utilized as an electrically conductive path with less electrical noise. The palladium-decorated GNR array exhibited a rectangular sensing curve with unprecedented rapid response and recovery properties: 90% response within 60 s at 1000 ppm and 80% recovery within 90 s in nitrogen ambient. In addition, reliable and repeatable sensing behaviors were revealed when the array was exposed to various gas concentrations even at 30 ppm.

Energy scaling of 4.3 μm room temperature Fe:ZnSe laser

We demonstrate a fourfold increase of the output energy of the gain-switched mid-IR Fe:ZnSe laser. Iron doping of the ZnSe polycrystalline samples was realized using a postgrowth thermal-diffusion method from the metal film. Gain-switched Er:Cr:YSGG (2.8 μm) laser pumped Fe:ZnSe lasing was studied in a Fabry-Perot cavity over a 236-300 K temperature range. The maximum output energy reached 4.7 mJ at 4.3 μm and 3.6 mJ at 4.37 μm at 236 K and 300 K and was limited only by available pump energy. The laser threshold was about 8 mJ and was practically unchanged over the studied temperature range. The laser slope efficiencies, measured with respect to the input pump energy, decreased from 19% to 16% with an increase of temperature from 236 to 300 K. The output radiation featured a Gaussian spatial profile with M(2) = 2.6.

Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes

Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions.

Localized surface plasmon-enhanced green quantum dot light-emitting diodes using gold nanoparticles

We develop a localized surface plasmon (LSP)-enhanced CdSe/ZnS green quantum dot (QD) light-emitting diode (LED) containing Au nanoparticles (NPs) embedded in a ZnO electron transport layer. Au NPs blended in ZnO solution are directly spin coated onto the QD emissive layer to provide strong coupling between LSPs in Au NPs and excitons in QDs, greatly enhancing the electroluminescence (EL). Photoluminescence (PL) and EL intensities are greatly enhanced by 4.12 and 4.33-fold, respectively. Maximum PL and EL enhancement ratios of 4.47 and 4.54 are observed at 535 and 532 nm, respectively, and these are similar to the LSP resonance wavelength of 536 nm for Au NPs in ZnO films. The results indicate that the EL enhancement of the QD-LED is attributed to strong resonance coupling between excitons in the QDs and LSPs in the Au NPs in ZnO films.

Solution processed vertically stacked ZnO sheet-like nanorod p–n homojunctions and their application as UV photodetectors

One long-standing goal in the development of one-dimensional nanostructured electronic devices is to facilitate the ongoing trend of miniaturization so as to enable ultralow power operation. Zinc oxide (ZnO) nanostructures, which have a direct and wide bandgap, are a central component in numerous electronic and optoelectronic applications. Here, we address vertically stacked ZnO sheet-like nanorod (SLNR) p–n homojunctions composed of single-crystalline undoped (n-type) and Li-doped (p-type) ZnO SLNRs by a multi-step solution-based hydrothermal route. Precise control of the molar concentration represented one of the basic factors in ensuring that the p–n homojunctions possessed appropriate densities and suitable morphologies. An extensive analysis of the luminescence features was carried out in order to identify p-type conduction in the Li-doped ZnO SLNRs. In addition, the SLNR-based p–n homojunctions exhibited distinct electrical features that validated their potential use as ultraviolet photodetectors, thereby spurring progress in the development of practical optoelectronics.

Light‐Emitting Diodes with Hierarchical and Multifunctional Surface Structures for High Light Extraction and an Antifouling Effect

Bioinspired hierarchical structures on the surface of vertical light-emitting diodes (VLEDs) are demonstrated by combining a self-assembled dip-coating process and nanopatterning transfer method using thermal release tape. This versatile surface structure can efficiently reduce the total internal reflection and add functions, such as superhydrophobicity and high oleophobicity, to achieve an antifouling effect for VLEDs.

Blending of n-type Semiconducting Polymer and PC61BM for an Efficient Electron-Selective Material to Boost the Performance of the Planar Perovskite Solar Cell

The highly efficient CH3NH3PbI3 perovskite solar cell (PeSC) is simply achieved by employing a blended electron-transport layer (ETL) consisting of PC61BM and P(NDI2OD-T2). The high molecular weight of P(NDI2OD-T2) allows for a thinned ETL with a uniform morphology that optimizes the PC61BM ETL more effectively. As a result of this enhancement, the power conversion efficiency of a PC61BM:P(NDI2OD-T2)-based PeSC is 25% greater than that of the conventional PC61BM based-PeSC; additionally, the incorporation of P(NDI2OD-T2) into PC61BM attenuates the dependence of the PeSC on the ETL-processing conditions regarding its performance. It is revealed that, in addition to the desirable n-type semiconducting characteristics of PC61BM:P(NDI2OD-T2)-including a higher electron-mobility and a more-effective electron selectivity of a blended ETL for an efficient electron extraction-the superior performance of a PC61BM:P(NDI2OD-T2) device is the result of a thinned and uniformly covered ETL on the perovskite layer.