O. E. Tereshchenko

Inertness and degradation of (0001) surface of Bi2Se3 topological insulator

Inertness of the cleaved (0001) surface of the Bi2Se3 single crystal, grown by modified Bridgman method, to oxidation has been demonstrated by X-ray photoelectron spectroscopy, scanning tunneling microscopy, and by ab initio DFT calculations. No intrinsic bismuth and selenium oxides are formed on the low-defect, atomically flat Bi2Se3(0001)-(1×1) surface after a long-time air exposure. The inertness of Bi2Se3(0001) to O2 and NO2, as well as bismuth-oxygen bonding formation under molecular adsorption in the Se vacancy was supported by DFT calculations.

Unoccupied topological states on bismuth chalcogenides

The unoccupied part of the band structure of topological insulators Bi

Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

_2

Melt growth of bulk Bi2Te3 crystals with a natural p–n junction

Te

Probing the Electronic Properties of Individual MnPc Molecules Coupled to Topological States

_{x}

Experimental Realization of a Topological p-n Junction by Intrinsic Defect Grading.

Se

Soft nitridation of GaAs(100) by hydrazine sulfide solutions: Effect on surface recombination and surface barrier

_{3-x}

Systematics of Molecular Self-Assembled Networks at Topological Insulators Surfaces

(

Dual nature of magnetic dopants and competing trends in topological insulators

x=0,2,3

Unoccupied topological surface state in Bi2Te2Se

) is studied by angle-resolved two-photon photoemission and density functional theory. For all surfaces linearly-dispersing surface states are found at the center of the surface Brillouin zone at energies around 1.3 eV above the Fermi level. Theoretical analysis shows that this feature appears in a spin-orbit-interaction induced and inverted local energy gap. This inversion is insensitive to variation of electronic and structural parameters in Bi