O N Krokhin

High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide

The parameters of high-power multimode laser diodes featuring a radiation wavelength of 808 nm obtained on the basis of asymmetric heterostructures with an ultrawide waveguide in the systems of AlGaAs/GaAs and (Al)GaInP/GaInAsP/GaAs are compared. In the lasers based on an AlGaAs/GaAs system, the maximum optical power was limited by optical degradation of the SiO2/Si mirrors and amounted to 4.7 W. In the lasers based on an (Al)GaInP/GaInAsP/GaAs system, the maximum optical power was limited by thermal saturation and equaled 7 W. The obtained results show that the (Al)GaInP/GaInAsP/GaAs system is more reliable from the standpoint of an increase in both the maximum optical power and operation life of lasers.

Spectral features and thermal resistance of 976-nm cw laser diodes with a power up to 15 W

The spectral characteristics of cw laser diodes with a maximum reliable power of 15 W mounted on F-mount heat sinks are studied. It is found that the spectrum envelopes have features at emission powers exceeding 5 – 7 W. A method for determining the maximum of a spectrum envelope under the conditions of its broadening and appearance of features is discussed. The thermal resistance of diodes is determined experimentally at pump currents from threshold to maximum (14 A) and is found to be 2.25 K W-1 at a current of 10 A and 1.5 K W-1 at a current of 4 A. The results obtained are compared with the literature data. The adequacy of using the thermal resistance parameter for comparing and estimating thermal characteristics of laser diodes is considered.

Laser-quality oxide Y3Al5O12 ceramics. Comparative studies of its basic characteristics and laser ceramics of a known manufacturer

The effect of sintering aids of SiO2, ZrO2, B2O3, and MgO oxides on the optimum sintering temperature, ceramics grain growth, total volume of residual pores, and optical quality of obtained ceramics is studied. The best combinations of sintering aids are found; as a result, YAG:Nd (1 at%) samples of ceramics of high optical quality are obtained. An original method for characterizing laser properties of ceramics is developed. Comparative measurements of main laser characteristics of the obtained ceramics and ceramics of the Konoshima Chemical Corp. Ltd wellknown in the world practice, are performed.

Limiting parameters of high-power single-stripe laser diodes in the range of 800–808 nm in the pulsed mode

Experimental results on the study of the output parameters of high-power continuous-wave (cw) laser diodes operating in the pulsed mode and the results of numerical simulation of the total efficiency of laser diodes with cavity lengths of 3 and 4 mm in a wide range of pump currents are presented. The spectral parameters of the high-power laser diodes are studied at various pulse-repetition rates. The possible causes of the limited output power in the pulsed mode are discussed.

The peculiarities of spectra in high power 970 laser diodes

We present the results of optical power, total efficiency and spectra of CW laser diodes emitting at wavelength 970 nm. Total efficiency in maximum 72% was measured and reliable operation at 15 W CW was achieved. At the base of measured CW spectral parameters in wide range of pump currents we discuss the possible reasons of observed features in dependences of spectral envelope, spectral maximum and spectral half-width against pumping current.

60-W continuous wave laser diode arrays emitting at a wavelength of 808 nm

Samples of cw laser diode arrays (LDAs) with an output power higher than 60 W emitting in the spectral range of 808 nm are developed and fabricated. Main output parameters, including light–current, current–voltage characteristics, and emission spectra of a lot of 5 LDAs are measured.

Laser technologies for processing wide band-gap semiconductors and insulators: Nonlinear absorption mechanisms

The results of the theoretical study of damage and nonlinear light absorption mechanisms in transparent materials, i.e., wide band-gap semiconductors and insulators, are presented. It is shown that ablation processes in transparent materials exposed to laser pulses with intensity of the order of tens of TW/cm2 and pulse duration of the order of hundreds femtoseconds are efficient for various surface treatment technologies. The mechanism of tunneling nonlinear light absorption is studied. Ablation thresholds of GaN and other transparent materials such as sapphire (Al2O3), vitreous SiO2, and the same SiO2 with Ge impurity are determined. It is found that the ablation threshold depends on the band gap (absorption band edge) Eg as Eg3, which is in good agreement with experiment.

Thermal Condition of High-Power Laser Diodes

Light-current and current-voltage characteristics of a set of high-power laser diodes of the spectral region of 980 nm, fabricated by the authors, are experimentally studied. The dependences of their total efficiency and heat load on the pump current are constructed. The latter experimental dependence is used for calculations in the three-dimensional thermal model of the laser diode with a stripe contact width of 100 µm. Thermal fields are studied and isothermal surfaces are constructed for laser diodes fabricated on C-mount heat sink elements under heat loads corresponding to output powers of 10 W and higher in continuous mode.