O. R. Roberts

Direct observation of Schottky to Ohmic transition in Al-diamond contacts using real-time photoelectron spectroscopy

Evans D A, Roberts O R, Vearey-Roberts A R, Langstaff D P, Twitchen D J and Schwitters M 2007 Direct observation of Schottky to ohmic transition in Al-diamond contacts using realtime photoelectron spectroscopy Appl. Phys. Lett. 91 132114 doi:10.1063/1.2790779

Molecular organization in organic semiconductor thin films observed in real time

Post-deposition molecular rearrangement in thin organic films is revealed by in situ real-time photoelectron spectroscopy during organic molecular beam deposition. Agreement between real time spectroscopy and Monte Carlo modeling confirms the role of nearest-neighbor molecular attraction in driving a time-dependent morphology for oriented films of tin phthalocyanine (SnPc) on a range of substrates. The time-dependent molecular self-organization occurs over timescales comparable to the growth rates and is therefore an important factor in the degradation of thin films of organic semiconductors typically considered for the fabrication of multilayer semiconductor devices.

Real-time monitoring of the evolving morphology and molecular structure at an organic-inorganic semiconductor interface : SnPc on GaAs(001)

An organic-III-V hybrid semiconductor interface has been studied using real-time photoelectron spectroscopy and x-ray absorption spectroscopy to reveal the evolving morphology and molecular structure within the organic layer during thin film growth. This new approach to in situ characterization has been enabled by electron detection using a direct electron-counting array detector coupled to a hemispherical electron analyzer. The nonplanar tin phthalocyanine (SnPc) molecules initially form a uniform layer within which they have a distinct molecular orientation relative to the S-passivated gallium arsenide substrate surface [GaAs:S(001)]. The critical thickness of 0.9 nm that marks the transition between layered and clustered growth, determined from the photoemission measurements, corresponds to a single molecular layer with the molecules oriented at an angle of (39 +/- 2)degrees to the substrate plane. This value is confirmed by angle-resolved near-edge x-ray absorption fine structure measurements in the same experimental environment. However, the angle is less for the thicker films as the molecule-molecule interaction dominates over the molecule-substrate interaction and the structure is close to that of the bulk triclinic SnPc crystal

High temperature photoelectron emission and surface photovoltage in semiconducting diamond

A non-equilibrium photovoltage is generated in semiconducting diamond at above-ambient temperatures during x-ray and UV illumination that is sensitive to surface conductivity. The H-termination of a moderately doped p-type diamond (111) surface sustains a surface photovoltage up to 700 K, while the clean (2 × 1) reconstructed surface is not as severely affected. The flat-band C 1s binding energy is determined from 300 K measurement to be 283.87 eV. The true value for the H-terminated surface, determined from high temperature measurement, is (285.2 ± 0.1) eV, corresponding to a valence band maximum lying 1.6 eV below the Fermi level. This is similar to that of the reconstructed (2 × 1) surface, although this surface shows a wider spread of binding energy between 285.2 and 285.4 eV. Photovoltage quantification and correction are enabled by real-time photoelectron spectroscopy applied during annealing cycles between 300 K and 1200 K. A model is presented that accounts for the measured surface photovoltage in terms of a temperature-dependent resistance. A large, high-temperature photovoltage that is sensitive to surface conductivity and photon flux suggests a new way to use moderately B-doped diamond in voltage-based sensing devices.

Transport and optical gaps and energy band alignment at organic-inorganic interfaces

The transport and optical band gaps for the organic semiconductor tin (II) phthalocyanine (SnPc) and the complete energy band profiles have been determined for organic-inorganic interfaces between SnPc and III-V semiconductors. High throughput measurement of interface energetics over timescales comparable to the growth rates was enabled using in situ and real-time photoelectron spectroscopy combined with Organic Molecular Beam Deposition. Energy band alignment at SnPc interfaces with GaAs, GaP, and InP yields interface dipoles varying from −0.08 (GaP) to −0.83 eV (GaAs). Optical and transport gaps for SnPc and CuPc were determined from photoelectron spectroscopy and from optical absorption using spectroscopic ellipsometry to complete the energy band profiles. For SnPc, the difference in energy between the optical and transport gaps indicates an exciton binding energy of (0.6 ± 0.3) eV.

What Makes the Digital "Special"? The Research Program in Digital Collections at the National Library of Wales.

This article introduces some of the digital projects currently in development at the National Library of Wales as part of its Research Program in Digital Collections. These projects include the digital representation of the Librarys Kyffin Willams art collection, musical collections, and probate collection, and of materials collected by the Library of the Welsh experience of the First World War. Although different, they are driven by the need to ensure that the digital delivery of special collections provide opportunities that go beyond what is possible using the originals only, thus attempting to retain, or re-discover, their specialness in digital form.