O. Rader

Giant Rashba splitting in graphene due to hybridization with gold

Graphene in spintronics is predominantly considered for spin current leads of high performance due to weak intrinsic spin-orbit coupling of the graphene π electrons. Externally induced large spin-orbit coupling opens the possibility of using graphene in active elements of spintronic devices such as the Das-Datta spin field-effect transistor. Here we show that Au intercalation at the graphene-Ni interface creates a giant spin-orbit splitting (~100 meV) of the graphene Dirac cone up to the Fermi energy. Photoelectron spectroscopy reveals the hybridization with Au 5d states as the source for this giant splitting. An ab initio model of the system shows a Rashba-split spectrum around the Dirac point of graphene. A sharp graphene-Au interface at the equilibrium distance accounts for only ~10 meV spin-orbit splitting and enhancement is due to the Au atoms in the hollow position that get closer to graphene and do not break the sublattice symmetry.Graphene in spintronics [1] has so far primarily meant spin current leads of high performance because the intrinsic spin-orbit coupling of its π electrons is very weak [2–4]. If a large spin-orbit coupling could be created by a proximity effect, the material could also form active elements of a spintronic device such as the Das-Datta spin field-effect transistor [5], however, metal interfaces often compromise the band dispersion of massless Dirac fermions [6]. Our measurements show that Au intercalation at the graphene-Ni interface creates a giant spin-orbit splitting (∼ 100 meV) in the graphene Dirac cone up to the Fermi energy. Photoelectron spectroscopy reveals hybridization with Au5d states as the source for the giant spin-orbit splitting. An ab initio model of the system shows a Rashba-split dispersion with the analytically predicted gapless band topology around the Dirac point of graphene and indicates that a sharp graphene-Au interface at equilibrium distance will account for only ∼ 10 meV spin-orbit splitting. The ab initio calculations suggest an enhancement due to Au atoms that get closer to the graphene and do not violate the sublattice symmetry.

Tolerance of topological surface states towards magnetic moments: Fe on Bi2Se3.

We study the effect of Fe impurities deposited on the surface of the topological insulator Bi(2)Se(3) by means of core-level and angle-resolved photoelectron spectroscopy. The topological surface state reveals surface electron doping when the Fe is deposited at room temperature and hole doping with increased linearity when deposited at low temperature (~8 K). We show that in both cases the surface state remains intact and gapless, in contradiction to current belief. Our results suggest that the surface state can very well exist at functional interfaces with ferromagnets in future devices.

Ir(111) surface state with giant Rashba splitting persists under graphene in air.

Spin currents which allow for a dissipationless transport of information can be generated by electric fields in semiconductor heterostructures in the presence of a Rashbatype spin-orbit coupling. The largest Rashba effects occur for electronic surface states of metals but these cannot exist but under ultrahigh vacuum conditions. Here, we reveal a giant Rashba effect (αR ≈ 1.5 · 10 −10 eVm) on a surface state of Ir(111). We demonstrate that its spin splitting and spin polarization remain unaffected when Ir is covered with graphene. The graphene protection is, in turn, sufficient for the spinsplit surface state to survive in ambient atmosphere. We discuss this result along with evidences for a topological protection of the surface state.

Negligible Surface Reactivity of Topological Insulators Bi2Se3 and Bi2Te3 towards Oxygen and Water

The long-term stability of functional properties of topological insulator materials is crucial for the operation of future topological insulator based devices. Water and oxygen have been reported to be the main sources of surface deterioration by chemical reactions. In the present work, we investigate the behavior of the topological surface states on Bi2X3 (X = Se, Te) by valence-band and core level photoemission in a wide range of water and oxygen pressures both in situ (from 10(-8) to 0.1 mbar) and ex situ (at 1 bar). We find that no chemical reactions occur in pure oxygen and in pure water. Water itself does not chemically react with both Bi2Se3 and Bi2Te3 surfaces and only leads to slight p-doping. In dry air, the oxidation of the Bi2Te3 surface occurs on the time scale of months, in the case of Bi2Se3 surface of cleaved crystal, not even on the time scale of years. The presence of water, however, promotes the oxidation in air, and we suggest the underlying reactions supported by density functional calculations. All in all, the surface reactivity is found to be negligible, which allows expanding the acceptable ranges of conditions for preparation, handling and operation of future Bi2X3-based devices.

Observation of quantum-tunnelling-modulated spin texture in ultrathin topological insulator Bi2Se3 films

Understanding the spin-texture behaviour of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nanodevices. Here, by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunnelling-dependent evolution of spin configuration in topological insulator thin films across the metal-to-insulator transition. We report a systematic binding energy- and wavevector-dependent spin polarization for the topological surface electrons in the ultrathin gapped-Dirac-cone limit. The polarization decreases significantly with enhanced tunnelling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. We present a theoretical model that captures this delicate relationship between quantum tunnelling and Fermi surface spin polarization. Our high-resolution spin-based spectroscopic results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nanodevice.

Strength of correlation effects in the electronic structure of iron.

The strength of electronic correlation effects in the spin-dependent electronic structure of ferromagnetic bcc Fe(110) has been investigated by means of spin and angle-resolved photoemission spectroscopy. The experimental results are compared to theoretical calculations within the three-body scattering approximation and within the dynamical mean-field theory, together with one-step model calculations of the photoemission process. This comparison indicates that the present state of the art many-body calculations, although improving the description of correlation effects in Fe, give too small mass renormalizations and scattering rates thus demanding more refined many-body theories including nonlocal fluctuations.

Focus on the Rashba effect

The Rashba effect, discovered in 1959, continues to supply fertile ground for fundamental research and applications. It provided the basis for the proposal of the spin transistor by Datta and Das in 1990, which has largely inspired the broad and dynamic field of spintronics. More recent developments include new materials for the Rashba effect such as metal surfaces, interfaces and bulk materials. It has also given rise to new phenomena such as spin currents and the spin Hall effect, including its quantized version, which has led to the very active field of topological insulators. The Rashba effect plays a crucial role in yet more exotic fields of physics such as the search for Majorana fermions at semiconductor-superconductor interfaces and the interaction of ultracold atomic Bose and Fermi gases. Advances in our understanding of Rashba-type spin-orbit couplings, both qualitatively and quantitatively, can be obtained in many different ways. This focus issue brings together the wide range of research activities on Rashba physics to further promote the development of our physical pictures and concepts in this field. The present Editorial gives a brief account on the history of the Rashba effect including material that was previously not easily accessible before summarizing the key results of the present focus issue as a guidance to the reader.

Giant Rashba‐Type Spin Splitting in Ferroelectric GeTe(111)

Photoelectron spectroscopy in combination with piezoforce microscopy reveals that the helicity of Rashba bands is coupled to the nonvolatile ferroelectric polarization of GeTe(111). A novel surface Rashba band is found and fingerprints of a bulk Rashba band are identified by comparison with density functional theory calculations.

Probing two topological surface bands of Sb2Te3by spin-polarized photoemission spectroscopy

Using high resolution spin- and angle-resolved photoemission spectroscopy, we map the electronic structure and spin texture of the surface states of the topological insulator Sb2Te3. In combination with density functional calculations (DFT), we directly show that Sb2Te3 exhibits a partially occupied, single spin-Dirac cone around the Fermi energy, which is topologically protected. DFT obtains a spin polarization of the occupied Dirac cone states of 80-90%, which is in reasonable agreement with the experimental data after careful background subtraction. Furthermore, we observe a strongly spin-orbit split surface band at lower energy. This state is found at 0.8eV below the Fermi level at the gamma-point, disperses upwards, and disappears at about 0.4eV below the Fermi level into two different bulk bands. Along the gamma-K direction, the band is located within a spin-orbit gap. According to an argument given by Pendry and Gurman in 1975, such a gap must contain a surface state, if it is located away from the high symmetry points of the Brillouin zone. Thus, the novel spin-split state is protected by symmetry, too.

Photoemission of Bi2Se3 with Circularly Polarized Light: Probe of Spin Polarization or Means for Spin Manipulation?

Topological insulators are characterized by Dirac-cone surface states with electron spins locked perpendicular to their linear momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved photoelectron spectroscopy. We solve this puzzle and show that vacuum ultraviolet photons (50-70 eV) with linear or circular polarization indeed probe the initial-state spin texture of Bi2Se3 while circularly polarized 6-eV low-energy photons flip the electron spins out of plane and reverse their spin polarization, with its sign determined by the light helicity. Our photoemission calculations, taking into account the interplay between the varying probing depth, dipole-selection rules, and spin-dependent scattering effects involving initial and final states, explain these findings and reveal proper conditions for light-induced spin manipulation. Our results pave the way for future applications of topological insulators in optospintronic devices.