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Okumura Yoshinori

Mitsubishi

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Publication

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Archive | 1989

Method of fabricating a trench capacitor cell for a semiconductor memory device

Okumura Yoshinori

Archive | 1988

HALBLEITEREINRICHTUNG MIT GRABENFOERMIGER STRUKTUR

Okumura Yoshinori; Matsukawa Takayuki

Archive | 1989

HALBLEITEREINRICHTUNG MIT EINEM ISOLATIONSOXIDFILM UND HERSTELLUNGSVERFAHREN

Ozaki Hiroji; Yoneda Masahiro; Ogoh Ikuo; Okumura Yoshinori; Wakamiya Wataru; Nagatomo Masao

Archive | 1991

HALBLEITEREINRICHTUNG UND HERSTELLUNGSVERFAHREN FUER DIESE

Motonami Kaoru; Ajika Natsuo; Hachisuka Atsushi; Okumura Yoshinori; Matsui Yasushi

Archive | 1991

Semiconductor device - contains gate electrodes formed on insulation regions between impurity regions

Okumura Yoshinori; Hachisuka Atsushi

Archive | 1995

Halbleitereinrichtung mit einem Wannenbereich für einen MOS-Transistor und Herstellungsverfahren dafür

Okumura Yoshinori; Takeuchi Masahiko; Arima Hideaki

Archive | 1991

Elementisolationsaufbau einer halbleitereinrichtung und verfahren zur herstellung derselben

Nagatomo Masao; Shimano Hiroki; Okudaira Tomonori; Okumura Yoshinori

Archive | 1990

Semiconductor module with laminated coupling layer - has coupling section, extending over insulating film on semiconductor substrate main surface

Okumura Yoshinori; Nagatomo Masao; Ogoh Ikuo; Matsukawa Takayuki; Genjo Hideki; Hachisuka Atsushi

Archive | 1998

Transistor-containing semiconductor device e.g. memory device

Ueno Shuichi; Okumura Yoshinori; Maeda Shingenobu; Maegawa Shigeto

Archive | 1991

HALBLEITEREINRICHTUNG MIT WENIGSTENS ZWEI FELDEFFEKTTRANSISTOREN UND HERSTELLUNGSVERFAHREN FUER DIESE

Okumura Yoshinori

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Ueno Shuichi

Mitsubishi

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Hachisuka Atsushi

Mitsubishi

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Arima Hideaki

Mitsubishi

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Maegawa Shigeto

Mitsubishi

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Maeda Shigenobu

Mitsubishi

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Motonami Kaoru

Mitsubishi

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Okudaira Tomonori

Mitsubishi

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Nagatomo Masao

Mitsubishi

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Ogoh Ikuo

Mitsubishi

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Ajika Natsuo

Mitsubishi

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