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Oliver Hellmund

Infineon Technologies

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Publication

Featured researches published by Oliver Hellmund.

Archive | 2005

Reverse-conduction insulated gate bipolar transistor (IGBT) has semiconductor body that has cell region formed with n-type areas and p-type areas, in which portions between n-type and p-type areas are formed with different minimum distances

Erich Griebl; Oliver Hellmund; Holger Ruething; Armin Willmeroth

Archive | 2011

Method for Producing a Composite Material, Associated Composite Material and Associated Semiconductor Circuit Arrangements

Oliver Hellmund; Daniel Kraft; Friedrich Kroener; Francisco Javier Santos Rodriguez; Carsten von Koblinski

international conference mixed design of integrated circuits and systems | 2010

Energy saving by power electronics in household and automotive applications

Werner Weber; Gerald Deboy; Wolfgang Frank; Oliver Hellmund; Angelika Iberl; Patrick Leteinturier

Archive | 2018

Devices with Backside Metal Structures and Methods of Formation Thereof

Oliver Hellmund; Ingo Muri; Johannes Baumgartl; Iris Moder; Thomas Neidhart; Hans-Joachim Schulze

Archive | 2017

Semiconductor Device and Methods for Forming a Plurality of Semiconductor Devices

Ingo Muri; Oliver Hellmund; Johannes Baumgartl; Iris Moder; Manfred Engelhardt

Archive | 2017

Method of manufacturing a semiconductor device including a supporting member and a semiconductor device including the supporting member

Martina Seider Schmidt; Peter Irsigler; Hans-Joachim Schulze; Oliver Hellmund; Sebastian Schmidt

Archive | 2017

Method of Manufacturing a Semiconductor Device Comprising a Support Element and Semiconductor Device Comprising a Support Element

Oliver Hellmund; Peter Irsigler; Sebastian Schmidt; Hans-Joachim Schulze; Martina Seider-schmidt

Archive | 2017

Substrates with Buried Isolation Layers and Methods of Formation Thereof

Iris Moder; Ingo Muri; Johannes Baumgartl; Oliver Hellmund; Manfred Engelhardt; Hans-Joachim Schulze

Archive | 2017

Methods for Forming a Semiconductor Device and Semiconductor Devices

Oliver Hellmund; Peter Irsigler; Sebastian Schmidt; Hans-Joachim Schulze; Martina Seider-schmidt

Archive | 2017

Verfahren zum verarbeiten eines substrats und elektronische vorrichtung A method for processing a substrate and electronic device

Martin Mischitz; Markus Heinrici; Oliver Hellmund; Peter Irsigler; Friedrich Kroener; Michael Roesner; Manfred Schneegans; Caterina Travan

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Peter Irsigler

Infineon Technologies

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Friedrich Kroener

Infineon Technologies

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Hans-Joachim Schulze

Infineon Technologies

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Carsten von Koblinski

Infineon Technologies

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Daniel Kraft

Infineon Technologies

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Johannes Baumgartl

Infineon Technologies

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Manfred Schneegans

Infineon Technologies

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Markus Heinrici

Carl Zeiss AG

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Martin Mischitz

Carl Zeiss AG

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Michael Roesner

Infineon Technologies

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