Olle Heinonen

Blowing magnetic skyrmion bubbles

Skyrmions emerge in trilayers Skyrmions are tiny whirlpools of magnetic spin with potential to act as carriers of information in future devices. Skyrmions have been observed in multiple materials but usually at impractically low temperatures. Jiang et al. used a constriction in a trilayer system to create skyrmions at room temperature (see the Perspective by von Bergmann). The authors pushed elongated magnetic domains through the constriction using an in-plane current, causing individual skyrmion bubbles to form. Science, this issue p. 283; see also p. 234 In-plane current is used to push stripe-shaped magnetic domains through a constriction, creating skyrmions on the other side. [Also see Perspective by von Bergmann] The formation of soap bubbles from thin films is accompanied by topological transitions. Here we show how a magnetic topological structure, a skyrmion bubble, can be generated in a solid-state system in a similar manner. Using an inhomogeneous in-plane current in a system with broken inversion symmetry, we experimentally “blow” magnetic skyrmion bubbles from a geometrical constriction. The presence of a spatially divergent spin-orbit torque gives rise to instabilities of the magnetic domain structures that are reminiscent of Rayleigh-Plateau instabilities in fluid flows. We determine a phase diagram for skyrmion formation and reveal the efficient manipulation of these dynamically created skyrmions, including depinning and motion. The demonstrated current-driven transformation from stripe domains to magnetic skyrmion bubbles could lead to progress in skyrmion-based spintronics.

Recording on Bit-Patterned Media at Densities of 1 Tb/in

We present a comprehensive analysis of the areal density potential of a bit-patterned media recording. The recording performance is dominated by written-in errors rather than traditional signal-to-noise considerations. Written-in errors are caused by statistical fluctuations of the magnetic properties and the locations of the individual dots. The highest areal densities are obtained with a combination of a pole head, a soft magnetic underlayer, and a storage medium of the composite type. Areal density scenarios of up to 5 Tb/in2 are analyzedRecording on bit-patterned media, BPM, is one way to postpone the superparamagnetic limit to higher densities. Here we investigate the recording potential of BPM. The fundamental idea of bit-patterned media is that one grain represents one bit so that the entire volume of the bit resists the effect of thermal agitation and higher recording density can be achieved. Previous investigations of a BPM recording system have shown that recording densities greater than 1 Tb/in2 should be possible [2].

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A comprehensive analysis of the areal density potential of bit-patterned media recording shows that the recording performance is dominated by written-in errors. The statistical fluctuations of the magnetic properties and the locations of the individual bits lead to error probabilities so that some dots are either not recorded at all or cannot be recorded in the time window necessary to ensure synchronized writing. The highest areal densities are obtained with a combination of a pole head, a soft magnetic underlayer, and a storage medium of the composite type. Areal density scenarios of up to 5Tbits∕in.2 are analyzed.

and Beyond

Experiments show that when driven by electric currents, magnetic skyrmions experience transverse motion due to their topological charge — similar to the conventional Hall effect experienced by charged particles in a perpendicular magnetic field.

Recording potential of bit-patterned media

First-principles calculations of the atomic and electronic structure of crystalline CoFeB∕MgO∕CoFeB magnetic tunnel junctions (MTJs) are performed to understand the effect of B on spin-dependent transport in these junctions. The authors find that it is energetically favorable for B atoms to reside at the crystalline CoFeB∕MgO interface rather than remain in the bulk of the crystalline CoFeB electrode. The presence of B at the interfaces is detrimental to tunneling magnetoresistance (TMR) because it significantly suppresses the majority-channel conductance through states of Δ1 symmetry. Preventing B segregation to the interfaces during annealing should result in an enhanced TMR in CoFeB∕MgO∕CoFeB MTJs.

Direct observation of the skyrmion Hall effect

It has been argued that if multiple spin wave modes are competing for the same centrally located energy source, as in a nanocontact spin torque oscillator, that only one mode should survive in the steady state. Here, the experimental conditions necessary for mode coexistence are explored. Mode coexistence is facilitated by the local field asymmetries induced by the spatially inhomogeneous Oersted field, which leads to a physical separation of the modes, and is further promoted by spin wave localization at reduced applied field angles. Finally, both simulation and experiment reveal a low frequency signal consistent with the intermodulation of two coexistent modes.

Atomic and electronic structure of the CoFeB∕MgO interface from first principles

The creation of large magnetic fields is a necessary component in many technologies, ranging from magnetic resonance imaging, electric motors and generators, and magnetic hard disk drives in information storage. This is typically done by inserting a ferromagnetic pole piece with a large magnetisation density MS in a solenoid. In addition to large MS, it is usually required or desired that the ferromagnet is magnetically soft and has a Curie temperature well above the operating temperature of the device. A variety of ferromagnetic materials are currently in use, ranging from FeCo alloys in, for example, hard disk drives, to rare earth metals operating at cryogenic temperatures in superconducting solenoids. These latter can exceed the limit on MS for transition metal alloys given by the Slater-Pauling curve. This article reviews different materials and concepts in use or proposed for technological applications that require a large MS, with an emphasis on nanoscale material systems, such as thin and ultra-thin films. Attention is also paid to other requirements or properties, such as the Curie temperature and magnetic softness. In a final summary, we evaluate the actual applicability of the discussed materials for use as pole tips in electromagnets, in particular, in nanoscale magnetic hard disk drive read-write heads; the technological advancement of the latter has been a very strong driving force in the development of the field of nanomagnetism.

Spin wave mode coexistence on the nanoscale: a consequence of the Oersted field-induced asymmetric energy landscape

We have investigated high-quality MgO tunnel junctions with a range of barrier thickness in order to identify the underlying physical mechanism responsible for dielectric breakdown. Two types of dielectric breakdown (“soft” and “hard”) were observed. Soft breakdown was observed in a few percent of the devices. This breakdown mode is not intrinsic and is attributed to tunnel junction imperfections. The hard breakdown occurs because a critical electric field is reached across the tunnel barrier. Other possible breakdown mechanisms, such as thermally driven mass diffusion or charge trapping, were not consistent with the hard dielectric breakdown data and were ruled out.

A review of high magnetic moment thin films for microscale and nanotechnology applications

We have measured the bias voltage and field dependence of eigenmode frequencies in a magnetic tunnel junction with MgO barrier. We show that both free layer (FL) and reference layer (RL) modes are excited, and that a crossover between these modes is observed by varying external field and bias voltage. The bias voltage dependence of the FL and RL modes are shown to be dramatically different. The bias dependence of the FL modes is linear in bias voltage, whereas that of the RL mode is strongly quadratic. Using modeling and micromagnetic simulations, we show that the linear bias dependence of FL frequencies is primarily due to a linear dependence of the perpendicular spin torque on bias voltage, whereas the quadratic dependence of the RL on bias voltage is dominated by the reduction of exchange bias due to Joule heating, and is not attributable to a quadratic dependence of the perpendicular spin torque on bias voltage.

Dielectric breakdown of MgO magnetic tunnel junctions

We discuss the coherence of magnetic oscillations in a magnetic tunnel junction based spin torque oscillator as a function of the external field angle. Time-frequency analysis shows mode hopping between distinct oscillator modes, which arises from linear and nonlinear couplings in the Landau-Lifshitz-Gilbert equation, analogous to mode hopping observed in semiconductor ring lasers. These couplings and, therefore, mode hopping are minimized near the current threshold for the antiparallel alignment of free-layer with reference layer magnetization. Away from the antiparallel alignment, mode hopping limits oscillator coherence.