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Dive into the research topics where Olli H. Pakarinen is active.

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Featured researches published by Olli H. Pakarinen.


Modelling and Simulation in Materials Science and Engineering | 2005

Towards an accurate description of the capillary force in nanoparticle-surface interactions

Olli H. Pakarinen; Adam S. Foster; Matti Paajanen; T. Kalinainen; J. Katainen; Ilja Makkonen; Jouko Lahtinen; Risto M. Nieminen

We present a method to numerically calculate the exact (non-circular) meniscus profile from the Kelvin equation, and compare the results of the obtained capillary force with different previous approximations and experiments. We show that a circular meniscus profile gives correct results in most cases. We also compare different models of pull-off behaviour and show that the often used approximation of humidity independent capillary force is viable for spherical particles above 1 µm radius, but below that there is a strong humidity dependence, as seen in experiments. At the same length scale the direct surface tension force component becomes important. We also discuss the vanishing of the capillary force at very low humidity, the effect of small initial separation between the particle and the surface and the effects of different particle shapes and contact angles on the capillary force. Finally, calculated results are compared with experimental measurements of the capillary force. (Some figures in this article are in colour only in the electronic version)


Nature Communications | 2015

Ionization-induced annealing of pre-existing defects in silicon carbide

Yanwen Zhang; Ritesh Sachan; Olli H. Pakarinen; Matthew F. Chisholm; Peng Liu; Haizhou Xue; William J. Weber

A long-standing objective in materials research is to effectively heal fabrication defects or to remove pre-existing or environmentally induced damage in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power and high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization can effectively anneal pre-existing defects and restore the structural order. The threshold determined for this recovery process reveals that it can be activated by 750 and 850 keV Si and C self-ions, respectively. The results conveyed here can contribute to SiC-based device fabrication by providing a room-temperature approach to repair atomic lattice structures, and to SiC performance prediction as either a functional material for device applications or a structural material for high-radiation environments.


Scientific Reports | 2015

Synergy of elastic and inelastic energy loss on ion track formation in SrTiO3

William J. Weber; Eva Zarkadoula; Olli H. Pakarinen; Ritesh Sachan; Matthew F. Chisholm; Peng Liu; Haizhou Xue; Ke Jin; Yanwen Zhang

While the interaction of energetic ions with solids is well known to result in inelastic energy loss to electrons and elastic energy loss to atomic nuclei in the solid, the coupled effects of these energy losses on defect production, nanostructure evolution and phase transformations in ionic and covalently bonded materials are complex and not well understood due to dependencies on electron-electron scattering processes, electron-phonon coupling, localized electronic excitations, diffusivity of charged defects, and solid-state radiolysis. Here we show that a colossal synergy occurs between inelastic energy loss and pre-existing atomic defects created by elastic energy loss in single crystal strontium titanate (SrTiO3), resulting in the formation of nanometer-sized amorphous tracks, but only in the narrow region with pre-existing defects. These defects locally decrease the electronic and atomic thermal conductivities and increase electron-phonon coupling, which locally increase the intensity of the thermal spike for each ion. This work identifies a major gap in understanding on the role of defects in electronic energy dissipation and electron-phonon coupling; it also provides insights for creating novel interfaces and nanostructures to functionalize thin film structures, including tunable electronic, ionic, magnetic and optical properties.


Journal of Physics: Condensed Matter | 2013

SAXS investigations of the morphology of swift heavy ion tracks in α-quartz

Boshra Afra; Matias Rodriguez; C. Trautmann; Olli H. Pakarinen; Flyura Djurabekova; K. Nordlund; Thomas Bierschenk; Raquel Giulian; Mark C Ridgway; Giancarlo Rizza; Nigel Kirby; M. Toulemonde; Patrick Kluth

The morphology of swift heavy ion tracks in crystalline α-quartz was investigated using small angle x-ray scattering (SAXS), molecular dynamics (MD) simulations and transmission electron microscopy. Tracks were generated by irradiation with heavy ions with energies between 27 MeV and 2.2 GeV. The analysis of the SAXS data indicates a density change of the tracks of ~2 ± 1% compared to the surrounding quartz matrix for all irradiation conditions. The track radii only show a weak dependence on the electronic energy loss at values above 17 keV nm(-1), in contrast to values previously reported from Rutherford backscattering spectrometry measurements and expectations from the inelastic thermal spike model. The MD simulations are in good agreement at low energy losses, yet predict larger radii than SAXS at high ion energies. The observed discrepancies are discussed with respect to the formation of a defective halo around an amorphous track core, the existence of high stresses and/or the possible presence of a boiling phase in quartz predicted by the inelastic thermal spike model.


Journal of Physics D | 2012

Cooperative effect of electronic and nuclear stopping on ion irradiation damage in silica

Marie Backman; Flyura Djurabekova; Olli H. Pakarinen; K. Nordlund; Yanwen Zhang; M. Toulemonde; William J. Weber

Radiation damage by ions is conventionally believed to be produced either by displacement cascades or electronic energy deposition acting separately. There is, however, a range of ion energies where both processes are significant and can contribute to irradiation damage. The combination of two computational methods, namely binary collision approximation and molecular dynamics, the latter with input from the inelastic thermal spike model, makes it possible to examine the simultaneous contribution of both energy deposition mechanisms on the structural damage in the irradiated structure. We study the effect in amorphous SiO2 irradiated by Au ions with energies ranging between 0.6 and 76.5 MeV. We find that in the intermediate energy regime, the local heating due to electronic excitations gives a significant contribution to the displacement cascade damage.


Applied Physics Letters | 2008

The so-called dry laser cleaning governed by humidity at the nanometer scale

D. Grojo; Ph. Delaporte; Marc Sentis; Olli H. Pakarinen; Adam S. Foster

Illumination with single nanosecond pulses leads to the detachment of silica particles with 250nm radii from silicon surfaces. We identify two laser-energy dependent cleaning regimes by time-of-flight particle-scattering diagnostics. For the higher energies, the ejection of particles is produced by nanoscale ablation due to the laser field enhancement at the particle-surface interface. The damage-free regime at lower energy is shown to be governed by the residual water molecules, which are inevitably trapped on the materials. We discuss the great importance that the humidity plays on the cleaning force and on the adhesion in the experiments.


Journal of Applied Physics | 2011

Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2

Patrick Kluth; Olli H. Pakarinen; Flyura Djurabekova; Raquel Giulian; Mark C Ridgway; Aidan Byrne; K. Nordlund

We report on the observation of nanoscale density fluctuations in 2 μm thick amorphous SiO2 layers irradiated with 185 MeV Au ions. At high fluences, in excess of approximately 5 × 1012 ions/cm2, where the surface is completely covered by ion tracks, synchrotron small angle x-ray scattering measurements reveal the existence of a steady state of density fluctuations. In agreement with molecular dynamics simulations, this steady state is consistent with an ion track “annihilation” process, where high-density regions generated in the periphery of new tracks fill in low-density regions located at the center of existing tracks.


Materials research letters | 2014

Swift Heavy Ion Shape Transformation of Au Nanocrystals Mediated by Molten Material Flow and Recrystallization

Aleksi A. Leino; Olli H. Pakarinen; Flyura Djurabekova; K. Nordlund; Patrick Kluth; Mark C Ridgway

Swift heavy ion (SHI) irradiation of amorphous SiO2 that contains metal nanocrystals can be used to transform the shape of the particles into peculiar asymmetric ones not easily achievable by other means. Using a molecular dynamics simulation framework augmented to include the electronic excitations of the SHIs, we predict that the reshaping of spherical particles into nanorods occurs continuously during consecutive ion impacts by a dynamic crystal–liquid–crystal phase transition of metal particle with the flow of liquid phase into an underdense track core in silica. The simulated nanocrystals are shown to have a saturation width that agrees with experiments.


Journal of Applied Crystallography | 2013

Temperature dependence of ion track formation in quartz and apatite

Daniel Schauries; Meidong Lang; Olli H. Pakarinen; S. Botis; Boshra Afra; Matias Rodriguez; Flyura Djurabekova; K. Nordlund; Daniel Severin; Markus Bender; Weixing Li; C. Trautmann; Rodney C. Ewing; Nigel Kirby; Patrick Kluth

Ion tracks were created in natural quartz and fluorapatite from Durango, Mexico, by irradiation with 2.2 GeV Au ions at elevated temperatures of up to 913 K. The track radii were analysed using small-angle X-ray scattering, revealing an increase in the ion track radius of approximately 0.1 nm per 100 K increase in irradiation temperature. Molecular dynamics simulations and thermal spike calculations are in good agreement with these values and indicate that the increase in track radii at elevated irradiation temperatures is due to a lower energy required to reach melting of the material. The post-irradiation annealing behaviour studied for apatite remained unchanged.


Scientific Reports | 2015

Fast ion conductivity in strained defect-fluorite structure created by ion tracks in Gd2Ti2O7

Dilpuneet S. Aidhy; Ritesh Sachan; Eva Zarkadoula; Olli H. Pakarinen; Matthew F. Chisholm; Yanwen Zhang; William J. Weber

The structure and ion-conducting properties of the defect-fluorite ring structure formed around amorphous ion-tracks by swift heavy ion irradiation of Gd2Ti2O7 pyrochlore are investigated. High angle annular dark field imaging complemented with ion-track molecular dynamics simulations show that the atoms in the ring structure are disordered, and have relatively larger cation-cation interspacing than in the bulk pyrochlore, illustrating the presence of tensile strain in the ring region. Density functional theory calculations show that the non-equilibrium defect-fluorite structure can be stabilized by tensile strain. The pyrochlore to defect-fluorite structure transformation in the ring region is predicted to be induced by recrystallization during a melt-quench process and stabilized by tensile strain. Static pair-potential calculations show that planar tensile strain lowers oxygen vacancy migration barriers in pyrochlores, in agreement with recent studies on fluorite and perovskite materials. In view of these results, it is suggested that strain engineering could be simultaneously used to stabilize the defect-fluorite structure and gain control over its high ion-conducting properties.

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Flyura Djurabekova

Helsinki Institute of Physics

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K. Nordlund

University of Helsinki

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Mark C Ridgway

Australian National University

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Patrick Kluth

Australian National University

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Raquel Giulian

Australian National University

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Yanwen Zhang

Oak Ridge National Laboratory

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Aidan Byrne

Australian National University

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