Olufemi I. Dosunmu

Demonstration of a High Speed 4-Channel Integrated Silicon Photonics WDM Link with Hybrid Silicon Lasers

The demonstration of a 4λ×10Gbps Silicon Photonics CWDM link integrating all optical components, electronics and packaging technologies required for system integration is reported. Further demonstration of the link operating at 50Gbps, 4λ×12.5Gbps, is also shown.

25 Gb/s transmission over 820 m of MMF using a multimode launch from an integrated silicon photonics transceiver

A new high bandwidth bend-insensitive MMF optimized for 1310 nm is designed and characterized. 25 Gb/s transmission over a record 820 m length using a multimode launch from an integrated SiPh transceiver at 1310 nm through the new fiber is demonstrated with a power penalty of 3.4 dB at 10(-12) BER. Detailed characteristics of the fiber and transceiver are presented along with BER measurements.

Integrated silicon photonics for optical networks [Invited]

Feature Issue on Nanoscale Integrated Photonics for Optical Networks Fiber optic communication is well established today in long-haul, metro, and some data communication segments. Optical technologies continue to penetrate more into the network owing to the increase in bandwidth demands; however, they still suffer from too expensive solutions. Silicon photonics is a new technology developing integrated photonic devices and circuits based on the unique silicon material that has already revolutionized the face of our planet through the microelectronics industry. This paper reviews silicon photonics technology at Intel, showing how using the same mature, low-cost silicon CMOS technology we develop many of the building blocks required in current and future optical networks. After introducing the silicon photonics motivation for networks, we discuss the various devices--waveguides, modulators, Raman amplifiers and lasers, photodetectors, optical interconnects, and photonic crystals--from the points of view of applications, principle of operation, process development, and performance results.

300m transmission over multimode fiber at 25Gb/s using a multimode launch at 1310nm

We demonstrate the transmission of 25Gb/s multimode optical signals over a record length of 300m multimode fiber designed for high modal bandwidth at 1310nm. The power penalty is 1.8 dB at 10(-12) bit error rate level.

State of the art Si-based receiver solutions for short reach applications

We report on the recent progress in Ge/Si receivers which are becoming competitive in performance with their III-V counterparts. In particular, we will focus on pin and avalanche photodetector-based receiver results at 1310 nm.

Progress toward competitive Ge/Si photodetectors

Research and development on silicon-based optoelectronic devices is increasing as the need for integrated optical devices is becoming more apparent. One component which has seen rapid performance improvement over the last five years has been a Ge-on-Si photodetector which can operate between 850 and 1600 nm with high quantum efficiencies and bandwidths. We have reported on three types of these detectors; normal incident illuminated p-i-n detectors, waveguide p-i-n detectors, and avalanche photodetectors (APDs). The former has achieved -14.5 dBm sensitivity at 10 Gb/s and 850 nm, which is comparable to similarly commercially packaged GaAs devices. Waveguide photodetectors have achieved bandwidths of approximately 30 GHz at 1550 nm with internal quantum efficiencies of 90%. Normal incident avalanche photodetectors operating at 1310 nm have achieved a primary responsivity of 0.54 A/W with a 3-dB bandwidth of 9GHz at a gain of 17.