Olumide Oluwole Akinwunmi

Preparation and characterization of MOCVD thin films of indium tin oxide

Abstract Indium Tin Oxide (ITO) was deposited by pyrolysis of mixed metal acetylacetonate (a single solid-source precursor). This study demonstrates that the properties of the as-deposited film depend on the deposition temperature. Films with a resistivity of 7.2×10 −4 Ω cm , a visible transmission of over 80%, and a direct optical energy gap of 3.76 eV were deposited.

Synthesis and Some Properties of Metal Organic Chemical Vapour Deposited Molybdenum Oxysulphide Thin Films

of oxygen. The large amount of oxygen was attributed to the large abundance of oxygen in the starting material. A direct optical energy gap of 3.31 eV was obtained from the analysis of the absorption spectrum. The scanning electron microscopy (SEM) micrographs of the fllms showed that the fllms were continuous and porous. An estimated average size of the grains was below 5 „m. X-ray difiraction (XRD) showed that the deposited fllms were crystalline in nature.