Omveer Singh
Indian Institute of Technology Delhi
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Omveer Singh.
ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2015): 4th National Conference on Advanced Materials and Radiation Physics | 2015
Omveer Singh; Raj P. Dahiya; Hitendra K. Malik; Parmod Kumar
In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H2 and N2 gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.
INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015): Proceeding of International Conference on Condensed Matter and Applied Physics | 2016
Omveer Singh; Raj P. Dahiya; Hitendra K. Malik
In the present work, nitrogen ions are embedded into Ti thin films (200 nm) using low energy ion beam implantation (70 keV) by varying ions fluence from 4×1015 ions/cm2 to 2×1016 ions/cm2. For this, Ti films were grown using DC magnetron sputtering in Ar environment (power 200 W). TiN films were then characterized using versatile techniques for estimating the band gap and electrical resistivity. X-ray diffraction pattern shows shift in peaks towards higher angle with increase in nitrogen fluence that confirms the introduction of strain in Ti films. UV-Vis spectra show that band gap is reduced from 3.75 eV to 1.7 eV with increase in fluence from 4×1015 ions/cm2 to 2×1016 ions/cm2. Furthermore, electrical resistivity also decreases from 2.67×10−4 Ω.cm to 2.31×10−4 Ωcm with nitrogen ion fluence. Based on these results, it can be inferred that ion implantation is an effective approach for uniform distribution of N ions in host matrix and tuning of optical and electrical properties.
ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2015): 4th National Conference on Advanced Materials and Radiation Physics | 2015
Hitendra K. Malik; Omveer Singh; Raj P. Dahiya
We have established a hot cathode arc discharge plasma system, where different stainless steel samples can be treated by monitoring the plasma parameters and nitriding parameters independently. In the present work, a mixture of 70% N2 and 30% H2 gases was fed into the plasma chamber and the treatment time and substrate temperature were optimized for treating 304L Stainless Steel samples. Various physical techniques such as x-ray diffraction, energy dispersive x-ray spectroscopy and micro-vickers hardness tester were employed to determine the structural, surface composition and surface hardness of the treated samples.
Archive | 2016
Omveer Singh; Raj P. Dahiya; Hitendra K. Malik; Parmod Kumar; Vinay Kumar Singh
international conference on nanotechnology | 2016
Omveer Singh; Raj P. Dahiya; Hitendra K. Malik
Materials Research Express | 2017
Omveer Singh; Hitendra K. Malik; Raj P. Dahiya; Parmod Kumar
Journal of Alloys and Compounds | 2017
Omveer Singh; Hitendra K. Malik; Raj P. Dahiya; P.K. Kulriya
Ceramics International | 2016
Omveer Singh; Hitendra K. Malik; Raj P. Dahiya; Parmod Kumar
Bulletin of the American Physical Society | 2015
Omveer Singh; Raj P. Dahiya; Hitendra K. Malik
Bulletin of the American Physical Society | 2012
Hitendra K. Malik; Omveer Singh; Raj P. Dahiya