Onoda Hiroshi

Monte Carlo investigations of the ion microprobe

Abstract A Monte Carlo program which simulates the scattering of energetic ions and recoil atoms in amorphous targets is presented. An analytical formula constructed Biersack and Haggmark to evaluate the scattering angle, and the universal interatomic potential of Ziegler are used. The theoretical predictions obtained using our program for some exposure characteristics of PMMA to 200 keV Be and Si ion beams, including the effects of recoil atoms, are shown to agree with experimental results. Our simulation program was applied in a study of the effect of damage produced in GaAs by Si ion exposure, in order to evaluate the degradation of the electrical characteristics of GaAs FETs fabricated by the use of a focused ion beam (FIB) technique.