Ophir Gaathon

Coherent spin control of a nanocavity-enhanced qubit in diamond

A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Among solid-state systems, the nitrogen-vacancy centre in diamond has emerged as an excellent optically addressable memory with second-scale electron spin coherence times. Recently, quantum entanglement and teleportation have been shown between two nitrogen-vacancy memories, but scaling to larger networks requires more efficient spin-photon interfaces such as optical resonators. Here we report such nitrogen-vacancy-nanocavity systems in the strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 μs using a silicon hard-mask fabrication process. This spin-photon interface is integrated with on-chip microwave striplines for coherent spin control, providing an efficient quantum memory for quantum networks.

Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 106) photonic crystal cavities with low mode volume (Vm = 1.062 × (λ/n)3), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 103.

Scalable Fabrication of High Purity Diamond Nanocrystals with Long-Spin-Coherence Nitrogen Vacancy Centers

The combination of long spin coherence time and nanoscale size has made nitrogen vacancy (NV) centers in nanodiamonds the subject of much interest for quantum information and sensing applications. However, currently available high-pressure high-temperature (HPHT) nanodiamonds have a high concentration of paramagnetic impurities that limit their spin coherence time to the order of microseconds, less than 1% of that observed in bulk diamond. In this work, we use a porous metal mask and a reactive ion etching process to fabricate nanocrystals from high-purity chemical vapor deposition (CVD) diamond. We show that NV centers in these CVD nanodiamonds exhibit record-long spin coherence times in excess of 200 μs, enabling magnetic field sensitivities of 290 nT Hz(-1/2) with the spatial resolution characteristic of a 50 nm diameter probe.

Long-lived NV− spin coherence in high-purity diamond membranes

The electronic spin associated with the nitrogen vacancy (NV) color center in diamond is an excellent candidate for a solid-state qubit functioning as a quantum register or sensor. However, the lack of thin film technologies for crystalline diamond with low impurity levels hampers the development of photonic interfaces to such diamond-based qubits. We present a method for manufacturing slabs of diamond of 200 nm thickness and several microns in extent from high-purity single crystal chemical vapor deposition diamond. We measure spin coherence times approaching 100 μs and observe increased photoluminescence collection from shallow implant NV centers in these slabs. We anticipate these slabs to be appealing as quantum memory nodes in hybrid diamond nanophotonic systems.

Surface Structure of Aerobically Oxidized Diamond Nanocrystals.

We investigate the aerobic oxidation of high-pressure, high-temperature nanodiamonds (5–50 nm dimensions) using a combination of carbon and oxygen K-edge X-ray absorption, wavelength-dependent X-ray photoelectron, and vibrational spectroscopies. Oxidation at 575 °C for 2 h eliminates graphitic carbon contamination (>98%) and produces nanocrystals with hydroxyl functionalized surfaces as well as a minor component (<5%) of carboxylic anhydrides. The low graphitic carbon content and the high crystallinity of HPHT are evident from Raman spectra acquired using visible wavelength excitation (λexcit = 633 nm) as well as carbon K-edge X-ray absorption spectra where the signature of a core–hole exciton is observed. Both spectroscopic features are similar to those of chemical vapor deposited (CVD) diamond but differ significantly from the spectra of detonation nanodiamond. The importance of these findings to the functionalization of nanodiamond surfaces for biological labeling applications is discussed.

A micro-Raman spectroscopic investigation of He + -irradiation damage in LiNbO 3

Imaging micro-Raman spectroscopy is used to investigate the materials physics of radiation damage in congruent LiNbO3 as a result of high-energy (~MeV) He+ irradiation. This study uses a scanning confocal microscope for high-resolution three-dimensional micro-Raman imaging along with reflection optical microscopy (OM), and scanning electron microscopy (SEM). The tight optical excitation beam in the Raman system allows spatial mapping of the Raman spectra both laterally and normal to the irradiation axis with ≤1 μm resolution. Point defects and compositional changes after irradiation and surface deformation including blistering and microstress are observed in the stopping region. We demonstrate that the probed area of the damaged region is effectively “expanded” by a beveled geometry, formed through off-angle polishing of a crystal facet; this technique enables higher-resolution probing of the ion-induced changes in the Raman spectra and imaging of dislocation line defects that are otherwise inaccessible by conventional probing (depth and edge scan). Two-dimensional (2D) Raman imaging is also used to determine the defect uniformity across an irradiated sample and to examine the damage on a sample with patterned implantation. The effects of different He+ doses and energies, together with post-irradiation treatments such as annealing, are also discussed.

Origin of highly spatially selective etching in deeply implanted complex oxides

The origin of the rate of anomalously high spatially selective etching of a buried heavily implanted region in complex oxides is studied. Single-crystal LiNbO3 samples are prepared with a 0.4μm wide implanted region at depth of 10μm, using 5×1016cm−2 fluence of 3.8MeV He+, and wet etched after a low-temperature anneal. An etch-rate enhancement of 104 is found after implantation and low-temperature 175–275°C post-implantation annealing. Experiments using time-resolved optical microscopy, x-ray diffraction, and proximal-probe microscopy show that this enhancement arises from the more rapid etch-solution transport in the microdomain network formed in the implanted region after annealing.The origin of the rate of anomalously high spatially selective etching of a buried heavily implanted region in complex oxides is studied. Single-crystal LiNbO3 samples are prepared with a 0.4μm wide implanted region at depth of 10μm, using 5×1016cm−2 fluence of 3.8MeV He+, and wet etched after a low-temperature anneal. An etch-rate enhancement of 104 is found after implantation and low-temperature 175–275°C post-implantation annealing. Experiments using time-resolved optical microscopy, x-ray diffraction, and proximal-probe microscopy show that this enhancement arises from the more rapid etch-solution transport in the microdomain network formed in the implanted region after annealing.

Generation of Ensembles of Individually Resolvable Nitrogen Vacancies Using Nanometer-Scale Apertures in Ultrahigh-Aspect Ratio Planar Implantation Masks

A central challenge in developing magnetically coupled quantum registers in diamond is the fabrication of nitrogen vacancy (NV) centers with localization below ∼20 nm to enable fast dipolar interaction compared to the NV decoherence rate. Here, we demonstrate the targeted, high throughput formation of NV centers using masks with a thickness of 270 nm and feature sizes down to ∼1 nm. Super-resolution imaging resolves NVs with a full-width maximum distribution of 26 ± 7 nm and a distribution of NV-NV separations of 16 ± 5 nm.

Large-area regular nanodomain patterning in He-irradiated lithium niobate crystals

Large-area ferroelectric nanodomain patterns, which are desirable for nonlinear optical applications, were generated in previously He-implanted lithium niobate crystals by applying voltage pulses to the tip of a scanning force microscope. The individual nanodomains were found to be of uniform size, which depended only on the inter-domain spacing and the pulse amplitude. We explain this behavior by the electrostatic repulsion of poling-induced buried charges between adjacent domains. The domain patterns were imaged by piezoresponse force microscopy and investigated by domain-selective etching in conjunction with focused ion beam etching followed by scanning electron microscopy imaging. In order to optimize the He-irradiation parameters for easy and reliable nanodomain patterning a series of samples subjected to various irradiation fluences and energies was prepared. The different samples were characterized by investigating nanodomains generated with a wide range of pulse parameters (amplitude and duration). In addition, these experiments clarified the physical mechanism behind the facile poling measured in He-irradiated lithium niobate crystals: the damage caused by the energy loss that takes place via electronic excitations appears to act to stabilize the domains, whereas the nuclear-collision damage degrades the crystal quality, and thus impedes reliable nanodomain generation.

Modulation of nitrogen vacancy charge state and fluorescence in nanodiamonds using electrochemical potential

Significance The nitrogen vacancy center (NV) in diamond is a fluorescent color center that can be in several charge states depending on its local electrostatic environment. Here, we demonstrate the control of the charge state and fluorescence of NVs in nanodiamonds (NDs) by applying a potential difference across NDs in an electrochemical cell. Controlling the charge state can improve spin-based sensing protocols of the NV. Conversely, the NV’s strong fluorescence dependence on electrochemical potential differences also enables a new modality for optical sensing of its environment. With this electrochemical setup, we show that a single NV can reveal a 100-mV potential swing, whereas multiple NVs allow for the detection of potential swings as small as 20 mV. The negatively charged nitrogen vacancy (NV−) center in diamond has attracted strong interest for a wide range of sensing and quantum information processing applications. To this end, recent work has focused on controlling the NV charge state, whose stability strongly depends on its electrostatic environment. Here, we demonstrate that the charge state and fluorescence dynamics of single NV centers in nanodiamonds with different surface terminations can be controlled by an externally applied potential difference in an electrochemical cell. The voltage dependence of the NV charge state can be used to stabilize the NV− state for spin-based sensing protocols and provides a method of charge state-dependent fluorescence sensing of electrochemical potentials. We detect clear NV fluorescence modulation for voltage changes down to 100 mV, with a single NV and down to 20 mV with multiple NV centers in a wide-field imaging mode. These results suggest that NV centers in nanodiamonds could enable parallel optical detection of biologically relevant electrochemical potentials.