Oswald Spindler
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Publication
Featured researches published by Oswald Spindler.
Seventh International IEEE Conference on VLSI Multilevel Interconnection | 1990
K.-D. Menz; Rainer Braun; W. Henkel; R. Huber; Bernhard Neureither; Oswald Spindler; Helmuth Treichel
A new low-stress oxide/nitride sandwich passivation using layers of plasma-enhanced chemical vapor deposition (PECVD) TEOS and PECVD Si/sub x/N/sub y/H/sub z/ that achieves high device lifetimes is presented. A nonplanarized low-stress sandwich as well as a planarized one are investigated. The planarization includes deposition and in-situ etching of the TEOS-based PECVD oxide. Scanning electron microscopy (SEM) analysis of narrow metal 2 spaces and via holes show a conformal oxide/nitride deposition and local planarization of the oxide without voids, respectively. In the case of the nonplanarized passivation variation, as compared to the passivation sandwich with high stress, the lifetimes of three different NMOS devices are increased by a factor of 3-4.<<ETX>>
Archive | 1993
Zvonimir Gabric; Alexander Gschwandtner; Oswald Spindler
Archive | 1993
Konrad Hieber; Jasper Von Tomkewitsch; Oswald Spindler; Helmuth Treichel; Zvonimir Gabric; Alexander Gschwandtner
Archive | 1991
Heinz Steinhardt; Oswald Spindler; Hans Raske; Josef Mathuni
Journal De Physique Iv | 1991
Helmuth Treichel; Rainer Braun; Zvonimir Gabric; Oswald Spindler; Alexander Gschwandtner
Archive | 1991
Helmuth Treichel; Oswald Spindler; Rainer Braun; Bernhard Neureither; Thomas Kruck
Archive | 1989
Helmuth Treichel; Oswald Spindler; Bernhard Neureither
Archive | 1990
Helmut Treichel; Oswald Spindler; Rainer Braun; Bernhard Neureither; Thomas Kruck
Archive | 1989
Helmuth Treichel; Dieter Fuchs; Konrad Hieber; Thomas Kruck; Oswald Spindler; Bernhard Neureither
Archive | 1997
Zvonimir Gabric; Oswald Spindler; Thomas Grassl
