Otsuki Tatsuo
Panasonic
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Publication
Featured researches published by Otsuki Tatsuo.
Integrated Ferroelectrics | 1995
Sumi Tatsumi; Moriwaki Nobuyuki; Nakane George; Nakakuma Tetsuji; Judai Yuji; Uemoto Yasuhiro; Nagano Yoshihisa; Hayashi Shinichiro; Azuma Masamichi; Otsuki Tatsuo; Kano Gota; Cuchiaro JosephD.; Scott MichaflC.; McMillan LarryD.; Paz de Araujo CarlosA.
Abstract A 3V 100ns read/write 256kb ferroelectric nonvolatile memory (FeRAM) is achieved with 1T/1C cells, novel reference cell circuits and cell plate circuits. The FeRAM is fabricated in 1.2um CMOS process with single Aluminum interconnection and Bi based layered perovskite ferroelectric material “Y-l” and has no fatigue even after 1012 destructive read and re-write stress cycles.
Archive | 1992
Uemoto Yasuhiro; Fujii Eiji; Shimada Yasuhiro; Nasu Toru; Matsuda Akihiro; Otsuki Tatsuo
Archive | 1994
Otsuki Tatsuo; Fujii Eiji; Nasu Toru; Uemoto Yasuhiro; Shimada Yasuhiro; Matsuda Akihiro
Archive | 1997
Hochido Yuko; Kadokura Hidekimi; Matsumoto Masamichi; Arita Koji; Azuma Masamichi; Otsuki Tatsuo
Archive | 2007
Hayashi Shinichiro; Otsuki Tatsuo
Archive | 2006
Chen Zheng; Kato Yoshihisa; Joshi Vikram; Lim Myoungho; Paz De Araujo Carlos A; Mcmillan Larry D; Shimada Yasuhiro; Otsuki Tatsuo
Archive | 2001
Tanaka Keisuke; Nagano Yoshihisa; Uemoto Yasuhiro; Otsuki Tatsuo
Archive | 1999
Nasu Toru; Inoue Atsuo; Matsuda Akihiro; Otsuki Tatsuo; Kuno Setsuko
Archive | 1997
Hochido Yukoh; Kadokura Hidekimi; Matsumoto Masamichi; Arita Koji; Azuma Masamichi; Otsuki Tatsuo
Archive | 1994
Arita Koji; Fujii Eiji; Shimada Yasuhiro; Uemoto Yasuhiro; Inoue Atsuo; Nasu Toru; Matsuda Akihiro; Nagano Yoshihisa; Matsuura Taketoshi; Otsuki Tatsuo
