Ovidiu Brinza

Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole

A low-dislocation diamond is obtained by homoepitaxial chemical vapor deposition on a standard moderate-quality substrate hollowed out by a large square hole. Dislocations are found to propagate vertically and horizontally from the substrate and to terminate at the top surface or at the sides of the hole, thus leaving the central part with a strongly reduced dislocation density.

Self-propagating high-temperature synthesis of boron subphosphide B12P2

Two new methods to produce nanopowders of B12P2 boron subphosphide by self-propagating high-temperature synthesis have been proposed. Bulk polycrystalline B12P2 with microhardness of HV = 35(3) GPa and stability in air up to 1300 K has been prepared by sintering these powders at 5.2 GPa and 2500 K.

From nanoparticles to bulk crystalline solid: nucleation, growth kinetics and crystallisation of mixed oxide ZrxTi1−xO2 nanoparticles

We describe the preparation of mixed metal oxide nanoparticles of a desirable composition and their transformation to the crystalline solids ZrxTi1−xO2 (0.0 ≤ x ≤ 1.0) after heat treatment. The correlation analysis between the size of the nucleus, the crystalline phase and the elemental composition of the solid is presented. Mixed metal oxide zirconium–titanium-oxo-alkoxy (ZTOA) nanoparticles of different elemental compositions 0 ≤ x = CZr/(CZr + CTi) ≤ 1 were prepared via the sol–gel method in a reactor by rapid micromixing of n-propanol fluids containing the precursors and water. The structural transformation of the nanoparticles takes place in two temperature ranges, 210–250 °C and 380–680 °C, which sensitively depends on the elemental composition. In the range 0.3 ≤ x ≤ 0.6, stable ZTOA nanoparticles with a radius of 2.1 ± 0.05 nm appeared at the hydrolysis ratio H ≤ 1.5. The heat treatment results in a single orthorhombic ZrxTi1−xO2 phase. The crystallisation onset temperature was the highest in this range of x, attaining 680 °C at x = 0.5. In the range 0 ≤ x ≤ 0.2, the particle radius decreased to 1.6 nm for pure titanium-oxo-alkoxy nuclei (TOA, x = 0); their heat treatment resulted in a single TiO2 anatase phase. In the range 0.7 ≤ x ≤ 1, the particle radius decreased to 1.8 nm for pure zirconium-oxo-alkoxy nuclei (ZOA, x = 1); their heat treatment resulted in mixed monoclinic and tetragonal ZrO2 phases. The crystalline cell parameters of the observed phases underwent a continuous variation with x. TEM images evidenced the nanoporous structure of submicronic orthorhombic ZrxTi1−xO2 monocrystals with a mean pore size of about that of the ZTOA nanoparticles.

Elastic moduli and hardness of η-Ta2N3 from nanoindentation measurements

Nanoindentation testing was used to determine elastic moduli and hardness of ?-Ta2N3, a novel stiff and hard high-pressure compound recoverable at ambient conditions. For a sample having porosity of 14% we confirmed densification of its upper layer induced by mechanical polishing: At depths we obtained higher reduced elastic modulus and higher hardness when compared with the sample without the densified layer. Using the experimental values of and of porosity we derived the shear modulus of dense ?-Ta2N3 to be . Hardness of the porous ?-Ta2N3 was measured to be 18 GPa and its fracture toughness estimated to exceed . The Pugh criterion suggests a high malleability of ?-Ta2N3 which could explain the observed surface densification.

Highly photostable NV centre ensembles in CVD diamond produced by using N2O as the doping gas

High density Nitrogen-Vacancy (NV) centre ensembles incorporated in plasma assisted chemical vapour deposition (CVD) diamond are crucial to the development of more efficient sensing devices that use the properties of luminescent defects. Achieving high NV doping with N2 as the dopant gas source during diamond growth is, however, plagued by the formation of macroscopic and point defects that quench luminescence. Moreover, such NVs are found to exhibit poor photostability under high laser powers. Although this effect can be harnessed to locally and durably switch off NV luminescence for data storage, it is usually undesirable for most applications. In this work, the use of N2O as an alternative doping source is proposed. Much higher amounts of the doping gas can be added without significantly generating defects, which allows the incorporation of perfectly photostable and higher density NV ensembles. This effect is believed to be related to the lower dissociation energy of the N2O molecule together with the ...

Alternative solutions to caesium in negative-ion sources: a study of negative-ion surface production on diamond in H2/D2 plasmas

This paper deals with a study of H-/D- negative ion surface production on diamond in low pressure H-2/D-2 plasmas. Asample placed in the plasma is negatively biased with respect to plasma potential. Upon positive ion impacts on the sample, some negative ions are formed and detected according to their mass and energy by a mass spectrometer placed in front of the sample. The experimental methods developed to study negative ion surface production and obtain negative ion energy and angle distribution functions are first presented. Different diamond materials ranging from nanocrystalline to single crystal layers, either doped with boron or intrinsic, are then investigated and compared with graphite. The negative ion yields obtained are presented as a function of different experimental parameters such as the exposure time, the sample bias which determines the positive ion impact energy and the sample surface temperature. It is concluded from these experiments that the electronic properties of diamond materials, among them the negative electron affinity, seem to be favourable for negative-ion surface production. However, the negative ion yield decreases with the plasma induced defect density.

Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate

This work presents the successful CVD heteroepitaxial growth of 3C-SiC on diamond (100) substrates. When performing a direct SiC growth at 1500°C on such substrate, it leads to polycrystalline deposit. The use of a substrate pretreatment involving silicon deposition allows forming a more continuous and smoother layer. Electron BackScatter Diffraction and Transmission Electron Microscopy all revealed that the 3C-SiC layer grown on the (100) diamond substrate is monocrystalline and well oriented.