P. A. Crowell

Electrical detection of spin transport in lateral ferromagnet–semiconductor devices

The development of semiconductor spintronics requires a reliable electronic means for writing, processing and reading information using spin-polarized carriers. Here, we demonstrate a fully electrical scheme for achieving spin injection, transport and detection in a single device. Our device consists of a lateral semiconducting channel with two ferromagnetic contacts, one of which serves as a source of spin-polarized electrons and the other as a detector. Spin detection in the device is achieved through a non-local, spin-sensitive, Schottky-tunnel-barrier contact whose electrochemical potential depends on the relative magnetizations of the source and detector. We verify the effectiveness of this approach by showing that a transverse magnetic field suppresses the non-local signal at the detection contact by inducing spin precession and dephasing in the channel (the Hanle effect). The sign of the signal varies with the injection current and is correlated with the spin polarization in the channel as determined by optical Kerr rotation measurements.

Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and -GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magnetic field, bias current, and temperature is in good agreement with the predictions of a drift-diffusion model for spin-polarized transport.

Spatially resolved dynamics of localized spin-wave modes in ferromagnetic wires

We have observed localized spin-wave modes in individual thin-film ferromagnetic wires using time-resolved Kerr microscopy as a micron-scale spectroscopic probe. The localization is due to the internal field profile present when an external field is applied in the plane of the film and perpendicular to the long axis of the wire. Spatially resolved spectra demonstrate the existence of distinct modes at the edges of a rectangular wire. Spectral images clearly show the crossover of the two edge modes into a single mode in low applied fields, in agreement with the results of micromagnetic simulations.

Spin injection from the Heusler alloy Co2MnGe into Al0.1Ga0.9As∕GaAs heterostructures

Electrical spin injection from the Heusler alloy Co2MnGe into a p-i-nAl0.1Ga0.9As∕GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2MnGe decays more rapidly with increasing temperature.

Spin Injection and Relaxation in Ferromagnet-Semiconductor Heterostructures

We present a detailed description of spin injection and detection in

Interactions of spin waves with a magnetic vortex

\mathrm{Fe}∕{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}∕\mathrm{GaAs}

Near-field scanning optical spectroscopy of an InGaN quantum well

heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three temperature regimes for spin transport and relaxation. At temperatures below 70 K, spin-polarized electrons injected into quantum well structures form excitons, and the spin polarization in the quantum well depends strongly on the electrical bias conditions. At intermediate temperatures, the spin polarization is determined primarily by the spin-relaxation rate for free electrons in the quantum well. This process is slow relative to the excitonic spin-relaxation rate at lower temperatures and is responsible for a broad maximum in the spin polarization between 100 and 200 K. The spin injection efficiency of the

Spin-Based Computing: Device Concepts, Current Status, and a Case Study on a High-Performance Microprocessor

\mathrm{Fe}∕{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}

Dynamics of a pinned magnetic vortex.

Schottky barrier decreases at higher temperatures, although a steady-state spin polarization of at least 6% is observed at 295 K.

Dynamic nuclear polarization by electrical spin injection in ferromagnet-semiconductor heterostructures.

We have investigated azimuthal spin-wave modes in magnetic vortex structures using time-resolved Kerr microscopy. Spatially resolved phase and amplitude spectra of ferromagnetic disks with diameters from 5 microm down to 500 nm reveal that the lowest order azimuthal spin-wave mode splits into a doublet as the disk size decreases. We demonstrate that the splitting is due to the coupling between spin waves and the gyrotropic motion of the vortex core.