P. Arun

Effect of energetic ion irradiation on CdI2 films

The effect of plasma irradiation is studied systematically on a 4H polytype (002) oriented

An accurate formula for the period of a simple pendulum oscillating beyond the small angle regime

{\rm CdI_2}

Influence of grain size on the band-gap of annealed SnS thin films

stoichiometric film having compressive residual stress. Plasma irradiation was found to change the orientation to (110) of the film at certain moderate irradiation distances. A linear decrease in grain size and residual stress was observed with decreasing irradiation distance (or increasing ion energy) consistent with both structural and morphological observations. The direct optical energy gap

Laser-induced crystallization in amorphous films of (C = S, Se, Te), potential optical storage media

{\rm E_g}

Effect of argon ion irradiation on Sb2Te3 films in a dense plasma focus device

was found to increase linearly at the rate

Phase modification by instantaneous heat treatment of Sb2S3 films and their potential for photothermal optical recording

{\rm 15\mu eV/atm}

Potential of Sb2Se3 films for photo-thermal phase change optical storage

with the compressive stress. The combined data of present compressive stress and from earlier reported tensile stress show a consistent trend of

Parameters influencing the optical properties of SnS thin films

{\rm E_g}

LASER-INDUCED CRYSTALLIZATION IN Sb2S3 FILMS

change with stress. The iodine-iodine distance in the unit cell could be responsible for the observed change in

Ageing effect of Sb2Te3 thin films

{\rm E_g}