P. Ghekiere

Biaxially Aligned Yttria Stabilized Zirconia and Titanium Nitride Layers Deposited by Unbalanced Magnetron Sputtering

Control of the texture and the biaxial alignment of sputter deposited films has provoked a great deal of interest due to its technological importance. Indeed, many physical properties of thin films are influenced by the biaxial alignment. In this context, extensive research has been established to understand the growth mechanism of biaxially aligned Yttria Stabilized Zirconia (YSZ) as a buffer layer for high temperature superconducting copper oxides. In this work, the growth mechanism in general and the mechanism responsible of the biaxial alignment in detail were investigated for thin films of YSZ and TiN deposited by unbalanced magnetron sputtering using non-aligned polycrystalline stainless steel substrates. The mechanism responsible for the preferential out-of-plane alignment has been investigated by performing depositions on a non-tilted substrate. However, to study the in-plane alignment a tilted substrate was used. The microstructure of the deposited layers was characterised by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The crystallographic alignment has been investigated by X-ray diffraction (XRD) (angular scans and pole figures) and by Selective Area Diffraction (SAD). It was observed that the deposited layers show a zone T or zone II structure and the layers with a zone T structure consist of faceted grains. There seems to be a correlation between the crystal habit of these faceted grains and the measured biaxial alignment. A model for the preferential out-ofplane orientation, the in-plane alignment and the correlation between the microstructure and the biaxial alignment is proposed.

Growth mechanism of biaxially aligned magnesium oxide deposited by unbalanced magnetron sputtering

For many years magnesium oxide (MgO) has been a topic of research as buffer layer for high-temperature superconducting copper oxides and as protective layer in plasma display panels. Since epitaxial growth of MgO is expensive, time consuming and size restricted, other techniques have been developed to grow highly oriented MgO layers for industrial processes. MgO thin films were deposited on a tilted polycrystalline substrate by reactive sputtering using an unbalanced magnetron. By varying different deposition parameters, it is possible to grow biaxially aligned MgO layers, i.e. layers with both out-of-plane and in-plane alignment. XRD measurements were performed to examine the crystallographic structure of the thin film. The preferential out-of-plane orientation is analysed by angular scans using the peak intensity of different reflections while the in-plane orientation is determined by (002) pole figures. Fully [111] out-of-plane oriented layers were grown with a strong in-plane alignment. SEM and TEM measurements were performed to reveal the topographical and cross-sectional microstructure and to investigate the texture evolution of the MgO layers. Evolutionary columnar growth and a roof-tile surface have been observed.