P. Karmakar

Role of initial surface roughness on ion induced surface morphology

We report here the influence of initial surface roughness on the development of ion induced Si surface morphology. Surfaces of different initial roughness have been generated chemically and bombarded by 16.7keV O2+ ions at an oblique angle. It is observed that surface roughness enhances the initial perturbation, which aids to form the ion induced regular nanostructures at an ion fluence typically one to two orders of magnitude less than that are required to produce the same structures on an initially flat surface. This observation also explores the role of initial surface perturbation on the initiation of curvature dependent sputtering.

Electrochemical Ostwald ripening and surface diffusion in the galvanic displacement reaction: control over particle growth

We report the role of electrochemical Ostwald ripening and the galvanic displacement reaction in uniform particle formation on ion bombarded amorphous (i.e., composed of random atomic spacings) Ge (a-Ge) surfaces compared to crystalline germanium (c-Ge). Silver growth on c-Ge and a-Ge substrates by electroless deposition has been studied by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (XTEM), and energy dispersive X-ray spectroscopy (EDX). Introduction of defects can provide a control over particle growth by the galvanic displacement reaction that may offer continuous film growth up to a definite thickness. The possibility of surface diffusion and its consequences have also been discussed.

The role of carbon in ion beam nano-patterning of silicon

We report a comparative study of nano-pattern formations on a carbon film and a smooth Si(100) surface following inert and chemically active ion bombardment. For the case of carbon film, patterns could be formed both by inert (Ar+) and self (C+) ion bombardment with the former producing ripples at relatively lower fluence. In contrast, bombardment by inert Ar+ failed to form the nano patterns on Si surface, while bombardment by the same energy C+ generated the ripples. Thus, impurity induced chemical effect seems to be crucial rather than the Bradley-Harper or Carter-Vishnyakov effects for destabilizing the surface for ripple formation.

The influence of projectile ion induced chemistry on surface pattern formation

We report the critical role of projectile induced chemical inhomogeneity on surface nanostructure formation. Experimental inconsistency is common for low energy ion beam induced nanostructure formation in the presence of uncontrolled and complex contamination. To explore the precise role of contamination on such structure formation during low energy ion bombardment, a simple and clean experimental study is performed by selecting mono-element semiconductors as the target and chemically inert or reactive ion beams as the projectile as well as the source of controlled contamination. It is shown by Atomic Force Microscopy, Cross-sectional Transmission Electron Microscopy, and Electron Energy Loss Spectroscopy measurements that bombardment of nitrogen-like reactive ions on Silicon and Germanium surfaces forms a chemical compound at impact zones. Continuous bombardment of the same ions generates surface instability due to unequal sputtering and non-uniform re-arrangement of the elemental atom and compound. This...

Design and development of a radio frequency quadrupole linac postaccelerator for the Variable Energy Cyclotron Center rare ion beam project

A four-rod type heavy-ion radio frequency quadrupole (RFQ) linac has been designed, constructed, and tested for the rare ion beam (RIB) facility project at VECC. Designed for cw operation, this RFQ is the first postaccelerator in the RIB beam line. It will accelerate A/q < or = 14 heavy ions coming from the ion source to the energy of around 100 keV/u for subsequent acceleration in a number of Interdigital H-Linac. Operating at a resonance frequency of 37.83 MHz, maximum intervane voltage of around 54 kV will be needed to achieve the final energy over a vane length of 3.12 m for a power loss of 35 kW. In the first beam tests, transmission efficiency of about 90% was measured at the QQ focus after the RFQ for O(5+) beam. In this article the design of the RFQ including the effect of vane modulation on the rf characteristics and results of beam tests will be presented.

Coulomb explosion sputtering of selectively oxidized Si.

We have studied the sputtering of a unique system comprising of coexisting silicon and silicon oxide surfaces due to the impact of multiply charged Ar(q+) ions. Such surfaces are produced by oblique angle oxygen ion bombardment on Si(100), which results in one side oxidized ripple formation due to preferential oxygen implantation. It is observed by atomic force microscopy and conducting atomic force microscopy studies that the higher the potential energy of the Ar(q+) ion, the higher the sputtering yield of the nonconducting (oxide) side of the ripple as compared to the semiconducting side while ensuring an identical irradiation and measurement condition. It also shows experimentally the potential of highly charged ions in the gentle cleaning or tailoring of nanostructures. The results are explained in terms of the Coulomb explosion model, where potential sputtering depends on the conductivity of the ion impact sites.

Site specific isolated nanostructure array formation on a large area by broad ion beam without any mask and resist

We report the formation of isolated nanostructure arrays on a large area via broad ion beam implantation without the aid of any mask or resist. Desired ions have been implanted at specific locations of the prefabricated silicon ripple or triangular structures by exploiting the variation of local ion impact angles. We have shown that the implantation of Fe ions on an O+ ions induced pre fabricated triangular shaped patterned Si surface results in a self-organized periodic array of striped magnetic nanostructures having several micron length and about 50 nm width arranged with a spacial separation of ∼200 nm. The morphology, composition, crystalline structure, and magnetic property of these nanopatterns have been analyzed using high-resolution cross-sectional transmission electron microscopy and atomic force microscopy. A geometrical model has been proposed to explain the fundamental features of such ion-induced nanopattern structures.

A gas-jet transport and catcher technique for on-line production of radioactive ion beams using an electron cyclotron resonance ion-source

Radioactive ion beams (RIB) have been produced on-line, using a gas-jet recoil transport coupled Electron Cyclotron Resonance (ECR) ion-source at the VECC-RIB facility. Radioactive atoms∕molecules carried through the gas-jet were stopped in a catcher placed inside the ECR plasma chamber. A skimmer has been used to remove bulk of the carrier gas at the ECR entrance. The diffusion of atoms∕molecules through the catcher has been verified off-line using stable isotopes and on-line through transmission of radioactive reaction products. Beams of (14)O (71 s), (42)K (12.4 h), (43)K (22.2 h), and (41)Ar (1.8 h) have been produced by bombarding nitrogen and argon gas targets with proton and alpha particle beams from the K130 cyclotron at VECC. Typical measured intensity of RIB at the separator focal plane is found to be a few times 10(3) particles per second (pps). About 3.2 × 10(3) pps of 1.4 MeV (14)O RIB has been measured after acceleration through a radiofrequency quadrupole linac. The details of the gas-jet coupled ECR ion-source and RIB production experiments are presented along with the plans for the future.

Enhancement of optical absorption of Si (100) surfaces by low energy N+ ion beam irradiation

The increase of optical absorption efficiency of Si (100) surface by 7 keV and 8 keV N+ ions bombardment has been reported here. A periodic ripple pattern on surface has been observed as well as silicon nitride is formed at the ion impact zones by these low energy N+ ion bombardment [P. Karmakar et al., J. Appl. Phys. 120, 025301 (2016)]. The light absorption efficiency increases due to the presence of silicon nitride compound as well as surface nanopatterns. The Atomic Force Microscopy (AFM) study shows the formation of periodic ripple pattern and increase of surface roughness with N+ ion energy. The enhancement of optical absorption by the ion bombarded Si, compared to the bare Si have been measured by UV – visible spectrophotometer.

Radioactive ion beams of 111In using ECR plasma sputtering method

Radioactive ion beams of 111In (indium-111, half-life 2.8 days) have been produced using the plasma sputtering method in an electron cyclotron resonance (ECR) ion source at the Variable Energy Cyclotron Centre RIB facility. Indium isotopes were first produced by bombarding a natural silver target with a 32 MeV, 40 μA alpha particle beam from the K-130 cyclotron. After radio-chemical separation, about 25 mCi In-chloride was deposited on an aluminum electrode and inserted in the plasma chamber of the ECR. Indium ions produced by ion induced sputtering in the plasma were extracted from the ion source, isotopically separated, and a pure 111In beam was measured at the focal plane of the separator. The measured 111In beam intensity was 2.67 × 105 particles/s for a beam energy of 5 keV.