P. Kossacki

Single photon emitters in exfoliated WSe2 structures.

Crystal structure imperfections in solids often act as efficient carrier trapping centres, which, when suitably isolated, act as sources of single photon emission. The best known examples of such attractive imperfections are well-width or composition fluctuations in semiconductor heterostructures (resulting in the formation of quantum dots) and coloured centres in wide-bandgap materials such as diamond. In the recently investigated thin films of layered compounds, the crystal imperfections may logically be expected to appear at the edges of commonly investigated few-layer flakes of these materials exfoliated on alien substrates. Here, we report comprehensive optical micro-spectroscopy studies of thin layers of tungsten diselenide (WSe2), a representative semiconducting dichalcogenide with a bandgap in the visible spectral range. At the edges of WSe2 flakes (transferred onto Si/SiO2 substrates) we discover centres that, at low temperatures, give rise to sharp emission lines (100 μeV linewidth). These narrow emission lines reveal the effect of photon antibunching, the unambiguous attribute of single photon emitters. The optical response of these emitters is inherently linked to the two-dimensional properties of the WSe2 monolayer, as they both give rise to luminescence in the same energy range, have nearly identical excitation spectra and have very similar, characteristically large Zeeman effects. With advances in the structural control of edge imperfections, thin films of WSe2 may provide added functionalities that are relevant for the domain of quantum optoelectronics.

Carrier relaxation in epitaxial graphene photoexcited near the Dirac point.

We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 to 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy is tuned to values below the optical-phonon frequency; however, owing to the presence of hot carriers, optical-phonon emission is still the predominant relaxation process. For photon energies about twice the value of the Fermi energy, a transition from pump-induced transmission to pump-induced absorption occurs due to the interplay of interband and intraband processes.

Light and Electric Field Control of Ferromagnetism in Magnetic Quantum Structures

A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd(0.96)Mn(0.04)Te quantum well placed in various built-in electric fields. It is shown that both light beam and bias voltage generate an isothermal and reversible crossover between the paramagnetic and ferromagnetic phases, in the way that is predetermined by the structure design. The observed behavior is in quantitative agreement with the expectations for systems, in which ferromagnetic interactions are mediated by the weakly disordered two-dimensional hole liquid.

Optical manipulation of a single Mn spin in a CdTe-based quantum dot.

Two coupled CdTe quantum dots, selected from a self-assembled system, one of them containing a single Mn ion, were studied by continuous wave and modulated photoluminescence, photoluminescence excitation, and photon correlation experiments. Optical writing of information on the spin state of the Mn ion has been demonstrated, using the orientation of the Mn spin by spin-polarized carriers transferred from the neighboring quantum dot. Mn spin orientation time values from 20 to 100 ns were measured, depending on the excitation power. Storage time of the information on the Mn spin was found to be enhanced by application of a static magnetic field of 1 T, reaching hundreds of microseconds in the dark. Simple rate equation models were found to describe correctly the static and dynamical properties of the system.

Effect of the s , p − d exchange interaction on the excitons in Zn 1 − x Co x O epilayers

We present a spectroscopic study of ZnCoO layers grown by molecular beam epitaxy on sapphire substrates. ZnCoO is commonly considered as a promising candidate for being a Diluted Magnetic Semiconductor ferromagnetic at room temperature. We performed magneto-optical spectroscopy in the Faraday configuration, by applying a magnetic field up to 11T, at temperatures down to 1.5K. For very dilute samples (x<0.5%), the giant Zeeman splitting of the A and B excitons is observed at low temperature. It is proportional to the magnetization of isolated Co ions, as calculated using the anisotropy and g-factor deduced from the spectroscopy of the d-d transitions. This demonstrates the existence of spin-carrier coupling. Electron-hole exchange within the exciton has a strong effect on the giant Zeeman splitting observed on the excitons. From the effective spin-exciton coupling, =0.4eV, we estimate the difference of the exchange integrals for free carriers, N0 |alpha - beta|=0.8=eV. The magnetic circular dichroism observed near the energy gap was found to be proportional to the paramagnetic magnetization of anisotropic Co ions even for higher Co contents.

Tuning the electron-phonon coupling in multilayer graphene with magnetic fields

Magneto-Raman scattering study of the E2g optical phonons in multilayer epitaxial graphene grown on a carbon face of SiC is presented. At 4.2 K in magnetic field up to 33 T, we observe a series of well-pronounced avoided crossings each time the optically active inter-Landau level transition is tuned in resonance with the E2g phonon excitation (at 196 meV). The width of the phonon Raman scattering response also shows pronounced variations and is enhanced in conditions of resonance. The experimental results are well reproduced by a model that gives directly the strength of the electron-phonon interaction.

Magneto-Raman scattering of graphene on graphite: electronic and phonon excitations.

Magneto-Raman-scattering experiments from the surface of graphite reveal novel features associated to purely electronic excitations which are observed in addition to phonon-mediated resonances. Graphene-like and graphite domains are identified through experiments with ∼1  μm spatial resolution performed in magnetic fields up to 32 T. Polarization resolved measurements emphasize the characteristic selection rules for electronic transitions in graphene. Graphene on graphite displays the unexpected hybridization between optical phonon and symmetric across the Dirac point inter Landau level transitions. The results open new experimental possibilities--to use light scattering methods in studies of graphene under quantum Hall effect conditions.

Slowing hot-carrier relaxation in graphene using a magnetic field

A degenerate pump-probe technique is used to investigate the nonequilibrium carrier dynamics in multilayer graphene. Two distinctly different dynamics of the carrier relaxation are observed. A fast relaxation

Excitation mechanisms of individual Cd Te ∕ Zn Te quantum dots studied by photon correlation spectroscopy

(\ensuremath{\sim}50\text{ }\text{fs})

Optically induced energy and spin transfer in nonresonantly coupled pairs of self-assembled CdTe/ZnTe quantum dots

of the carriers after the initial effect of phase-space filling followed by a slower relaxation