P. Krewniak

Fabrication, characterization and modeling of thin silicon tandem cell on foil in four terminal configuration

The investigation samples of amorphous / microcrystalline silicon and silicon-germanium cells were made at low and high pressure as well as in graded H2, SiH4, GeH4 flows and various plasma power conditions by RF PECVD on a glass and also on a foil and were analyzed in four terminal configuration. The authors focused on fabrication of protocrystalline and microcrystalline Si and SiGe solar cells with 6%–8% efficiency, and on projecting of thicknesses of component cells as well as designing of a role of the back reflector to obtain the current and absorbed light matching in the configuration. The analyses of light transmissions and reflections, I-V-C light and dark characteristics as well as two light beam quantum efficiency measurements for the components were conducted.

Modeling of top amorphous cell in four-terminal configuration with poly-silicon solar cell on the base of I-V-C and QE research

The investigation of top amorphous cells in four-terminal configuration with bottom polycrystalline silicon cell was carried out. The top structures were made at low pressure as well as in multistep hydrogen conditions by Capacitatively Coupled Radio Frequency (13.56 MHz) Plasma Enhancement Chemical Vapor Deposition (RF PECVD) on a glass plate and a foil as well as on a polysilicon structure. However, the authors focused on fabrication of protocrystalline solar cells with 6–8% efficiency and on their properties among others studied by analysis of defect states of intrinsic layer. Finally a selection of the thickness with respect to the current and optical matching with the bottom cell is made.

Properties of Image Sensor Structure Obtained Below 120°C On The Foil By Reactive Magnetron Sputtering

Polyimide substrates are of interest because of their thermal stability, light weight, and good mechanical characteristics. This paper reports thermal control multilayer deposition experiments which have strongly affected the properties of the image sensor structure (TFT + photodiode). Particularly TFT properties have been studied with respect to difficulties of obtaining of good quality a-SiN x :H films at temperature below 120°C. We characterize the structural properties using infrared absorption, refractive index measurements, small angle x-ray diffraction and the optoelectrical measurements of the TFT and PIN diode structure. The linear image sensor consisting of two rows, 40 pixels per row, with dimensions 0.6 mm 2 was made on the polyimide foil.

X-ray matrix sensors

In this paper we present some of the newest solutions of the direct and the indirect methods of x-ray and (gamma) -ray detection applicable in medicine. We mainly describe technological postulations and several properties of linear and 2D x-ray and (gamma) -ray sensors using scintillator films, pin photodiode matrices and amorphous silicon thin film transistors.

Optimization of properties of ion-sensitive amorphous silicon (a-Si:H) based transistors

In this work the application of a-Si:H thin film transistor technology in the field of chemical sensors is presented. In particularly, the optimization of magnetron deposition process for obtaining various silicon nitride films and TFT structures are described as well as adequate structures of Ion Sensitive Field Effect Transistor with respect to the ion sensitive hydrogen properties are studied. The device shows a good Nernst response and high reproducibility but not acceptable stability yet.