P. M. Petroff

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

The 2D–3D growth mode transition during the initial stages of growth of highly strained InGaAs on GaAs is used to obtain quantum‐sized dot structures. Transmission electron micrographs reveal that when the growth of In0.5Ga0.5As is interrupted exactly at the onset of this 2D–3D transition, dislocation‐free islands (dots) of the InGaAs result. Size distributions indicate that these dots are ∼300 A in diameter and remarkably uniform to within 10% of this average size. The areal dot densities can be varied between 109 and 1011 cm−2. The uniformity of the dot sizes is explained by a mechanism based on reduction in adatom attachment probabilities due to strain. We unambiguously demonstrate photoluminescence at ∼1.2 eV from these islands by comparing samples with and without dots. The luminescent intensities of the dots are greater than or equal to those of the underlying reference quantum wells.

Cooperative Formation of Inorganic-Organic Interfaces in the Synthesis of Silicate Mesostructures

A model is presented to explain the formation and morphologies of surfactant-silicate mesostructures. Three processes are identified: multidentate binding of silicate oligomers to the cationic surfactant, preferential silicate polymerization in the interface region, and charge density matching between the surfactant and the silicate. The model explains present experimental data, including the transformation between lamellar and hexagonal mesophases, and provides a guide for predicting conditions that favor the formation of lamellar, hexagonal, or cubic mesostructures. Model Q230 proposed by Mariani and his co-workers satisfactorily fits the x-ray data collected on the cubic mesostructure material. This model suggests that the silicate polymer forms a unique infinite silicate sheet sitting on the gyroid minimal surface and separating the surfactant molecules into two disconnected volumes.

Mesostructure design with Gemini surfactants : supercage formation in a three-dimensional hexagonal array

At low temperatures, liquid crystal-like arrays made up of inorganic-cluster and organic molecular units readily undergo reversible lyotropic transformations. Gemini surfactants, with two quaternary ammonium head groups separated by a methylene chain of variable length and with each head group attached to a hydrophobic tail, can be used to control organic charge sitting relative to the bivariable hydrophobic tail configurations. This approach has led to the synthesis of a mesophase (SBA-2) that has three-dimensional hexagonal (P63/mmc) symmetry, regular supercages that can be dimensionally tailored, and a large inner surface area. This mesostructure analog of a zeolite cage structure does not appear to have a lyotropic surfactant or lipid liquid crystal mesophase counterpart. Through the modification of gemini charge separation and each of the two organic tails, these syntheses can be used to optimize templating effects, including the synthesis of MCM-48 at room temperature.

Optical emission from a charge-tunable quantum ring

Quantum dots or rings are artificial nanometre-sized clusters that confine electrons in all three directions. They can be fabricated in a semiconductor system by embedding an island of low-bandgap material in a sea of material with a higher bandgap. Quantum dots are often referred to as artificial atoms because, when filled sequentially with electrons, the charging energies are pronounced for particular electron numbers; this is analogous to Hunds rules in atomic physics. But semiconductors also have a valence band with strong optical transitions to the conduction band. These transitions are the basis for the application of quantum dots as laser emitters, storage devices and fluorescence markers. Here we report how the optical emission (photoluminescence) of a single quantum ring changes as electrons are added one-by-one. We find that the emission energy changes abruptly whenever an electron is added to the artificial atom, and that the sizes of the jumps reveal a shell structure.

Spectroscopy of nanoscopic semiconductor rings

Making use of self-assembly techniques, we realize nanoscopic semiconductor quantum rings in which the electronic states are in the true quantum limit. We employ two complementary spectroscopic techniques to investigate both the ground states and the excitations of these rings. Applying a magnetic field perpendicular to the plane of the rings, we find that, when approximately one flux quantum threads the interior of each ring, a change in the ground state from angular momentum l = 0 to l = -1 takes place. This ground state transition is revealed both by a drastic modification of the excitation spectrum and by a change in the magnetic-field dispersion of the single-electron charging energy.

Intermixing and shape changes during the formation of InAs self-assembled quantum dots

The initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum dots (QDs) are studied. For small GaAs coverages (below 5 nm), atomic force microscopy (AFM) images show partially covered island structures with a regular size distribution which are elongated in the [011] direction. Analysis of the AFM profiles show that a large anisotropic redistribution of the island material is taking place during the initial GaAs overgrowth. Short time annealing experiments together with photoluminescence spectroscopy on annealed QDs are consistent with a Ga and In intermixing during the overgrowth. Surface QDs capped with 5 nm or more GaAs show a strong luminescence intensity indicating that surface QDs are remarkably insensitive to surface recombination effects.

Self-tuned quantum dot gain in photonic crystal lasers

We demonstrate that very few (2-4) quantum dots as a gain medium are sufficient to realize a photonic-crystal laser based on a high-quality nanocavity. Photon correlation measurements show a transition from a thermal to a coherent light state proving that lasing action occurs at ultralow thresholds. Observation of lasing is unexpected since the cavity mode is in general not resonant with the discrete quantum dot states and emission at those frequencies is suppressed. In this situation, the quasicontinuous quantum dot states become crucial since they provide an energy-transfer channel into the lasing mode, effectively leading to a self-tuned resonance for the gain medium.

Controlling cavity reflectivity with a single quantum dot

Solid-state cavity quantum electrodynamics (QED) systems offer a robust and scalable platform for quantum optics experiments and the development of quantum information processing devices. In particular, systems based on photonic crystal nanocavities and semiconductor quantum dots have seen rapid progress. Recent experiments have allowed the observation of weak and strong coupling regimes of interaction between the photonic crystal cavity and a single quantum dot in photoluminescence. In the weak coupling regime, the quantum dot radiative lifetime is modified; in the strong coupling regime, the coupled quantum dot also modifies the cavity spectrum. Several proposals for scalable quantum information networks and quantum computation rely on direct probing of the cavity–quantum dot coupling, by means of resonant light scattering from strongly or weakly coupled quantum dots. Such experiments have recently been performed in atomic systems and superconducting circuit QED systems, but not in solid-state quantum dot–cavity QED systems. Here we present experimental evidence that this interaction can be probed in solid-state systems, and show that, as expected from theory, the quantum dot strongly modifies the cavity transmission and reflection spectra. We show that when the quantum dot is coupled to the cavity, photons that are resonant with its transition are prohibited from entering the cavity. We observe this effect as the quantum dot is tuned through the cavity and the coupling strength between them changes. At high intensity of the probe beam, we observe rapid saturation of the transmission dip. These measurements provide both a method for probing the cavity–quantum dot system and a step towards the realization of quantum devices based on coherent light scattering and large optical nonlinearities from quantum dots in photonic crystal cavities.

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

In the growth of InGaN/GaN multiple quantum well (MQW) structures, a novel defect (called the “V-defect”) initiates at threading dislocations in one of the first quantum wells in a MQW stack. This defect is common to almost all InGaN MQW heterostructures. The nature of the V-defect was evaluated using transmission electron microscopy (TEM), scanning TEM (STEM), and low-temperature cathodoluminescence (CL) on a series of In0.20Ga0.80N/GaN MQW samples. The structure of the V-defect includes buried side-wall quantum wells (on the {1011} planes) and an open hexagonal inverted pyramid which is defined by the six {1011} planes. Thus, in cross section this defect appears as an open “V”. The formation of the V-defect is kinetically controlled by reduced Ga incorporation on the pyramid walls ({1011} planes). The V-defect is correlated with the localized excitonic recombination centers that give rise to a long-wavelength shoulder in photoluminescence (PL) and CL spectra. This long-wavelength shoulder has the fol...

Toward quantum well wires: Fabrication and optical properties

As a first step toward the realization of a one‐dimensional carrier confining structure in semiconductors, we have fabricated GaAs quantum well wires (QWW) with submicron dimensions using molecular beam epitaxy of GaAs and Ga1−xAlxAs. The structural quality and dimensions of the QWW have been assessed by transmission electron microscopy showing that single crystal, defect‐free QWW, with dimensions as small as 200×200 A in cross section can be achieved. The optical properties measured by low‐temperature (T≳20°K) cathodoluminescence (CL) indicate a CL efficiency nearly as good as that of the quantum well material from which the QWW originated. A localization of the luminescence along the QWW axis is characteristic of QWW with sizes below a critical dimension (1.5 μm×200 A cross section). This luminescence localization and a shift of the intrinsic luminescence to lower energy in QWW structures are tentatively assigned to strain effects in these structures.