P. Mrowiński

Single photon emission at 1.55 μm from charged and neutral exciton confined in a single quantum dash

We investigate charged and neutral exciton complexes confined in a single self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 μm. The emission characteristics have been probed by measuring high-spatial-resolution polarization-resolved photoluminescence and cross-correlations of photon emission statistics at T = 5 K. The photon auto-correlation histogram of the emission from both the neutral and charged exciton indicates a clear antibunching dip with as-measured g(2)(0) values of 0.18 and 0.31, respectively. It proves that these exciton complexes confined in single quantum dashes of InP-based material system can act as true single photon emitters being compatible with standard long-distance fiber communication technology.

Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures

The work was supported by the Grant No. 2011/02/A/ST3/00152 from the Polish National Science Centre (Narodowe Centrum Nauki). K. G. acknowledges support by the Grant No. 2014/12/B/ST3/04603 from the Polish National Science Centre (Narodowe Centrum Nauki). S. H. acknowledges support from the State of Bavaria in Germany.

Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment

Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in terms of controlling the polarization anisotropy by altering the shape of the processed sub-micrometer mesa structures. Photoluminescence has been measured from exemplary single quantum dashes emitting around 1.3 and 1.55 μm and placed inside rectangular mesas of various orientation, asymmetry, and sizes. The detected degree of linear polarization of bright exciton emission ranges from −0.1 to ca. 0.55, compared to 0.25 for dashes in unaltered or isotropic in-plane dielectric surrounding. These results are interpreted by numerical simulations using an emitter coupled with a single optical mode in such a mesa and outgoing in the direction normal to the sample surface.

Highly Linearly Polarized Emission from Quantum Dash Excitons - Modelling and Experiment at the 3rd Telecom Window

This work is focused on controlling the polarization anisotropy of emission from single self-assembled InAs/InGaAlAs quantum dashes grown by molecular beam epitaxy on InP substrate. We studied the degree of linear polarization of excitonic emission for submicrometer mesa photonic structures of asymmetric inplane geometry. We present both experimental and numerical analysis performed at 1550 nm wavelength (3 telecommunication window for optical fibers), and we discussed the impact of anisotropy of the dielectric confinement, which paves the way towards a single photon source characterized by a degree of linear polarization exceeding 0.9.

Semiconductor quantum dot to fiber coupling system for 1.3 um range

We present an alignment procedure which allows for precise gluing of a structure with an optically pumped quantum emitter to the end face of zirconia ferrule with a specially fabricated high numerical aperture single-mode fiber. The proposed method is an important step towards building a single-photon source based on an InGaAs quantum dot emitting in 1.3 μm range and located deterministically in a microlens fabricated by in-situ electron beam lithography and plasma etching to improve the photon extraction efficiency. Since single QDs are very dim at room temperature which hinders QD-fiber adjustment by maximizing the collected photoluminescence signal, the developed method uses light back-reflected from the top surface of the sample with microlens as a feedback signal. Using this approach, we were able to position the high-NA fiber over the center of the microlens with an accuracy of about 150 nm in a lateral direction and 50 nm in a vertical direction. The alignment accuracy was confirmed by following the room temperature emission from quantum wells embedded in a reference microlens. We also present initial low temperature tests of the coupling system mounted in a compact and portable Stirling cryocooler.

Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography

The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfer to telecom wavelengths. As an example, we fabricate and characterize especially designed photonic structures with strain-engineered single InGaAs/GaAs quantum dots that are deterministically integrated into disc-shaped mesas. Utilizing this approach, an extraction efficiency into free-space (within a numerical aperture of 0.4) of (10±2) % has been experimentally obtained in the 1.3 μm wavelength range in agreement with finite-element method calculations. High-purity single-photon emission with g(2)(0)<0.01 from such deterministic structure has been demonstrated under quasi-resonant excitation.The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfer to telecom wavelengths. As an example, we fabricate and characterize especially designed photonic structures with strain-engineered single InGaAs/GaAs quantum dots that are deterministically integrated into disc-shaped mesas. Utilizing this approach, an extraction efficiency into free-space (within a numerical aperture of 0.4) of (10±2) % has been experimentally obtained in the 1.3 μm wavelength range in agreement with finite-element method calculations. High-purity single-photon emission with g(2)(0)<0.01 from such deterministic structure has been demonstrated under quasi-resonant excitation.