P. N. Chernykh

Nanoparticle process formation in zinc implanted silicon with followed thermal annealing

Results of temperature treatment effect on near surface layer properties of Zn ion implanted Si substrate are presented. Radiation induced point defects and Zn in depth profile was studied by Rutherford back scattering (RBS) method with use of channeling technique. Topology of substrate surface was studied by atomic force microscopy (AFM) and scaning electron microscope (SEM). Phase composition of samples was test by x-ray diffraction in grazing geometry.

Medium energy ion scattering spectroscopy: Study of germanium amorphization under ion irradiation

An experimental setup for medium energy ion scattering spectroscopy allowing materials elemental composition diagnostics has been developed. A target composed of single-crystalline Ge with a smooth surface and structural inhomogeneity several nanometers thick has been prepared for conducting the experiments. Experiments have shown that the depth resolution of the method was 6 Å.

RBS and XFA analysis of polyimide films from the mir space station

The elemental composition of polyimide film contamination was studied by the RBS and XFA methods. The films were exposed to the space environment aboard the Mir orbital space station during the KOMPLAST in-flight experiment. It was shown that the prevalent deposit element was silicon, which agrees with measurements performed on other spacecrafts.

Structure phases of fe nanoparticles in vertically aligned multi-walled carbon nanotubes

Structure and composition of arrays of vertically aligned multi-walled carbon nanotubes grown by continuous injection chemical vapor deposition method were studied using the high resolution transmission electron microscopy combined with energy dispersion spectrometry. A portion of injected Fe catalyst was found in the form of nanosized single crystalline particles with a variety of the structures of α-Fe(C), γ-Fe(C) and orthorhombic Fe3C phases encapsulated in the carbon nanotube channel or incorporated into the carbon nanotube wall. A thorough analysis revealed not only the lattice expansion of the γ-Fe(C) phase due to incorporation of carbon atoms but also a monoclinic distortion of the cubic lattice with orts c > a = b and square base transformed into a rhombic one. The monoclinic lattice distortion was referred to the uniaxial symmetry of the encapsulating tube. No evident coherency was observed in the atomic arrangement at the interface between Fe particle and inner shell of the carbon tube, as well as in the atomic arrangement of neighboring graphene shells of the carbon nanotube wall, meaning that the chirality of the shells is not coherent.

Features of TiN film deposition by the vacuum-arc method

The chemical homogeneity of TiN thin films produced by the sputtering of a titanium target in a nitrogen atmosphere are studied using atomic-force microscopy and the backscattering of helium ions. It is established that TiN films of submicron thickness contain titanium nanoparticles, the number of which increases with decreasing nitrogen pressure.

Features of the structure of TiN films after irradiation with nitrogen

In this work, we study the structure of submicron titanium-nitride films after surface treatment with a nitrogen-ion beam. It is ascertained that nitrogen-ion beams affect two-phase TiN-Ti films thus transforming them into single-phase TiN.

Ion-Beam Analysis of the Structure and Composition of Nanocomposite nc-TiC/a-C: H Coatings

The structure and composition of nanocomposite nc-TiC/a-C:H thin films prepared by closed-field unbalanced reactive magnetron sputtering in an argon-acetylene atmosphere have been investigated. The concentrations of carbon and heavier elements have been obtained by Rutherford backscattering and nuclear backscattering. The hydrogen concentration in the films has been determined by elastic recoil detection analysis. Based on the data obtained, a scheme has been proposed to evaluate the C:H matrix mass density and the sp3 and sp2 fractions in the matrix.

Measurement of elemental composition of carbon and composite ceramic materials using PIXE and RBS methods

With the help of the PIXE and RBS methods, the elemental composition of a ceramic coating on Zr alloy, surface layers of heat-treated TiNi alloy, and Ar+ implanted pyrolytic graphite is investigated. It is shown that the PIXE and RBS methods are complementary and their combined use can provide additional information on the elemental composition of the surface layers. It was determined that the microarc oxidation of Zr alloy in an electrolyte with addition of ultrafine Y2O3 powder leads to introduction of Y in the substrate material. An effect of the surface segregation of Ti was found in TiNi alloy after the heat treatment.

Kossel lines in angular distribution of X-rays excited by protons in pyrolytic graphite quasi-crystal

Kossel line profiles were experimentally studied upon 1.5-MeV proton excitation of characteristic Kα radiation of argon atoms implanted into an UPV-1T graphite quasi-crystal. It was found that Kossel line profiles depend on argon ion implantation conditions, i.e., the lines generated in crystals implanted at temperatures of 150 and 200°C exhibit different widths and contrasts. In addition to the main Kossel cone line, a second cone line was detected caused by an additional texture component in the UPV-1T pyrolytic graphite quasi-crystal.

Formation of oriented rodlike nickel silicide precipitates during magnetron deposition of carbon and nickel on silicon

Formation of rodlike structures elongated in the 〈100〉 and 〈010〉 directions of silicon crystal was observed during magnetron codeposition of carbon and nickel on (100) silicon substrate with a natural oxide layer. Rodlike structures did not form during deposition in similar conditions on (111) silicon substrate. It has been revealed that the rodlike structures represent epitaxial nickel silicide precipitates. The results of experimental study of the composition, structure, and shape of forming silicide clusters as a function of the silicon substrate orientation and the codeposited layer thickness are presented.