P. N. First

Highly ordered graphene for two dimensional electronics

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) (Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this letter the authors show that graphene grown from the SiC(0001¯) (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C face can have structural domain sizes more than three times larger than those grown on the Si face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.

Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy

Graphene grown epitaxially on SiC has been proposed as a material for carbon-based electronics. Understanding the interface between graphene and the SiC substrate will be important for future applications. We report the ability to image the interface structure beneath single-layer graphene using scanning tunneling microscopy. Such imaging is possible because the graphene appears transparent at energies of

Structural properties of the multilayer graphene/4H-SiC(0001) system as determined by surface x-ray diffraction

\ifmmode\pm\else\textpm\fi{}1\phantom{\rule{0.3em}{0ex}}\mathrm{eV}

Microscopic aspects of the initial growth of metastable fcc iron on Au(111)

above or below the Fermi energy

Interface structure of epitaxial graphene grown on 4H-SiC(0001)

({E}_{F})

Pionics: the Emerging Science and Technology of Graphene-based Nanoelectronics

. Our analysis of calculations based on density-functional theory shows how this transparency arises from the electronic structure of a graphene layer on a SiC substrate.

Atomic-scale investigation of graphene formation on 6H-SiC(0001)

We present a structural analysis of the multilayer graphene/

Silicon intercalation into the graphene-SiC interface

4H\mathrm{Si}\mathrm{C}(000\overline{1})

A system for the study of magnetic materials and magnetic imaging with the scanning tunneling microscope

system using surface x-ray reflectivity. We show that graphene films grown on the C-terminated

THz carrier dynamics in epitaxial graphene

(000\overline{1})