P. Pfeffer

Temperature dependence of the electron spin g factor in GaAs

The temperature dependence of the electron spin g factor in GaAs is investigated experimentally and theoretically. Experimentally, the g factor was measured using time-resolved Faraday rotation due to Larmor precession of electron spins in the temperature range between 4.5 K and 190 K. The experiment shows an almost linear increase of the g value with the temperature. This result is in good agreement with other measurements based on photoluminescence quantum beats and timeresolved Kerr rotation up to room temperature. The experimental data are described theoretically taking into account a diminishing fundamental energy gap in GaAs due to lattice thermal dilatation and nonparabolicity of the conduction band calculated using a five-level k·p model. At higher temperatures electrons populate higher Landau levels and the average g factor is obtained from a summation over many levels. A very good description of the experimental data is obtained indicating that the observed increase of the spin g factor with the temperature is predominantly due to band’s nonparabolicity.

Anisotropy of spin g factor in Ga As ∕ Ga 1 − x Al x As symmetric quantum wells

Five-level

Spin and cyclotron energies of electrons in GaAs ∕ Ga 1 − x Al x As quantum wells

\mathbf{k}∙\mathbf{p}

Temperature dependence of the electron spin g factor in CdTe and InP

band model is used to describe the spin

Donors in GaAs and InP at megagauss fields

g

Crossed-field hot-hole cyclotron resonance in p-Ge: nonparabolic and quantum effects

factor of conduction electrons in undoped

High Intensity p-Ge Tunable Cyclotron Resonance Laser

\mathrm{Ga}\mathrm{As}∕{\mathrm{Ga}}_{0.65}{\mathrm{Al}}_{0.35}\mathrm{As}

Theory of free-electron optical absorption in n-InSb.

quantum wells (QWs) with an external magnetic field parallel and transverse to the growth direction [001]. Far-band corrections to the model are also included in the theory. It is found that for QWs narrower than

Spin splitting of conduction subbands in III-V heterostructures due to inversion asymmetry

10\phantom{\rule{0.3em}{0ex}}\mathrm{nm}

Conduction electrons in GaAs : five-level k.p theory and polaron effects

the transverse