P.R. Palmer

Regulation of Photovoltaic Voltage

In photovoltaic power systems, both photovoltaic modules and switching-mode converters present nonlinear and time-variant characteristics, which result in a difficult control problem. This paper presents an in-depth analysis and modeling to discover the inherent features of a photovoltaic power system. The method of successive linearization simplifies the nonlinear problem back to the linear case. This paper also presents the use of Youla parameterization to design a stable control system for regulating the photovoltaic voltage. The experimental and simulation results demonstrate the effectiveness of the presented analysis, design, and implementation.

Application of Centered Differentiation and Steepest Descent to Maximum Power Point Tracking

This paper concentrates on two critical aspects to improve the performance of maximum power point tracking (MPPT). One improvement is to accurately locate the position of the maximum power point (MPP) by using the centered differentiation. Another effort is to reduce the oscillation around the MPP in steady state by controlling active perturbations. This paper also adopts the method of steepest descent for MPPT, which shows faster dynamic response and smoother steady state than the method of hill climbing. Comprehensive experimental evaluations have successfully illustrated the effectiveness of the proposed algorithm.

The series connection of IGBTs with active voltage sharing

This paper presents the reasons that make series operation of insulated gate bipolar transistors (IGBTs) attractive and challenging and reviews the methods that may be used. Then, a new approach, which uses the IGBTs gate-controlled active regime in place of large voltage-sharing snubbers, is proposed. Analytical and simulation techniques are used to study the performance and conditions for stability given. It is concluded that when making each IGBT voltage follow a reference input, with closed-loop voltage control, the IGBTs are able to share the transient turn-off voltage without turn-off snubbers. This technique may lead to more compact and efficient high-voltage-power modules.

Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models

A practical and accurate parameter extraction method is presented for the Fourier-based-solution physics-based insulated gate bipolar transistor (IGBT) and power diode models. The goal is to obtain a model accurate enough to allow switching loss prediction under a variety of operating conditions. In the first step of the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the six parameters required for the diode model and of the 12 and 15 parameters required for the nonpunch-through (NPT) and punch-through (PT) IGBT models, respectively. The second part of the extraction procedure is an automated formal optimization step that refines the parameter estimation. Validation with experimental results from various structures of IGBT demonstrates the accuracy of the proposed IGBT and diode models and the robustness of the parameter extraction method.

Exploration of Power Device Reliability using Compact Device Models and Fast Electro-Thermal Simulation

This paper presents the application of compact insulated gate bipolar transistor and p-i-n diode models, including features such as local lifetime control and field-stop technology, to the full electrothermal system simulation of a hybrid electric vehicle converter using a lookup table of device losses. The vehicle converter is simulated with an urban driving cycle (the federal urban driving schedule), which is used to generate transient device temperature profiles. A methodology is also described to explore the converter reliability using the temperature profile, with rainflow cycle counting techniques from material fatigue analysis. The effects of ambient temperature, driving style, and converter design on converter reliability are also investigated.

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

In many power converter applications, particularly those with high variable loads, such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the insulated gate bipolar transistor (IGBT) junction temperature using the collector voltage dV/dt at turn-OFF is outlined. A theoretical closed-form expression for the dV/dt at turn-OFF is derived, closely agreeing with experimental measurements. The role of dV/dt in dynamic avalanche in high-voltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV/dt are discussed, including implementation of such a temperature measurement technique.

Active Voltage control of IGBTs for high power applications

The operation of an insulated gate bipolar transistor (IGBT) in its active region is a well established technique for withstanding short circuits and also for dv/dt control. In this paper, we exploit the active behavior of the IGBT, applying a voltage feedback loop to the IGBT to control its switching. It is shown that adding a bias to the demand reference waveform shifts the IGBT into the active region and permits wide bandwidth operation over most of the switching transient. The operation of the IGBT is reported in detail, making reference to a selection of experimental waveforms for 400-A, 1700-V capsule IGBTs. The implementation required for control of such large IGBT modules and capsule devices for high power applications is described and discussed. It is concluded that the active voltage control method allows the operation of high power IGBT circuits to be closely defined.

Transient Electrothermal Simulation of Power Semiconductor Devices

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.

Parameter extraction for a physics-based circuit simulator IGBT model

A practical parameter extraction method is presented for the Fourier-based-solution physics-based IGBT model. In the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the eleven and thirteen parameters required for the NPT and PT IGBT models, respectively. Validation with experimental results from various structure IGBTs demonstrates the accuracy of the proposed IGBT model and the robustness of the parameter extraction method.

A 3GHz Switching DC-DC Converter Using Clock-Tree Charge-Recycling in 90nm CMOS with Integrated Output Filter

A 90nm buck converter is intended for complex multi-core ICs. Using the 3GHz system clock for switching reduces the area to 0.27mm2 and allows the output filter to be integrated. Efficiency is increased by recycling clock charge and delivering it to the load instead of ground. A dedicated 3GHz clock circuit driving 12pF consumes 39.9mW. In contrast, a combined clock and converter circuit consumes 56.2mW and delivers 25.7mW at the converter output. Regulation is achieved through PWM of the clock. The circuit converts 1.0V to between 0.5 to 0.7V at 40 to 100mA.