P. Spano

Phase noise and spectral line shape in semiconductor lasers

Experimental results concerning the study of phase noise in single-mode semiconductor lasers are reported, which show a strict connection between phase and intensity noise. In particular, phase-noise spectrum is found to present a sharp peak at the same peak frequency of intensity-noise spectrum, a fact which is proven to be responsible for the appearance of satellite peaks in the emission line shape. Direct measurements of the line shape, performed by means of a Fabry-Perot interferometer, are in agreement with the line shape evaluated by using phase-noise spectrum measurements.

Four-wave mixing in traveling-wave semiconductor amplifiers

The traveling-wave equations of four-wave mixing in semiconductor amplifiers are solved analytically including saturation of the amplifier. Excellent agreement is obtained with numerical solutions of the traveling-wave equations. The analytical model is used to analyze a highly nondegenerate four-wave mixing experiment in a bulk semiconductor amplifier. >

Theory of noise in semiconductor lasers in the presence of optical feedback

We derive analytical expressions for the power spectral densities of intensity and frequency noise of single mode semiconductor lasers in the presence of an optical feedback. By explicitly taking into account the spontaneous emission processes into the laser mode, we obtain a behavior which, at high frequencies significantly differs from the usual one, and is in good agreement with recent experimental results. In particular, we are able to show in which way the intensity and frequency noise, besides being influenced by the external cavity length, are affected by the presence of the well known resonant peaks in the noise spectra of the solitary laser and how a substantial lowering and flattening in the noise spectra can be obtained with external cavity round trip times shorter than the inverse of the peak resonant frequency. We also present experimental results in good agreement with the theoretical ones.

Injection locking in distributed feedback semiconductor lasers

Injection locking properties of distributed feedback semiconductor lasers are studied systematically. Due to the high side mode suppression, these devices show different locking properties when compared to lasers with Fabry-Perot structures. The main result is the identification of four regimes for different injection levels. In particular, a symmetrical locking band at low optical injection level is confirmed. The presence of this symmetrical band can be exploited in some applications. As examples, the measurement of the linewidth enhancement factor and the phase-shift-keying modulation capability are reported. >

Efficiency and noise performance of wavelength converters based on FWM in semiconductor optical amplifiers

All optical frequency converters are key devices for new-conception optical networks. A theoretical model is presented to evaluate performances of frequencies converters based on highly nondegenerate four-wave mixing (FWM) in semiconductor amplifiers. Conversion efficiency and noise performances are evaluated in generic saturation conditions and compared with experimental results.<<ETX>>

Frequency and intensity noise in injection-locked semiconductor lasers: Theory and experiments

Analytical expressions for the power spectral densities of intensity and frequency noise of single-mode semiconductor lasers operating in a regime of injection locking are derived by appropriately taking into account the spontaneous emission processes into the lasing modes of both the master and slave lasers. They show how the noise spectra of the slave are influenced by the value of the injected power, by the difference between the emission frequencies of the master and slave optical cavities, and how they are correlated to the noise properties of both the master and the free-running slave. In particular, the very low frequency part of the frequency noise of the slave turns out to coincide with that of the master within a certain frequency region whose range increases as the values of the injected signal does, too. We also present measurements of the power spectral densities obtained by means of an experimental apparatus similar to that described in [1] and show how the experimental results are accounted for by the present theory.

Four-wave mixing in semiconductor optical amplifiers: a practical tool for wavelength conversion

Four-wave mixing in semiconductor optical amplifiers is used to produce wavelength conversion. We report an extended study on the dependence of efficiency and noise on device length, pump power, operation wavelength and conversion interval. The use of longer active regions is a good way to obtain performance as good as requested by the most advanced telecommunication systems.

Low-noise and very high-efficiency four-wave mixing in 1.5-mm-long semiconductor optical amplifiers

Very high four-wave mixing (FWM) efficiency and signal-to-background ratio (SBR) are obtained in a 1.5-mm-long bulk semiconductor optical amplifier. The FWM efficiency is measured to be 5 dB at 1-THz pump-signal detuning, which is the highest value reported to date. With a pump power of -1.4 dBm, the SBR is in excess of 20 dB in a bandwidth of 12.5 GHz, for a pump-signal detuning range as large as 2 THz and the efficiency is under the same conditions larger than -1 dB for a pump-signal detuning range as large as 1 THz. These results make FWM an attractive method for practical wavelength conversion. Some low-detuning measurements show a maximum efficiency around 8 GHz.

Phase noise in semiconductor lasers: A theoretical approach

Noise phenomena in semiconductor lasers have been extensively studied from an experimental point of view because of their importance in designing optical communication systems. Recently, a semiclassical theory of laser noise has been presented [1]. In this paper, following a different and simpler approach, we obtain analytical expressions for the intensity and phase noise power spectra which agree with experimental results.

VERY HIGH EFFICIENCY FOUR-WAVE MIXING IN A SINGLE SEMICONDUCTOR TRAVELING-WAVE AMPLIFIER

We report on high efficiency frequency‐conversion obtained by four‐wave mixing in a single traveling‐wave semiconductor optical amplifier. Efficiency in excess of 0 dB is demonstrated for frequency conversion up to 2 THz. Measurements of the signal to the amplified spontaneous emission background ratio are also presented.