P. V. Bogdanov

Evidence for an Energy Scale for Quasiparticle Dispersion in Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}

Quasiparticle dispersion in Bi2Sr2CaCu2O8 is investigated with improved angular resolution as a function of temperature and doping. Unlike the linear dispersion predicted by the band calculation, the data show a sharp break in dispersion at 50+/-15 meV binding energy where the velocity changes by a factor of 2 or more. This change provides an energy scale in the quasiparticle self-energy. This break in dispersion is evident at and away from the d-wave node line, but the magnitude of the dispersion change decreases with temperature and with increasing doping.

Bilayer Splitting in the Electronic Structure of Heavily Overdoped Bi2Sr2CaCu2O8 + delta

The electronic structure of heavily overdoped Bi(2)Sr(2)CaCu(2)O(8+delta) is investigated by angle-resolved photoemission spectroscopy. The long-sought bilayer band splitting in this two-plane system is observed in both normal and superconducting states, which qualitatively agrees with the bilayer Hubbard model calculations. The maximum bilayer energy splitting is about 88 meV for the normal state feature, while it is only about 20 meV for the superconducting peak.

Dual nature of the electronic structure of (La2-x-yNdySrx)CuO4 and La1.85Sr0.15CuO4

High resolution angle-resolved photoemission measurements have been carried out on (La_1.4-xNd_0.6Sr_x)CuO_4, a model system with static stripes, and (La_1.85Sr_0.15)CuO_4, a high temperature superconductor (T_c=40K) with dynamic stripes. In addition to the straight segments near (pi, 0) and (0, pi) antinodal regions, we have identified the existence of nodal spectral weight and its associated Fermi surface in the electronic structure of both systems. The ARPES spectra in the nodal region show well-defined Fermi cut-off, indicating a metallic character of this charge-ordered state. This observation of nodal spectral weight, together with the straight segments near antinodal regions, reveals dual nature of the electronic structure of the stripes due to the competition of order and disorder.

Photoemission study of Pb doped Bi 2 Sr 2 CaCu 2 O 8 : A Fermi surface picture

High resolution angle resolved photoemission data from Pb doped Bi_2Sr_2CaCu_2O_8 (Bi2212) with suppressed superstructure is presented. Improved resolution and very high momentum space sampling at various photon energies reveal the presence of two Fermi surface pieces. One has the hole-like topology, while the other one has its van Hove singularity very close to (pi,0), its topology at some photon energies resembles the electron-like piece. This result provides a unifying picture of the Fermi surface in the Bi2212 compound and reconciles the conflicting reports.

Angle-resolved photoemission spectral function analysis of the electron-doped cuprate Nd 1.85 Ce 0.15 CuO 4

Using methods made possible by recent advances in photoemission technology, we perform an indepth line shape analysis of the angle-resolved photoemission spectra of the electron doped (n-type) cuprate superconductor

Dual nature of the electronic structure of (La(2--x--y)Nd(y)Sr(x))CuO(4) and La(1.85)Sr(0.15)CuO(4).

{\mathrm{Nd}}_{1.85}{\mathrm{Ce}}_{0.15}{\mathrm{CuO}}_{4}.

Dual Nature of the Electronic Structure of the Stripe Phase

Unlike for the p-type materials, we only observe weak mass renormalizations near 50--70 meV. This may be indicative of smaller electron-phonon coupling or due to the masking effects of other interactions that make the electron-phonon coupling harder to detect. This latter scenario may suggest limitations of the spectral function analysis in extracting electronic self-energies when some of the interactions are highly momentum dependent.

ARPES study of lightly doped La2-xSrxCuO4

High resolution angle-resolved photoemission measurements have been carried out on (La_1.4-xNd_0.6Sr_x)CuO_4, a model system with static stripes, and (La_1.85Sr_0.15)CuO_4, a high temperature superconductor (T_c=40K) with dynamic stripes. In addition to the straight segments near (pi, 0) and (0, pi) antinodal regions, we have identified the existence of nodal spectral weight and its associated Fermi surface in the electronic structure of both systems. The ARPES spectra in the nodal region show well-defined Fermi cut-off, indicating a metallic character of this charge-ordered state. This observation of nodal spectral weight, together with the straight segments near antinodal regions, reveals dual nature of the electronic structure of the stripes due to the competition of order and disorder.

Dual Nature of the Electronic Structure of (La{sub 2-x-y}Nd{sub y}Sr{sub x})CuO{sub 4} and La{sub 1.85}Sr{sub 0.15}CuO{sub 4}

High resolution angle-resolved photoemission measurements have been carried out on (La_1.4-xNd_0.6Sr_x)CuO_4, a model system with static stripes, and (La_1.85Sr_0.15)CuO_4, a high temperature superconductor (T_c=40K) with dynamic stripes. In addition to the straight segments near (pi, 0) and (0, pi) antinodal regions, we have identified the existence of nodal spectral weight and its associated Fermi surface in the electronic structure of both systems. The ARPES spectra in the nodal region show well-defined Fermi cut-off, indicating a metallic character of this charge-ordered state. This observation of nodal spectral weight, together with the straight segments near antinodal regions, reveals dual nature of the electronic structure of the stripes due to the competition of order and disorder.

Dual Nature of the Electronic Structure of (Lasb2-x-yNdsbySrsbx)CuOsb4 and Lasb1.85Srsb0.15CuOsb4

Abstract Lightly doped La 2− x Sr x CuO 4 in the so-called “insulating” spin-glass phase has been studied by angle-resolved photoemission spectroscopy. A quasi-particle (QP) peak crossing the Fermi level has been observed in the node direction of the d-wave superconducting gap, forming an “arc” of Fermi surface consistent with the recently observed metallic transport behavior at high temperatures of lightly doped materials. The spectral weight of the nodal QP smoothly increases with hole doping, corresponding to the n ∼ x behavior of the carrier number in the underdoped and lightly doped regions.