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Dive into the research topics where P. Vilmercati is active.

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Featured researches published by P. Vilmercati.


Physical Review B | 2009

Erratum: Evidence for three-dimensional Fermi-surface topology of the layered electron-doped iron superconductor Ba(Fe1-xCox)2As2

P. Vilmercati; A. V. Fedorov; I. Vobornik; U. Manju; G. Panaccione; A. Goldoni; Athena S. Sefat; Michael A. McGuire; B. C. Sales; R. Jin; David Mandrus; David J. Singh; Norman Mannella

The electronic structure of electron doped iron-arsenide superconductors Ba(Fe1- xCox)2As2 has been measured with Angle Resolved Photoemission Spectroscopy. The data reveal a marked photon energy dependence of points in momentum space where the bands cross the Fermi energy, a distinctive and direct signature of three-dimensionality in the Fermi surface topology. By providing a unique example of high temperature superconductivity hosted in layered compounds with three-dimensional electronic structure, these findings suggest that the iron-arsenides are unique materials, quite different from the cuprates high temperature superconductors.


Physical Review B | 2010

Electronic Structure of CeFeAsO1-xFx (x=0, 0.11/x=0.12) compounds

F Bondino; E Magnano; Ch Booth; F Offi; G. Panaccione; M Malvestuto; G Paolicelli; L Simonelli; F Parmigiani; Ma Mcguire; A. S. Sefat; Bc Sales; R. Jin; P. Vilmercati; D. Mandrus; Dj Singh; Norman Mannella

We report an extensive study on the intrinsic bulk electronic structure of the high-temperature superconductor CeFeAsO{sub 0.89}F{sub 0.11} and its parent compound CeFeAsO by soft and hard x-ray photoemissions, x-ray absorption, and soft x-ray emission spectroscopies. The complementary surface/bulk probing depth, and the elemental and chemical sensitivity of these techniques allow resolving the intrinsic electronic structure of each element and correlating it with the local structure, which has been probed by extended x-ray absorption fine-structure spectroscopy. The measurements indicate a predominant 4f{sup 1} (i.e., Ce{sup 3+}) initial-state configuration for cerium and an effective valence-band-to-4f charge-transfer screening of the core hole. The spectra also reveal the presence of a small Ce f{sup 0} initial-state configuration, which we assign to the occurrence of an intermediate-valence state. The data reveal a reasonably good agreement with the partial density of states as obtained in standard density-functional calculations over a large energy range. Implications for the electronic structure of these materials are discussed.


Physical Review B | 2010

Orbital symmetry of Ba(Fe1-xCox)2As2 superconductors probed with x-ray absorption spectroscopy

C. Parks Cheney; Federica Bondino; T. A. Callcott; P. Vilmercati; David L. Ederer; Elena Magnano; M. Malvestuto; F. Parmigiani; Athena S. Sefat; Michael A. McGuire; Rongying Jin; Brian C. Sales; David Mandrus; David J. Singh; J. W. Freeland; Norman Mannella

The orbital symmetries of electron-doped iron-arsenide superconductors Ba(Fe{sub 1-x}Co{sub x}){sub 2}As{sub 2} have been measured with x-ray absorption spectroscopy. The data reveal signatures of Fe d electron itinerancy, weak electronic correlations, and a high degree of Fe-As hybridization related to the bonding topology of the Fe d{sub xz+yz} states, which are found to contribute substantially at the Fermi level. The energies and detailed orbital character of Fe and As derived unoccupied s and d states are found to be in remarkably good agreement with the predictions of standard density-functional theory.


Nature Communications | 2017

Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping

Fangfei Ming; Daniel Mulugeta; Weisong Tu; Tyler S. Smith; P. Vilmercati; Geunseop Lee; Ying-Tzu Huang; Renee D. Diehl; Paul C. Snijders; Hanno H. Weitering

Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.


Applied Physics Letters | 2016

Atomically flat reconstructed rutile TiO2(001) surfaces for oxide film growth

Yang Wang; Shinbuhm Lee; P. Vilmercati; Ho Nyung Lee; Hanno H. Weitering; Paul C. Snijders

The availability of low-index rutile TiO2 single crystal substrates with atomically flat surfaces is essential for enabling epitaxial growth of rutile transition metal oxide films. The high surface energy of the rutile (001) surface often leads to surface faceting, which precludes the sputter and annealing treatment commonly used for the preparation of clean and atomically flat TiO2(110) substrate surfaces. In this work, we reveal that stable and atomically flat rutile TiO2(001) surfaces can be prepared with an atomically ordered reconstructed surface already during a furnace annealing treatment in air. We tentatively ascribe this result to the decrease in surface energy associated with the surface reconstruction, which removes the driving force for faceting. Despite the narrow temperature window where this morphology can initially be formed, we demonstrate that it persists in homoepitaxial growth of TiO2(001) thin films. The stabilization of surface reconstructions that prevent faceting of high-surface-e...The availability of low-index rutile TiO2 single crystal substrates with atomically flat surfaces is essential for enabling epitaxialgrowth of rutile transition metal oxide films. The high surface energy of the rutile (001) surface often leads to surface faceting, which precludes the sputter and annealing treatment commonly used for the preparation of clean and atomically flat TiO2(110) substrate surfaces. In this work, we reveal that stable and atomically flat rutile TiO2(001) surfaces can be prepared with an atomically ordered reconstructedsurface already during a furnace annealing treatment in air. We tentatively ascribe this result to the decrease in surface energy associated with the surface reconstruction, which removes the driving force for faceting. Despite the narrow temperature window where this morphology can initially be formed, we demonstrate that it persists in homoepitaxialgrowth of TiO2(001) thin films. The stabilization of surface reconstructions that prevent faceting of high-surface-energy crystal faces may offer a promising avenue towards the realization of a wider range of high quality epitaxial transition metal oxide heterostructures.


Physical Review B | 2012

Direct probe of the variability of Coulomb correlation in iron pnictide superconductors

P. Vilmercati; C. Parks Cheney; Federica Bondino; Elena Magnano; Marco Malvestuto; Michael A. McGuire; Athena Safa-Sefat; Brian C. Sales; D. Mandrus; David J. Singh; Michelle Johannes; Norman Mannella

We use core-valence-valence Auger spectra to probe the Coulomb repulsion between holes in the valence band of Fe pnictide superconductors. By comparing the two-hole final-state spectra to density functional theory calculations of the single-particle density of states, we extract a measure of the electron correlations that exist in these systems. Our results show that the Coulomb repulsion is highly screened and can definitively be considered as weak. We also find that there are differences between the 1111 and 122 families and even a small variation as a function of the doping x in Ba(Fe{sub 1-x}Co{sub x}){sub 2}As{sub 2}. We discuss how the values of the hole-hole Coulomb repulsion obtained from our study relate to the onsite Coulomb parameter U used in model and first-principles calculations based on dynamical mean field theory and establish an upper bound for its effective value. Our results impose stringent constraints on model-based phase diagrams that vary with the quantity U or U/W by restricting the latter to a rather small range of values.


Physical Review Letters | 2009

Growth of Dome-Shaped Carbon Nanoislands on Ir(111): The Intermediate between Carbidic Clusters and Quasi-Free-Standing Graphene

Paolo Lacovig; Monica Pozzo; Dario Alfè; P. Vilmercati; Alessandro Baraldi; Silvano Lizzit


Physical Review Letters | 2014

Origins of electronic band gap reduction in Cr/N codoped TiO2.

C. Parks Cheney; P. Vilmercati; E W Martin; Mirco Chiodi; Luca Gavioli; Murari Regmi; Gyula Eres; T. A. Callcott; Hanno H. Weitering; Norman Mannella


Physical Review B | 2012

Itinerant electrons, local moments, and magnetic correlations in the pnictide superconductors CeFeAsO1 xFx and Sr(Fe1 xCox)2As2

P. Vilmercati; A. V. Fedorov; Federica Bondino; F Offi; G. Panaccione; Paolo Lacovig; L. Simonelli; Michael A. McGuire; Athena S. Sefat; D. Mandrus; Brian C. Sales; T. Egami; Wei Ku; Norman Mannella


Physical Review B | 2016

Electronic structure of the chiral helimagnet and3d-intercalated transition metal dichalcogenideCr1/3NbS2

N. Sirica; Sung-Kwan Mo; Federica Bondino; Igor Píš; Silvia Nappini; P. Vilmercati; Jieyu Yi; Zheng Gai; Paul C. Snijders; Pranab Kumar Das; I. Vobornik; Nirmal Ghimire; Michael R. Koehler; Ling Li; D. Sapkota; David S. Parker; D. Mandrus; Norman Mannella

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Norman Mannella

Lawrence Berkeley National Laboratory

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D. Mandrus

State University of New York System

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Michael A. McGuire

Oak Ridge National Laboratory

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A. V. Fedorov

Lawrence Berkeley National Laboratory

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Brian C. Sales

Oak Ridge National Laboratory

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