P. Wójcik

Intrinsic oscillations of spin current polarization in a paramagnetic resonant tunneling diode

A spin- and time-dependent electron transport has been studied in a paramagnetic resonant tunneling diode using the self-consistent Wigner-Poisson method. Based on the calculated current-voltage characteristics in an external magnetic field we have demonstrated that under a constant bias both the spin-up and spin-down current components exhibit the THz oscillations in two different bias voltage regimes. We have shown that the oscillations of the spin-up (down) polarized current result from the coupling between the two resonance states: one localized in the triangular quantum well created in the emitter region and the second localized in the main quantum well. We have also elaborated the one-electron model of the current oscillations, which confirms the results obtained with the Wigner-Poisson method. The spin current oscillations can lower the effectiveness of spin filters based on the paramagnetic resonant tunneling structures and can be used to design the generators of the spin polarized current THz oscillations that can operate under the steady bias and constant magnetic field.

Self-consistent Wigner distribution function study of gate-voltage controlled triple-barrier resonant tunnelling diode

The electron transport through the triple-barrier resonant tunnelling diode (TBRTD) has been studied by the self-consistent numerical method for the Wigner–Poisson problem. The electron flow through the TBRTD can be controlled by the gate voltage applied to one of the potential well regions. For different gate voltage values we have determined the current–voltage characteristics, potential energy profiles and electron density distribution. We have found the enhancement of the peak-to-valley ratio (up to ~10), the appearance of the linear current versus bias voltage behaviour within the negative-differential resistance region and the bistability of the current–voltage characteristics. We provide a physical interpretation of these results based on the analysis of the self-consistent potential profiles and electron density distribution.

Magnetoresistance anomalies resulting from Stark resonances in semiconductor nanowires with a constriction

Magnetotransport properties of a semiconductor nanowire with a constriction have been studied within the Landauer-Büttiker formalism in the presence of the axially oriented magnetic field at low temperatures. The one-electron quantum states in the nanowire have been calculated within the adiabatic approximation which takes into account the three-dimensional structure of the nanowire and allows us to study the effect of the transverse quantum states on the electronic current. The calculated current-voltage characteristics exhibit well pronounced peaks that result from the enhancement of the electron transmission by the Stark resonant states formed in the triangular quantum well near the constriction. The effect of the Stark resonances is clearly manifested in the magnetoresistance as a function of the drain-source voltage. The calculated magnetoresistance exhibits two interesting features: (i) rapid jumps at certain voltages, caused by the enhancement of the electron transmission by the Stark resonances, (ii) changes of sign that stem from the magnetic-field induced changes of the current-voltage characteristics slope. The influence of the constriction parameters (radius, length, smoothness of the potential barrier, position of the constriction in the nanowire) on the electronic current has also been analyzed. Since the effective potential barrier created by the constriction in the nanowire is similar to that generated by the negatively charged gate surrounding the nanowire, the presented results can also be applied to the description of the magnetoresistance in the gated nanowires.

Intrinsic current oscillations in an asymmetric triple-barrier resonant tunnelling diode

The electronic transport characteristics of an asymmetric triple-barrier resonant tunnelling diode are calculated by the time-dependent Wigner–Poisson method. The intrinsic current oscillations are found in two separate bias voltage ranges. The first one is located below the resonant current peak, and the second lies in the negative differential resistance region. We provide the explanation of the current density oscillations in these two separate bias voltage ranges based on the analysis of the self-consistent potential profiles and changes of electron density. We have shown that two different formation mechanisms are responsible for the current density oscillations in these two bias voltage ranges. In the bias voltage range below the resonant current peak in the current–voltage characteristics, the current density oscillations are caused by the coupling between quasi-bound states in the left and right quantum wells. On the other hand, the current density oscillations in the negative differential resistance region result from the coupling between quasi-bound states in the left quantum well and the quantum well formed in the region of the left contact.

Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact

We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be used to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics.

Quantum size effect on the paramagnetic critical field in free-standing superconducting nanofilms

The quantum size effect on the in-plane paramagnetic critical field in Pb(1 1 1) free-standing nanofilms is investigated with the use of the spin-generalized Bogoliubov-de Gennes equations. It is shown that the critical field oscillates as a function of the nanofilm thickness with the period ∼ 2 ML (even-odd oscillations), modulated by the beating effect. The calculated values of the critical field for different nanofilm thicknesses are analyzed in the context of the Clogston-Chandrasekhar limit. It is found that the critical field for superconducting nanofilms differs from this limit. This phenomena is explained in terms of quantization of the electron energy caused by the confinement of electron motion in a direction perpendicular to the film. The thermal effect and thickness-dependence of electron-phonon coupling on the value of the critical magnetic field are also studied.

Spin transistor operation driven by the Rashba spin-orbit coupling in the gated nanowire

A theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the electron current flowing from the source (spin injector) to the drain (spin detector) oscillates as a function of the gate voltage, which results from the precession of the electron spin caused by the Rashba spin-orbit interaction in the vicinity of the gate. We have studied the operation of the spin transistor under the following conditions: (A) the full spin polarization of electrons in the contacts, zero temperature, and the single conduction channel corresponding to the lowest-energy subband of the transverse motion and (B) the partial spin polarization of the electrons in the contacts, the room temperature, and the conduction via many transverse subbands taken into account. For case (A), the spin-polarized current can be switched on/off by the suitable tuning of the gate voltage, for case (B) the current also exhibits the pronounced oscillations but with no-zero minimal values. The computational results obtained for case (B) have been compared with the recent experimental data and a good agreement has been found.

Resonant Landau–Zener transitions in a helical magnetic field

Spin-dependent electron transport has been studied in magnetic semiconductor waveguides (nanowires) in the helical magnetic field. We have shown that—apart from the well-known conductance dip located at the magnetic field equal to the helical-field amplitude Bh—the additional conductance dips (with zero conductance) appear at a magnetic field different from Bh. This effect occurring in the non-adiabatic regime is explained as resulting from the resonant Landau–Zener transitions between the spin-split subbands.

Wigner distribution function description of a multilayered nanostructure with magnetic impurities

The Wigner distribution function formalism is applied to the description of transport properties of spintronic multilayer nanodevice. The central layer of the nanodevice is doped with magnetic impurities. The current-voltage characteristics and the spin polarisation of current are calculated.

Spin filtering effect generated by the inter-subband spin-orbit coupling in the bilayer nanowire with the quantum point contact

The spin filtering effect in the bilayer nanowire with quantum point contact is investigated theoretically. We demonstrate the new mechanism of the spin filtering based on the lateral inter-subband spin-orbit coupling, which for the bilayer nanowires has been reported to be strong. The proposed spin filtering effect is explained as the joint effect of the Landau-Zener intersubband transitions caused by the hybridization of states with opposite spin (due to the lateral Rashba SO interaction) and the confinement of carriers in the quantum point contact region.