Pan Jiaoqing

Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping

A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si(001) substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposition by using a two-step growth process. Threading dislocations arising from lattice mismatch are trapped by laterally confining sidewalls, and antiphase domains boundaries are completely restricted by V-groove trenches with Si {111} facets. Material quality is confirmed by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution X-ray diffraction. Low temperature photoluminescence (PL) measurement is used to analyze the thermal strain relaxation in GaAs layers. This approach shows great promise for the realization of high mobility devices or optoelectronic integrated circuits on Si substrates.

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm−2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

InP Based PD/EAM Integrated Photonic Switch

A new compact three-port InP based PD/EAM (photo-detector/electro-absorption modulator) integrated photonic switch is reported. The device demonstrates bi-directional wavelength conversion over 20 nm at 2.5 Gbit/s with a low input optical power of about 20 mW.

Lattice Strain Induced by Ion Implantation in AlGaAs/AlGaInAs Quantum Well Samples

Si+ ions of 350 keV have been implanted into AlGaAs/AlGaInAs quantum well samples in the dose range from 5×1013cm-2to 5×1014cm-2. The Raman spectra and high resolution x-ray diffraction (HRXRD) were measured from these implanted samples as well as the non-implanted sample. In the implanted layers the average strain which was evaluated by HRXRD increases with the implantation doses and varies from 0.0011 to 0.0029. The quantum well interface intermixing effect and compositional modification are also observed from HRXRD. At the higher doses, an abnormal annealing procedure takes place and it partly removes damage, but the strain remains almost unchanged in the epilayers.