Pan Ma

Mid-infrared supercontinuum generation in chalcogenides

Yi Yu acknowledges the financial support from the China Scholarship Council for her PhD Scholarship No. 201206110048. This research was conducted by the Australian Research Council Centre of Excellence for Ultrahigh Bandwidth Devices for Optical Systems (project number CE110001018). Dr Zhiyong Yang is supported by ARC DECRA project DE120101036 and Dr Duk-Yong Choi by ARC Future Fellowship FT110100853.

Low-loss chalcogenide waveguides for chemical sensing in the mid-infrared.

We report the characteristics of low-loss chalcogenide waveguides for sensing in the mid-infrared (MIR). The waveguides consisted of a Ge₁₁.₅As₂₄Se₆₄.₅ rib waveguide core with a 10nm fluoropolymer coating on a Ge₁₁.₅As₂₄S₆₄.₅ bottom cladding and were fabricated by thermal evaporation, photolithography and ICP plasma etching. Over most of the functional group band from 1500 to 4000 cm⁻¹ the losses were < 1 dB/cm with a minimum of 0.3 dB/cm at 2000 cm⁻¹. The basic capabilities of these waveguides for spectroscopy were demonstrated by measuring the absorption spectrum of soluble Prussian blue in Dimethyl Sulphoxide.

Nonlinear optical response of low loss silicon germanium waveguides in the mid-infrared

We have investigated the nonlinear optical response of low loss Si(0.6)Ge(0.4) / Si waveguides in the mid-infrared wavelength range from 3.25- 4.75μm using picosecond optical pulses. We observed and measured the three and four-photon absorption coefficients as well as the Kerr nonlinear refractive index. The dynamics of the spectral broadening suggests that, in addition to multiphoton absorption, the corresponding higher order nonlinear refractive phenomena also needs to be included when high optical pulse intensities are used at mid-infrared wavelengths in this material.

High Q factor chalcogenide ring resonators for cavity-enhanced MIR spectroscopic sensing

We report the characteristics of high Q factor chalcogenide ring resonators designed for sensing in the mid-infrared (MIR). The resonators consisted of an exposed Ge11.5As24Se64.5 core on a Ge11.5As24S64.5 bottom cladding and were fabricated in the racetrack coupled ring structure. Loaded Q factors at 5.2μm up to 58,000were obtained, corresponding to an intrinsic Q of 145,000 and a waveguide propagation loss of 0.84dB/cm.

Mid-infrared nonlinear optical response of Si-Ge waveguides with ultra-short optical pulses

We characterize the nonlinear optical response of low loss Si(0.6)Ge(0.4) / Si waveguides in the mid-infrared between 3.3 μm and 4 μm using femtosecond optical pulses. We estimate the three and four-photon absorption coefficients as well as the Kerr nonlinear refractive index from the experimental measurements. The effect of multiphoton absorption on the optical nonlinear Kerr response is evaluated and the nonlinear figure of merit estimated providing some guidelines for designing nonlinear optical devices in the mid-IR. Finally, we compare the impact of free-carrier absorption at mid-infrared wavelengths versus near-infrared wavelengths for these ultra-short pulses.

Chip-based Brillouin radio frequency photonic phase shifter and wideband time delay

We report a chip-based true-time-delay unit based on stimulated Brillouin scattering that uses an on-off Brillouin gain of 52 dB to enable 4 ns delay over a bandwidth of 100 MHz and a phase shift of ∼200°. To verify these operations, we use a two-tap microwave filter configuration and observed changes in the free spectral range of the filter and shift in the spectrum of the filter. The realization of these functionalities on chip-scale devices is critical for phased-array antennas, multibeam satellites, delay lines, arbitrary waveform generation, and reconfigurable microwave photonic filters.

Low loss SiGe waveguides in the MID-IR

In this work, we present the first experimental report validating the potential offered by SiGe/Si waveguides in the mid-IR with record low propagation loss over a wide bandwidth, which range between 1.5 dB/cm @3.25 μm down to 0.5 dB/cm @ 4.75 μm.

Chalcogenide glass planar MIR couplers for future chip based Bracewell interferometers

Photonic integrated circuits are established as the technique of choice for a number of astronomical processing functions due to their compactness, high level of integration, low losses, and stability. Temperature control, mechanical vibration and acoustic noise become controllable for such a device enabling much more complex processing than can realistically be considered with bulk optics. To date the benefits have mainly been at wavelengths around 1550 nm but in the important Mid-Infrared region, standard photonic chips absorb light strongly. Chalcogenide glasses are well known for their transparency to beyond 10000 nm, and the first results from coupler devices intended for use in an interferometric nuller for exoplanetary observation in the Mid-Infrared L’ band (3800-4200 nm) are presented here showing that suitable performance can be obtained both theoretically and experimentally for the first fabricated devices operating at 4000 nm.

Highly localized distributed Brillouin scattering response in a photonic integrated circuit

The interaction of optical and acoustic waves via stimulated Brillouin scattering (SBS) has recently reached on-chip platforms, which has opened new fields of applications ranging from integrated microwave photonics and on-chip narrow-linewidth lasers, to phonon-based optical delay and signal processing schemes. Since SBS is an effect that scales exponentially with interaction length, on-chip implementation on a short length scale is challenging, requiring carefully designed waveguides with optimized opto-acoustic overlap. In this work, we use the principle of Brillouin optical correlation domain analysis to locally measure the SBS spectrum with high spatial resolution of 800 μm and perform a distributed measurement of the Brillouin spectrum along a spiral waveguide in a photonic integrated circuit. This approach gives access to local opto-acoustic properties of the waveguides, including the Brillouin frequency shift and linewidth, essential information for the further development of high quality photonic-phononic waveguides for SBS applications.The interaction of optical and acoustic waves via stimulated Brillouin scattering (SBS) has recently reached on-chip platforms, which has opened new fields of applications ranging from integrated microwave photonics and on-chip narrow-linewidth lasers, to phonon-based optical delay and signal processing schemes. Since SBS is an effect that scales exponentially with interaction length, on-chip implementation on a short length scale is challenging, requiring carefully designed waveguides with optimized opto-acoustic overlap. In this work, we use the principle of Brillouin optical correlation domain analysis to locally measure the SBS spectrum with high spatial resolution of 800 μm and perform a distributed measurement of the Brillouin spectrum along a spiral waveguide in a photonic integrated circuit. This approach gives access to local opto-acoustic properties of the waveguides, including the Brillouin frequency shift and linewidth, essential information for the further development of high quality photonic...

High-resolution, on-chip RF photonic signal processor using Brillouin gain shaping and RF interference

Integrated microwave photonics has strongly emerged as a next-generation technology to address limitations of conventional RF electronics for wireless communications. High-resolution RF signal processing still remains a challenge due to limitations in technology that offer sub-GHz spectral resolution, in particular at high carrier frequencies. In this paper, we present an on-chip high-resolution RF signal processor, capable of providing high-suppression spectral filtering, large phase shifts and ns-scale time delays. This was achieved through tailoring of the Brillouin gain profiles using Stokes and anti-Stokes resonances combined with RF interferometry on a low-loss photonic chip with strong opto-acoustic interactions. Using an optical power of <40 mW, reconfigurable filters with a bandwidth of ~20 MHz and an extinction ratio in excess of 30 dB are synthesized. Through the concept of vector addition of RF signals we demonstrate, almost an order of magnitude amplification in the phase and delay compared to devices purely based upon the slow-light effect of Brillouin scattering. This concept allows for versatile and power-efficient manipulation of the amplitude and phase of RF signals on a photonic chip for applications in wireless communications including software defined radios and beam forming.