Panagiotis Korelis

Melting artificial spin ice

Artificial spin ice arrays of micromagnetic islands are a means of engineering additional energy scales and frustration into magnetic materials. Here we demonstrate a magnetic phase transition in an artificial square spin ice and use the symmetry of the lattice to verify the presence of excitations far below the ordering temperature. We do this by measuring the temperature-dependent magnetization in different principal directions and comparing it with simulations of idealized statistical mechanical models. Our results confirm a dynamical pre-melting of the artificial spin ice structure at a temperature well below the intrinsic ordering temperature of the island material. We thus create a spin ice array that has the real thermal dynamics of artificial spins over an extended temperature range.

Imprinting layer specific magnetic anisotropies in amorphous multilayers

We demonstrate how layer specific in-plane magnetic anisotropy can be imprinted in amorphous multilayers. The anisotropy is obtained by growing the magnetic layers in the presence of an external field and the anisotropy direction can thereby be arbitrarily chosen for each of the magnetic layers. We used Co68Fe24Zr8 and Al70Zr30 layers as building blocks for demonstrating this effect. The imprinting is expected to be obtainable for a wide range of amorphous materials when grown at temperatures below the magnetic ordering temperature.

Thermal transitions in nano-patterned XY-magnets

We have fabricated ultra-thin disc shaped islands wherein shape anisotropy confines the moment to the island plane, creating XY-like superspins. At low temperatures, the superspins are blocked, and, as the temperature is increased, they undergo a transition into a superparamagnetic state. The onset of this dynamic superspin state scales with the diameter of the islands, and it persists up to a temperature governed by the intrinsic ordering temperature of the island material defining a range in temperature in which dynamic behavior of the magnetic islands can be obtained.

Combined light and electron scattering for exploring hydrogen in thin metallic films

We present a method, combining optical transmission with electrical resistance, to study the hydrogen uptake in thin transition metal films. The change in optical transmission is used to determine the hydrogen concentration, while the change in resistance serves as an indicator for the ordering of hydrogen. We identify phase boundaries and regions of high and low orders as well as changes in the ordering temperature. As a demonstration of this approach we compare the hydrogen uptake of 50 and 10 nm single-crystal vanadium films. The ordered phase is found to be extended to higher temperatures in the thinner sample.

Correlation between iron self-diffusion and thermal stability in doped iron nitride thin films

Nanocrystalline Fe-X-N thin films (with doping X = 0, 3.1 at. % Al, 1.6 at. % Zr), were deposited using reactive ion beam sputtering. Magnetization study reveals that the deposited films exhibit a perpendicular magnetic anisotropy. Thermal stability of the films was investigated systematically and it was observed that the structural and the magnetic stability gets significantly enhanced with Al doping, whereas Zr doping has only a marginal effect. Fe self-diffusion, obtained using polarized neutron reflectivity, shows a suppression with both additives. A correlation between the thermal stability and the diffusion process gives a direct evidence that the enhancement in the thermal stability is primarily diffusion controlled. A combined picture of diffusion, structural, and magnetic stability has been drawn to understand the obtained results.

Exotic exchange bias at epitaxial ferroelectric-ferromagnetic interfaces

Multiferroics in spintronics have opened up opportunities for future technological developments, particularly in the field of ferroelectric (FE)-ferromagnetic (FM) oxide interfaces with functionalities. We find strong exchange bias shifts (up to 84 Oe) upon field cooling in metal-oxide (Fe/BaTiO3) films combining FM and FE layers. The saturation magnetic moment of the FM layer is also significantly higher than in bulk (3.0 ± 0.2 μB/atom) and the reversal mechanism occurs via a domain nucleation process. X-ray absorption spectroscopy at the Fe K-edge and Ba L3-edge indicate presence of few monolayers of antiferromagnetic FeO at the interface without the formation of any BaFeO3 layer. Polarized neutron reflectometry corroborates with our magnetization data as we perform depth profiling of the magnetic and structural densities in these bilayers. Our first principles density functional calculations support the formation of antiferromagnetic FeO layers at the interface along with an enhancement of Fe magnetic ...

Hydrogen distribution in Nb/Ta superlattices

The distribution of hydrogen in Nb/Ta superlattices has been investigated by combined neutron reflectivity and x-ray scattering. We provide evidence to support that strain modulations determined with x-ray diffraction can be interpreted as modulations in hydrogen content. We show that the hydrogen concentration is modulated and favors Nb, in agreement with previous studies. We measure the concentration directly using neutron reflectivity and demonstrate no detectable change in the distribution of hydrogen with temperature, in stark contrast to previous studies.

In situ Polarized Neutron Reflectometry: Epitaxial Thin-Film Growth of Fe on Cu(001) by dc Magnetron Sputtering

The step-wise growth of epitaxial Fe on Cu(001)/Si(001), investigated by in-situ polarized neutron reflectometry is presented. A sputter deposition system was integrated into the neutron reflectometer AMOR at the Swiss neutron spallation source SINQ, which enables the analysis of the microstructure and magnetic moments during all deposition steps of the Fe layer. We report on the progressive evolution of the accessible parameters describing the microstructure and the magnetic properties of the Fe film, which reproduce known features and extend our knowledge on the behavior of ultrathin iron films.

Temperature dependence of the electrical resistivity and electronic structure of amorphous Fe100−xZrx films and multilayers

The electrical resistivity of amorphous Fe(100-x)Zr(x) metal alloy films and multilayers has been investigated in a wide temperature and composition range. The overall behavior of the resistivity is consistent with bulk measurements, exhibiting prominent semiconductor-like changes at low temperatures. The transition from positive (metallic) to negative temperature coefficient of resistivity behavior is accompanied by minute changes in magnetoresistance and we can therefore rule out magnetic phase changes as being the cause for the observed changes in the resistivity. Using x-ray absorption and emission spectroscopies we are able to probe the unoccupied and occupied electronic densities of states. The corresponding spectra are found to significantly overlap, as expected for a metallic-like electronic structure and the absence of a band gap. Besides a broadening of the x-ray emission lines expected from an amorphous material, remarkably small differences are observed in the electronic structures when changing the amount of Zr. The resistivity data were modeled and agreement with the Mott variable range hopping model was found, indicating localized electronic states due the disordered structure of the Fe(100-x)Zr(x) alloys.

Atomic and electronic structure of amorphous Al–Zr alloy films

Amorphous Al(73)Zr(27) alloy film, grown and then subjected to heat treatments at 400 and 700 °C, was studied using a combination of x-ray diffraction and soft x-ray spectroscopic techniques. The Al L(2,3) and Al K x-ray absorption spectroscopy (XAS) and Al L(2,3) x-ray emission spectroscopy (XES) used allowed probing the unoccupied and occupied Al 3s, d states and unoccupied Al 3p states in the sample studied. An irreversible transition from amorphous alloy to a mixture of polycrystalline alloy and amorphous alloy, and then to an amorphous oxide phase was observed. After the annealing at 400 °C the Al L(2,3) spectra obtained by XAS could be explained as sums of spectra from amorphous Al(73)Zr(27) alloy and (poly)crystalline Al. This indicates that the sample consists of a mixture of Al-rich crystalline and Zr-enhanced amorphous alloys, as compared to the stoichiometry of the as-deposited Al(73)Zr(27) sample, and that the electronic wavefunctions in the crystalline and amorphous regions can be considered to be confined within the respective regions. The relative amounts of Al atoms were found to be around 1:3 in the crystalline and amorphous phases, respectively, as deduced from the analysis of changes in the electronic structure using Al L(2,3) XAS data. The interpretation was confirmed by the Al K XAS and Al L(2,3) XES. Upon further annealing at 700 °C the polycrystalline phase transformed into amorphous oxide, while the amorphous alloy phase underwent gradual oxidation. The important finding was that the greater part of the sample remained in the amorphous state throughout the temperature regimes described.