Paola De Padova

Evidence of graphene-like electronic signature in silicene nanoribbons

We report on the electronic properties of straight, 1.6 nm wide, silicene nanoribbons on Ag(110), arranged in a one-dimensional grating with a pitch of 2 nm, whose high-resolution scanning tunneling microscopy images reveal a honeycomb geometry. Angle-resolved photoemission shows quantum confined electronic states of one-dimensional character. The silicon band dispersion along the direction of the nanoribbons suggests a behavior analogous to the Dirac cones of graphene on different substrates.

sp2-like hybridization of silicon valence orbitals in silicene nanoribbons

Silicene nanoribbons grown on a silver (110) substrate have been studied by reflection electron energy loss spectroscopy as a function of the electron beam incidence angle α. The spectra, taken at the Si K absorption edge (1.840 keV), reveal the presence of two distinct loss structures attributed to transitions 1s→π∗ and 1s→σ∗, according to their intensity dependence on α. Such behavior, when compared to graphite, attests the sp2-like hybridization of the silicon valence orbitals in the silicene nanoribbons as is, indeed, for carbon atomic bonds of graphene.

Evidence of Dirac fermions in multilayer silicene

Multilayer silicene, the silicon analogue of multilayer graphene, grown on silver (111) surfaces, possesses a honeycomb (√3 × √3)R30° reconstruction, observed by scanning tunnelling microscopy at room temperature, past the initial formation of the dominant, 3×3 reconstructed, silicene monolayer. For a few layers silicene film we measure by synchrotron radiation photoelectron spectroscopy, a cone-like dispersion at the Brillouin zone centre due to band folding. π* and π states meet at ∼0.25 eV below the Fermi level, providing clear evidence of the presence of gapless Dirac fermions.

Multilayer Silicene Nanoribbons

The synthesis of silicene, graphene-like silicon, has generated very strong interest. Here, we reveal the growth of high aspect ratio, perfectly straight, and aligned silicon nanoribbons, exhibiting pyramidal cross section. They are multistacks of silicene and show in angle-resolved photoemission cone-like dispersion of their π and π* bands, at the X[overline] point of their one-dimensional Brillouin zone, with Fermi velocity of ~1.3 × 10(6) m sec(-1), which is very promising for potential applications.

1D graphene-like silicon systems: silicene nano-ribbons

Through this review we can follow the various phases that have led to the discovery of the new allotrope form of silicon: silicene. This is a one-atom thick silicon sheet arranged in a honeycomb lattice, similar to graphene. For silicon, which usually is sp3 hybridized, it represents an unusual and rare structure. First, silicene was theoretically hypothesized and subsequently its structure calculated as a possible candidate for nano-ribbons of Si grown on the anisotropic Ag(110) surface. It was only later, when the physical and chemical properties of this peculiar form of silicon, demonstrating the presence of π and π* bands giving the so-called Dirac cones at the K corners of the Brillouin zone, the sp2-like nature of the valence orbitals of the Si-Si bonds and its strong resistance towards oxygen were reported, that the real existence of silicene became recognized in the scientific community. This review is essentially focused on the experimental work performed on 1D isolated silicene nano-ribbons and their 1D dense array grown on Ag(110) surfaces.

24 h stability of thick multilayer silicene in air

Thick epitaxial multilayer silicene films with a root 3 x root 3R(30 degrees) surface structure show only mild surface oxidation after 24 h in air, as measured by Auger electron spectroscopy. X-ray diffraction and Raman spectroscopy measurements performed in air without any protective capping, as well as, for comparison, with a thin Al2O3 cap, showed the (002) reflection and the G, D and 2D Raman structures, which are unique fingerprints of thick multilayer silicene.

Strong resistance of silicene nanoribbons towards oxidation

Silicene, the new allotropic form of silicon, represents an interesting promise for future new nanostructured materials. Here, we investigate the room temperature oxidation of a one-dimensional grating of silicene nanoribbons grown on a Ag(1?1?0) surface by high-resolution Si 2p core level photoemission spectroscopy and low-energy electron diffraction observations. The oxidation process starts at very high oxygen exposures, about 104 times higher than on the clean Si(1?1?1)7 ? 7 surface, which demonstrates the low reactivity of silicene to molecular oxygen. Ar+sputtering produces defects, which enhance the oxidation uptake.

Burning match oxidation process of silicon nanowires screened at the atomic scale

Silicon oxide nanowires hold great promise for functional nanoscale electronics. Here, we investigate the oxidation of straight, massively parallel, metallic Si nanowires. We show that the oxidation process starts at the Si NW terminations and develops like a burning match. While the spectroscopic signatures on the virgin, metallic part, are unaltered we identify four new oxidation states on the oxidized part, which show a gap opening, thus revealing the formation of a transverse internal nanojunction.

The fate of the 2√3 × 2√3R(30°) silicene phase on Ag(111)

Silicon atoms deposited on Ag(111) produce various single layer silicene sheets with different buckling patterns and periodicities. Low temperature scanning tunneling microscopy reveals that one of the silicene sheets, the hypothetical √7 × √7 silicene structure, on 2√3 × 2√3 Ag(111), is inherently highly defective and displays no long-range order. Moreover, Auger and photoelectron spectroscopy measurements reveal its sudden death, to end, in a dynamic fating process at ∼300 °C. This result clarifies the real nature of the 2√3 × 2√3R(30°) silicene phase and thus helps to understand the diversity of the silicene sheets grown on Ag(111).

Multilayer silicene: clear evidence

One year after the publication of the seminal paper on monolayer 3 by 3 reconstructed silicene grown on a silver (111) substrate, evidence of the synthesis of epitaxial root3 by root3 reconstructed multilayer silicene hosting Dirac fermions was presented. Although a general consensus was immediately reached in the former case, in the latter one, the mere existence of multilayer silicene was questioned and strongly debated. Here, we demonstrate by means of a comprehensive x-ray crystallographic study, that multilayer silicene is effectively realized upon growth at rather low growth temperatures (~200{\deg}C), while, instead, 3D growth of silicon crystallites takes place at higher temperatures, (~300{\deg}C). This transition to bulk like silicon perfectly explains the various data presented and discussed in the literature and solves their conflicting interpretations.