Pascal Friederich

QM/QM Approach to Model Energy Disorder in Amorphous Organic Semiconductors

It is an outstanding challenge to model the electronic properties of organic amorphous materials utilized in organic electronics. Computation of the charge carrier mobility is a challenging problem as it requires integration of morphological and electronic degrees of freedom in a coherent methodology and depends strongly on the distribution of polaron energies in the system. Here we represent a QM/QM model to compute the polaron energies combining density functional methods for molecules in the vicinity of the polaron with computationally efficient density functional based tight binding methods in the rest of the environment. For seven widely used amorphous organic semiconductor materials, we show that the calculations are accelerated up to 1 order of magnitude without any loss in accuracy. Considering that the quantum chemical step is the efficiency bottleneck of a workflow to model the carrier mobility, these results are an important step toward accurate and efficient disordered organic semiconductors simulations, a prerequisite for accelerated materials screening and consequent component optimization in the organic electronics industry.

Superexchange Charge Transport in Loaded Metal Organic Frameworks

In the past, nanoporous metal-organic frameworks (MOFs) have been mostly studied for their huge potential with regard to gas storage and separation. More recently, the discovery that the electrical conductivity of a widely studied, highly insulating MOF, HKUST-1, improves dramatically when loaded with guest molecules has triggered a huge interest in the charge carrier transport properties of MOFs. The observed high conductivity, however, is difficult to reconcile with conventional transport mechanisms: neither simple hopping nor band transport models are consistent with the available experimental data. Here, we combine theoretical results and new experimental data to demonstrate that the observed conductivity can be explained by an extended hopping transport model including virtual hops through localized MOF states or molecular superexchange. Predictions of this model agree well with precise conductivity measurements, where experimental artifacts and the influence of defects are largely avoided by using well-defined samples and the Hg-drop junction approach.

Ultrarobust Thin-Film Devices from Self-Assembled Metal-Terpyridine Oligomers

Ultrathin molecular layers of Fe(II) -terpyridine oligomers allow the fabrication of large-area crossbar junctions by conventional electrode vapor deposition. The junctions are electrically stable for over 2.5 years and operate over a wide range of temperatures (150-360 K) and voltages (±3 V) due to the high cohesive energy and packing density of the oligomer layer. Electrical measurements reveal ideal Richardson-Shottky emission in surprising agreement with electrochemical, optical, and photoemission data.

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing

A printed vertical field-effect transistor is demonstrated, which decouples critical device dimensions from printing resolution. A printed mesoporous semiconductor layer, sandwiched between vertically stacked drive electrodes, provides <50 nm channel lengths. A polymer-electrolyte-based gate insulator infiltrates the percolating pores of the mesoporous channel to accumulate charge carriers at every semiconductor domain, thereby, resulting in an unprecedented current density of MA cm-2 .

Rational In Silico Design of an Organic Semiconductor with Improved Electron Mobility

Organic semiconductors find a wide range of applications, such as in organic light emitting diodes, organic solar cells, and organic field effect transistors. One of their most striking disadvantages in comparison to crystalline inorganic semiconductors is their low charge-carrier mobility, which manifests itself in major device constraints such as limited photoactive layer thicknesses. Trial-and-error attempts to increase charge-carrier mobility are impeded by the complex interplay of the molecular and electronic structure of the material with its morphology. Here, the viability of a multiscale simulation approach to rationally design materials with improved electron mobility is demonstrated. Starting from one of the most widely used electron conducting materials (Alq3 ), novel organic semiconductors with tailored electronic properties are designed for which an improvement of the electron mobility by three orders of magnitude is predicted and experimentally confirmed.

p-Doping of polystyrene polymers with attached functional side-groups from solution

Electrically doped buffer layers are often employed in organic optoelectronic devices to improve charge carrier injection or extraction. We study p-doping of non-conjugated polymers with attached hole transport moieties by intermixing strong molecular acceptors. Polymers and dopants are processed from solution and their electrical properties are benchmarked against non-polymerized, p-doped molecular materials. The equilibrium charge carrier density is estimated by electron paramagnetic resonance (EPR) measurements that show an increased number of unpaired spins upon doping. We find an increase in the conductivity of the electrically doped polymer and the corresponding molecular materials by several orders of magnitude by studying hole-only devices and employing charge extraction by linearly increasing voltage (CELIV). Altogether, the increased number of unpaired spins and the enhanced conductivity indicate the presence of free holes. The p-doping of the polymers with attached hole transport moieties is equally efficient as the p-doping of the corresponding molecular materials.

Ab initio modeling of steady-state and time-dependent charge transport in hole-only α-NPD devices

We present an ab initio modeling study of steady-state and time-dependent charge transport in hole-only devices of the amorphous molecular semiconductor α–NPD [N,N′-Di(1–naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine]. The study is based on the microscopic information obtained from atomistic simulations of the morphology and density functional theory calculations of the molecular hole energies, reorganization energies, and transfer integrals. Using stochastic approaches, the microscopic information obtained in simulation boxes at a length scale of ∼10 nm is expanded and employed in one-dimensional (1D) and three-dimensional (3D) master-equation modeling of the charge transport at the device scale of ∼100 nm. Without any fit parameter, predicted current density-voltage and impedance spectroscopy data obtained with the 3D modeling are in very good agreement with measured data on devices with different α-NPD layer thicknesses in a wide range of temperatures, bias voltages, and frequencies. Similarly go...

Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation

Summary We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olate)aluminium(III) (Al(Op)3) both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op)3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op)3 into organic thin film transistors (TFTs) was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons) suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.

Machine learning of correlated dihedral potentials for atomistic molecular force fields

Computer simulation increasingly complements experimental efforts to describe nanoscale structure formation. Molecular mechanics simulations and related computational methods fundamentally rely on the accuracy of classical atomistic force fields for the evaluation of inter- and intramolecular energies. One indispensable component of such force fields, in particular for large organic molecules, is the accuracy of molecule-specific dihedral potentials which are the key determinants of molecular flexibility. We show in this work that non-local correlations of dihedral potentials play a decisive role in the description of the total molecular energy—an effect which is neglected in most state-of-the-art dihedral force fields. We furthermore present an efficient machine learning approach to compute intramolecular conformational energies. We demonstrate with the example of α-NPD, a molecule frequently used in organic electronics, that this approach outperforms traditional force fields by decreasing the mean absolute deviations by one order of magnitude to values smaller than 0.37 kcal/mol (16.0 meV) per dihedral angle.

Built-in potentials induced by molecular order in amorphous organic thin films

Many molecules used to fabricate organic semiconductor devices carry an intrinsic dipole moment. Anisotropic orientation of such molecules in amorphous organic thin films during the deposition process can lead to the spontaneous buildup of an electrostatic potential perpendicular to the film. This so-called giant surface potential (GSP) effect can be exploited in organic electronics applications and was extensively studied in experiment. However, presently, an understanding of the molecular mechanism driving the orientation is lacking. Here, we model the physical vapor deposition process of seven small organic molecules employed in organic light-emitting diode applications with atomistic simulations. We are able to reproduce experimental results for a wide range of strength of the GSP effect. We find that the electrostatic interaction between the dipole moments of the molecules limits the GSP strength and identify short-range van der Waals interactions between the molecule and the surface during deposition as the driving force behind the anisotropic orientation. We furthermore show how the GSP effect influences the energy levels responsible for charge transport, which is important for the design of organic semiconductors and devices.