Patrik G. Karlsson

Using “Tender” X-ray Ambient Pressure X-Ray Photoelectron Spectroscopy as A Direct Probe of Solid-Liquid Interface

We report a new method to probe the solid-liquid interface through the use of a thin liquid layer on a solid surface. An ambient pressure XPS (AP-XPS) endstation that is capable of detecting high kinetic energy photoelectrons (7 keV) at a pressure up to 110 Torr has been constructed and commissioned. Additionally, we have deployed a “dip & pull” method to create a stable nanometers-thick aqueous electrolyte on platinum working electrode surface. Combining the newly constructed AP-XPS system, “dip & pull” approach, with a “tender” X-ray synchrotron source (2 keV–7 keV), we are able to access the interface between liquid and solid dense phases with photoelectrons and directly probe important phenomena occurring at the narrow solid-liquid interface region in an electrochemical system. Using this approach, we have performed electrochemical oxidation of the Pt electrode at an oxygen evolution reaction (OER) potential. Under this potential, we observe the formation of both Pt2+ and Pt4+ interfacial species on the Pt working electrode in situ. We believe this thin-film approach and the use of “tender” AP-XPS highlighted in this study is an innovative new approach to probe this key solid-liquid interface region of electrochemistry.

Structural study of adsorption of isonicotinic acid and related molecules on rutile TiO2(110) I: XAS and STM

The adsorption of monolayers of the pyridine-carboxylic acid monomers (isonicotinic acid, nicotinic acid, and picolinic acid) on rutile TiO2(1 1 0) has been studied by means of X-ray photoemission spectroscopy. An investigation of the O 1s spectra shows that the molecular carboxylic groups are deprotonated and, hence, that the molecules bind to the surface in a bidentate mode. Moreover, the binding energy of those core levels that are related to the pyridine ring atoms shift as a function of molecule relative to the substrate O 1s and Ti 3p levels, while the position of the core levels related to emission from the carboxylic group are constant relative to the substrate levels. The molecule-dependent shifts are attributed to local intermolecular interactions that determine the proximity of adjacent molecular rings and thus the core-hole screening response of the neighbouring molecules. We propose a simple molecular arrangement for each case which satisfies the known constraints

Metalorganic chemical vapor deposition of anatase titanium dioxide on Si: Modifying the interface by pre-oxidation

Metalorganic chemical vapor deposition of anatase titanium dioxide on Si: Modifying the interface by pre-oxidation

Growth of ultrathin ZrO2 films on Si(100): Film-thickness-dependent band alignment

The band alignment of ultrathin ZrO2 films of different thickness formed on Si(100) have been monitored with synchrotron radiation photoelectron spectroscopy and x-ray absorption spectroscopy. The films were deposited sequentially by way of metal-organic chemical-vapor deposition in ultrahigh vacuum. A significant decrease in the conduction band offset is found for increasing film thickness. It is accompanied by a corresponding increase of the valence band offset. The variations originate in the formation of an interfacial layer characterized by a lower degree of Zr-O interaction than in bulk ZrO2 but with no clear evidence for partially occupied Zr4d dangling bonds.

A versatile photoelectron spectrometer for pressures up to 30 mbar

High-pressure photoelectron spectroscopy is a rapidly developing technique with applications in a wide range of fields ranging from fundamental surface science and catalysis to energy materials, environmental science, and biology. At present the majority of the high-pressure photoelectron spectrometers are situated at synchrotron end stations, but recently a small number of laboratory-based setups have also emerged. In this paper we discuss the design and performance of a new laboratory based high pressure photoelectron spectrometer equipped with an Al Kα X-ray anode and a hemispherical electron energy analyzer combined with a differentially pumped electrostatic lens. The instrument is demonstrated to be capable of measuring core level spectra at pressures up to 30 mbar. Moreover, valence band spectra of a silver sample as well as a carbon-coated surface (graphene) recorded under a 2 mbar nitrogen atmosphere are presented, demonstrating the versatility of this laboratory-based spectrometer.

Interface electronic states and molecular structure of a triarylamine based hole conductor on rutile TiO2(110).

The molecular and electronic surface structure of a triarylamine based hole-conductor (HC) molecule evaporated onto rutile TiO2(110) single crystal is investigated by means of synchrotron light based photoelectron spectroscopy and x-ray absorption spectroscopy in combination with calculations based on density functional theory. Different amounts of the HC molecule was evaporated spanning the monolayer to multilayer region. The molecular surface structure is investigated and the results indicate that no specific covalent chemical bonding is formed and that the plane formed by the different nitrogens in the HC molecules has a rather small angle versus the TiO2 substrate surface plane. Some molecular ordering also persists in the multilayer region. The experimental core level spectra, valence level spectra, and the N 1s x-ray absorption spectroscopy spectra are well modeled by calculations on an individual molecule. Interestingly, the formation of the TiO2HC interface results in significant binding energy shifts in core levels and valence levels shifting all peaks of a the HC material to the same extent. Smaller shifts were also observed in the substrate core level peaks. The shift is discussed in terms of nanoscale energy level bending and final state hole screening. With respect to electronic applications, specifically in a solid state dye-sensitized solar cell, it is argued that the observed energy level alignment at the TiO2HC interface can act as a hole trap.

A novel method for automatic genotyping of microsatellite markers based on parametric pattern recognition

Genetic mapping of loci affecting complex phenotypes in human and other organisms is presently being conducted on a very large scale, using either microsatellite or single nucleotide polymorphism (SNP) markers and by partly automated methods. A critical step in this process is the conversion of the instrument output into genotypes, both a time-consuming and error prone procedure. Errors made during this calling of genotypes will dramatically reduce the ability to map the location of loci underlying a phenotype. Accurate methods for automatic genotype calling are therefore important. Here, we describe novel algorithms for automatic calling of microsatellite genotypes using parametric pattern recognition. The analysis of microsatellite data is complicated both by the occurrence of stutter bands, which arise from Taq polymerase misreading the number of repeats, and additional bands derived form the non-template dependent addition of a nucleotide to the 3′ end of the PCR products. These problems, together with the fact that the lengths of two alleles in a heterozygous individual may differ by only two nucleotides, complicate the development of an automated process. The novel algorithms markedly reduce the need for manual editing and the frequency of miscalls, and compares very favourably with commercially available software for automatic microsatellite genotyping.

Electronic structure of a laterally graded ZrO2–TiO2 film on Si(100) prepared by metal-organic chemical vapor deposition in ultrahigh vacuum

A TiO2-ZrO2 film with laterally graded stoichiometry has been prepared by metal-organic chemical vapor deposition in ultrahigh vacuum. The film was characterized in situ using synchrotron radiation ...

Band alignment at the ZrO2/Si(100) interface studied by photoelectron and x-ray absorption spectroscopy

We present measurements of the Zr and Si core level photoelectron binding energies relative to the Fermi level and the vacuum level under a ZrO2 growth series on Si(100). It is shown that the Zr core level binding energy is most properly referenced to the local vacuum level already from the monolayer regime. This confirms the insulating properties of ZrO2. The Si core levels are referenced to the Fermi level and undergo shifts consistent with the disappearance of the mid-band-gap states originating from the (2×1) reconstruction on the clean Si(100) surface. The use of O 1s x-ray absorption spectroscopy (XAS) to determine the location of the conduction band edge of ZrO2 is discussed with the aid of ab initio calculations. It is demonstrated that the conduction band edge is located at the XAS peak position and that the position relative to the valence band can be determined by aligning the O 1s XAS spectrum to the O 1s photoelectron spectrum. The study thus establishes that photoelectron spectroscopy in con...