Patryk Florczak

The impact of adsorption on the localization of spins in graphene oxide and reduced graphene oxide, observed with electron paramagnetic resonance

We report the observations of electronic properties of graphene oxide and reduced graphene oxide, performed with electron paramagnetic resonance technique in a broad temperature range. Both materials were examined in pure form and saturated with air, helium, and heavy water molecules. We show that spin localization strongly depends on the type and amount of molecules adsorbed at the graphene layer edges (and possible in-plane defects). Physical and chemical states of edges play crucial role in electrical transport within graphene-based materials, with hopping as the leading mechanism of charge carrier transport. Presented results are a good basis to understand the electronic properties of other carbon structures made of graphene-like building blocks. Most active carbons show some degree of functionalization and are known of having good adsorptive properties; thus, controlling both phenomena is important for many applications. Sample treatment with temperature, vacuum, and various adsorbents allowed for th...

Graphene material prepared by thermal reduction of the electrochemically synthesized graphite oxide

In the present work we demonstrate a simple and effective way to produce bulk quantities of graphene material. For the first time, graphite oxide (GO), synthesized by electrochemical treatment of natural graphite in HClO4 aqueous solution, was used to obtain thermally exfoliated-reduced graphite oxide (TRGO). Herein, GO was thermally exfoliated and reduced at 500 °C in air, giving the final product of TRGO. Due to shock treatment, the volume of the synthesized TRGO drastically increased compared to the starting GO. Furthermore, the exfoliation process resulted in a significant decrease in the concentration of oxygen functionalities. The choice of GO exfoliation temperature was preceded by thermogravimetric analysis (TGA). TRGO was characterized using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM) analysis.