Paul C. Lemaire

Facile Conversion of Hydroxy Double Salts to Metal–Organic Frameworks Using Metal Oxide Particles and Atomic Layer Deposition Thin-Film Templates

Rapid room-temperature synthesis of metal-organic frameworks (MOFs) is highly desired for industrial implementation and commercialization. Here we find that a (Zn,Cu) hydroxy double salt (HDS) intermediate formed in situ from ZnO particles or thin films enables rapid growth (<1 min) of HKUST-1 (Cu3(BTC)2) at room temperature. The space-time-yield reaches >3 × 10(4) kg·m(-3)·d(-1), at least 1 order of magnitude greater than any prior report. The high anion exchange rate of (Zn,Cu) hydroxy nitrate HDS drives the ultrafast MOF formation. Similarly, we obtained Cu-BDC, ZIF-8, and IRMOF-3 structures from HDSs, demonstrating synthetic generality. Using ZnO thin films deposited via atomic layer deposition, MOF patterns are obtained on pre-patterned surfaces, and dense HKUST-1 coatings are grown onto various form factors, including polymer spheres, silicon wafers, and fibers. Breakthrough tests show that the MOF-functionalized fibers have high adsorption capacity for toxic gases. This rapid synthesis route is also promising for new MOF-based composite materials and applications.

Conformal and highly adsorptive metal–organic framework thin films via layer-by-layer growth on ALD-coated fiber mats

Integration of metal–organic frameworks (MOFs) on textiles shows promise for enabling facile deployment and expanding MOF applications. While MOFs deposited on flat substrates can show relatively smooth surface texture, most previous reports of MOFs integrated on fibers show poor conformality with many individual crystal domains. Here we report a new low-temperature (<70 °C) method to deposit uniform and smooth MOF thin films on fiber surfaces using an energy enhanced layer-by-layer (LbL) method with an ALD Al2O3 nucleation layer. Cross-sectional TEM images show a well-defined core@shell structure of the MOF-functionalized fiber, and SEM shows a flat MOF surface texture. We analyze the thickness and mass increase data of LbL HKUST-1 MOF thin films on ALD-coated polypropylene fibers and find the growth rate to be 288–290 ng cm−2 per LbL cycle. Unlike planar LbL MOF embodiments where adsorption capacities are difficult to quantify, the large volume quantity on a typical fiber mat enables accurate surface area measurement of these unique MOF morphologies. After 40 LbL cycles the MOFs on fibers exhibit N2 adsorption BET surface areas of up to 93.6 m2 gMOF+fiber−1 (∼535 m2 gMOF−1) and breakthrough test results reveal high dynamic loadings for NH3 (1.37 molNH3 kgMOF+fiber−1) and H2S (1.49 molH2S kgMOF+fiber−1). This synthesis route is applicable to many polymer fibers, and the fiber@ALD@MOF structure is promising for gas filtration, membrane separation, catalysis, chemical sensing and other applications.

Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition

Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

Platinum-free cathode for dye-sensitized solar cells using poly(3,4-ethylenedioxythiophene) (PEDOT) formed via oxidative molecular layer deposition.

Thin ∼ 20 nm conformal poly(3,4-ehylenedioxythiophene) (PEDOT) films are incorporated in highly conductive mesoporous indium tin oxide (m-ITO) by oxidative molecular layer deposition (oMLD). These three-dimensional catalytic/conductive networks are successfully employed as Pt-free cathodes for dye-sensitized solar cells (DSSCs) with open circuit voltage equivalent to Pt cathode devices. Thin and conformal PEDOT films on m-ITO by oMLD create high surface area and efficient electron transport paths to promote productive reduction reaction on the PEDOT film. Because of these two synergetic effects, PEDOT-coated m-ITO by oMLD shows power conversion efficiency, 7.18%, comparable to 7.26% of Pt, and higher than that of planar PEDOT coatings, which is 4.85%. Thus, PEDOT-coated m-ITO is an exceptional opportunity to compete with Pt catalysts for low-cost energy conversion devices.

Reversible Low-Temperature Metal Node Distortion during Atomic Layer Deposition of Al2O3 and TiO2 on UiO-66-NH2 Metal–Organic Framework Crystal Surfaces

Metal-organic frameworks (MOFs) are chemically functionalized micro- and mesoporous materials with high surface areas and are attractive for multiple applications including filtration, gas storage, and catalysis. Postsynthetic modification (PSM), via solution or vapor-based techniques, is a way to impart additional complexity and functionality into these materials. There is a desire to shift toward vapor-phase methods in order to ensure more controlled modification and more efficient reagent and solvent removal from the modified MOF material. In this work we explore how the metal precursors titanium tetrachloride (TiCl4) and trimethylaluminum (TMA), commonly used in atomic layer deposition, react with UiO-66-NH2 MOF. Using in situ quartz crystal microbalance (QCM) and Fourier transform infrared spectroscopy (FTIR) at 150 and 250 °C, we find that the ALD precursors react with μ3-OH hydroxyl and μ3-O bridging oxygen groups on Zr6 nodes, as well as oxygen from carboxylate linker groups. The reactions occur predominantly at the crystal surface at μ3-OH hydroxyl sites, with TiCl4 exhibiting greater diffusion into the MOF subsurface. FTIR analysis suggests that, at 150 °C, both TiCl4 and TMA reversibly dehydroxylate the hydroxylated UiO-66-NH2, which is accompanied by distortion of the zirconium metal clusters. Finally, we show that TiCl4 is able to react with the dehydroxylated UiO-66-NH2 structure, suggesting that TiCl4 is also able to react directly with the bridging oxygens in the metal clusters or carboxylate groups on the organic ligand. A better understanding of chemical and thermally driven MOF dehydroxylation reactions can be important for improved postsynthetic modification of MOFs.

Ab initio analysis of nucleation reactions during tungsten atomic layer deposition on Si(100) and W(110) substrates

Novel insight into the mechanisms that govern nucleation during tungsten atomic layer deposition is presented through a detailed analysis using density functional theory. Using the calculated energetics, the authors suggest the most probable series of reactions that lead to monolayer formation on desired growth surfaces, Si(100) and W(110), during sequential doses of WF 6 and SiH 4. From this analysis, they conclude that a relatively high-energy barrier exists for initial nucleation of WF 6 on a silicon substrate; therefore, the system is limited to physical adsorption and is only capable of accessing nucleation pathways once the reaction barrier is energetically accessible. During early doses of WF 6, the initial silicon surface acts as the reductant. Results from this half-reaction provide support for the noncoalesced growth of initial W layers since nucleation is shown to require a 2:1 ratio of silicon to WF 6. In addition, the release of H 2 is significantly favored over HF production leading to the formation of fluorine-contaminated silicon sites; etching of these sites is heavily supported by the absence of fluorine observed in experimentally deposited films as well as the high volatility of silicon-subfluorides. In the second half-reaction, SiH 4 plays the multipurpose role of stripping fluorine atoms from W, displacing any adsorbed hydrogen atoms, and depositing a silicon-hydride layer. Saturation of the previously formed W layer with silicon-hydrides is a crucial step in depositing the consecutive layer since these surface species act as the reductants in the succeeding dose of WF 6. The SiH 4 half-reaction reaches a limit when all fluorine atoms are removed as silicon-subfluorides (SiF xH y) and tungsten sites are terminated with silicon-hydrides. The WF 6 dose reaches a limit in early doses when the reductant, i.e., the surface, becomes blocked due to the formation of a planar network of fluorine-containing tungsten intermediates and in later cycles when the reductant, i.e., adsorbed silicon-hydrides, is etched entirely from the surface. Overall, the calculated energetics indicate that WF xH y, SiF x, and H 2 molecules are the most probable by-products released during the ALD process. Results from this work contribute significantly to the fundamental understanding of atomic layer growth of tungsten using silicon species as reducing agents and may be used as a template for analyzing novel ALD processes.

Thermally Driven Self-Limiting Atomic Layer Etching of Metallic Tungsten Using WF6 and O2

The semiconductor industry faces a tremendous challenge in the development of a transistor device with sub-10 nm complex features. Self-limiting atomic layer etching (ALE) is essential for enabling the manufacturing of complex transistor structures. In this study, we demonstrated a thermally driven ALE process for tungsten (W) using sequential exposures of O2 and WF6. Based on the insight gained from the previous study on TiO2 thermal ALE, we proposed that etching of W could proceed in two sequential reaction steps at 300 °C: (1) oxidation of metallic tungsten using O2 or O3 to form WO3(s) and (2) formation and removal of volatile WO2F2(g) during the reaction between WO3(s) and WF6(g). The O2/WF6 etch process was experimentally studied using a quartz crystal microbalance (QCM). We find that both the O2 and WF6 ALE half reactions are self-limiting, with an estimated steady-state etch rate of ∼6.3 Å/cycle at 300 °C. We also find that etching of W proceeds readily at 300 °C, but not at temperatures lower than 275 °C. Thermodynamic modeling reveals that the observed temperature dependence is likely due to the limited volatility of WO2F2. The use of WF6 with O3 in place of O2 also allows W etching, where the stronger oxidant leads to a larger mass removal rate per cycle. However, we find O2 to be more controllable for precise metal removal per cycle. In addition, etched W films were examined with ex situ analytical tools. Using spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM), we confirm etching of tungsten film on silicon substrates. Surface analysis by X-ray photoelectron spectroscopy (XPS) revealed a minimal fluorine content on the W film after partial etching and on the silicon surface after full etching. This suggests that W ALE does not significantly alter the chemical composition of W films. This work serves to increase the understanding of ALE reactions and expand the base of available ALE processes for advanced material processing.