Paul L. Voss

A 24 km fiber-based discretely signaled continuous variable quantum key distribution system.

We report a continuous variable key distribution system that achieves a final secure key rate of 3.45 kilobits/s over a distance of 24.2 km of optical fiber. The protocol uses discrete signaling and post-selection to improve reconciliation speed and quantifies security by means of quantum state tomography. Polarization multiplexing and a frequency translation scheme permit transmission of a continuous wave local oscillator and suppression of noise from guided acoustic wave Brillouin scattering by more than 27 dB.

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

Using elastic scattering theory we show that a small set of energy dispersive x-ray spectroscopy (EDX) measurements is sufficient to experimentally evaluate the scattering function of electrons in high-angle annular dark field scanning transmission microscopy (HAADF-STEM). We then demonstrate how to use this function to transform qualitative HAADF-STEM images of InGaN layers into precise, quantitative chemical maps of the indium composition. The maps obtained in this way combine the resolution of HAADF-STEM and the chemical precision of EDX. We illustrate the potential of such chemical maps by using them to investigate nanometer-scale fluctuations in the indium composition and their impact on the growth of epitaxial InGaN layers.

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

Highly reflective deep UV distributed Bragg reflectors (DBRs) based on the BAlN material system have been grown by metalorganic vapour phase epitaxy on AlN template substrates. These structures make use of the transparency of BAlN in the deep UV and the high refractive index contrast between BAlN and AlN, which has been demonstrated to exceed 0.27 at 280 nm. 18-pair BAlN/AlN DBRs showed experimental peak reflectivity of 82% at 311 nm and a stop-bandwidth of 20 nm. At 282 nm, a 24-pair BAlN/AlN DBR structure is demonstrated with experimental peak reflectivity of 60% and stop-bandwidth of 16 nm.

Full-band quantum-dynamical theory of saturation and four-wave mixing in graphene

The linear and nonlinear optical response of graphene are studied within a quantum-mechanical, full-band, steady-state density-matrix model. This nonpurtabative method predicts the saturatable absorption and saturable four-wave mixing of graphene. The model includes τ(1) and τ(2) time constants that denote carrier relaxation and quantum decoherence, respectively. Fits to existing experimental data yield τ(2) < 1 fs due to carrier-carrier scattering. τ(1) is found to be on the timescale from 250 fs to 550 fs, showing agreement with experimental data obtained by differential transmission measurements.

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects: a polarization-induced band discontinuity and a resistive barrier originating from excellent insulation properties of BGaN. Compared to conventional AlGaN/GaN HEMTs, structures grown with BGaN back-barrier showed a significant improvement of static performances, transport properties, and trapping effects involving a limited current collapse in dynamic regime. A DC maximum current increase of 58.7% was observed.

Model of Ni-63 battery with realistic PIN structure

GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-n structure under scanning electron microscope illumination.

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electrolumi...

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Uniform, dense, single-phase, 150 nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and nanoscale selective area growth on silicon dioxide patterned masks. The 150 nm thick InGaN nanorods have a perfect hexagonal pyramid shape with relatively homogenous indium concentration up to 22%, which is almost twice as high as in planar InGaN grown in the same condition, and luminesce at 535 nm. InGaN nanostripes feature c-axis oriented InGaN in the core which is covered by InGaN grown along semi-polar facets with higher In content. Transmission electron microscope and sub micron beam X-rays diffraction investigations confirm that both InGaN nanostructures are mostly defect free and monocrystalline. The ability to grow defect-free thick InGaN nanostructures with reduced polarization and high indium incorporation offers a solution to develop high efficiency InGaN-based solar cells.

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215 nm. A highly oriented two-dimensional h-BN structure was formed at the film/sapphire interface, which permitted an effective exfoliation of the thick BN film onto other adhesive supports. And this structure resulted in a metal-semiconductor-metal (MSM) device prototype fabricated on BN membrane delaminating from the substrate. MSM photodiode prototype showed low dark current of 2 nA under 100 V, and 100 ± 20% photoconductivity yield for deep UV light illumination. These wafer-scale MOVPE-grown thick BN layers present great potential for the development of deep UV photodetection applications, and even for flexible (opto-) electronics in the future.

Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors

We report a double Schottky junction gas sensor based on a BGaN/GaN superlattice and Pt contacts. NO2 is detected at concentrations from 4.5 to 450 ppm with current responsivity of 6.7 mA/(cm2 × ppm) at 250 °C with a response time of 5 s. The sensor is also selective against NH3 at least for concentrations less than 15 ppm. The BGaN layer at the surface increases surface trap density and trap depth, which improves responsivity and high temperature stability while the GaN layer improves the magnitude of the diode current. The BGaN layers columnar growth structure also causes a Pt morphology that improves O2− diffusion.