Paul Monnier

Ultrafast dynamics of the third-order nonlinear response in a two-dimensional InP-based photonic crystal

We report experimental demonstration of very fast nonlinear response around 1.5μm in an InP-based two-dimensional photonic crystal. The nonlinearity produced by low pump powers via carrier induced nonlinear refractive index, leads to an efficient wavelength shift of a photonic crystal resonance observed in reflectivity. Thus we show that it is possible to obtain round the clock (rise and recovery) switching times shorter than 10ps with contrast ratio higher than 80%.

Hybrid III-V semiconductor/silicon nanolaser

Heterogeneous integration of III-V compound semiconductors on Silicon on Insulator is one the key technology for next-generation on-chip optical interconnects. In this context, the use of photonic crystals lasers represents a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we propose and fabricate very compact laser sources integrated with a passive silicon waveguide circuitry. Using a subjacent Silicon-On-Insulator waveguide, the emitted light from a photonic crystal based cavity laser is efficiently captured. We study experimentally the evanescent wave coupling responsible for the funneling of the emitted light into the silicon waveguide mode as a function of the hybrid structure parameters, showing that 90% of coupling efficiency is possible.

Ultraslow light propagation in an inhomogeneously broadened rare-earth ion-doped crystal.

We show that coherent population oscillations effect allows us to burn a narrow spectral hole (26 Hz) within the homogeneous absorption line of the optical transition of an erbium ion-doped crystal. The large dispersion of the index of refraction associated with this hole permits us to achieve a group velocity as low as 2.7 m/s with a transmission of 40%. We especially benefit from the inhomogeneous absorption broadening of the ions to tune both the transmission coefficient, from 40% to 90%, and the light group velocity from 2.7 m/s to 100 m/s.

All-optical bistable band-edge Bloch modes in a two-dimensional photonic crystal

We demonstrate experimentally all-optical bistable operation in an InP-based two-dimensional photonic crystal slab lying on top of a Bragg reflector. Bistability is obtained around 1550nm, using a low group velocity mode at the band edge of the photonic dispersion characteristic. The origin of the bistable regime is shown to be the fast (275ps relaxation time), electronically induced nonlinear refraction index. A low intensity threshold of 4kW∕cm2 was observed, with a contrast of 65% between the high and low reflectivity states.

Spontaneous mirror-symmetry breaking in coupled photonic-crystal nanolasers

The observation of symmetry breaking in a coupled nanolaser system could yield new types of switchable devices.

Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides

The integration of two-dimensional III-V InP-based photonic crystal and silicon wire waveguides is achieved through an accurate alignment of the two optical levels using mix-and-match deep ultraviolet (DUV)/electron beam lithography. The adhesively bonded structures exhibit an enhancement of light emission at frequencies where low group velocity modes of the photonic crystal line defect waveguides occur. Pulsed laser operation is obtained from these modes at room temperature under optical pumping. The laser light is coupled out of the Si waveguide via grating couplers directly to single mode fiber.

Continuous-wave operation of photonic band-edge laser near 1.55 μm on silicon wafer

We report on the continuous-wave operation of a band edge laser at room temperature near 1.55 μm in an InGaAs/InP photonic crystal. A flat dispersion band-edge photonic mode is used for surface normal operation. The photonic crystal slab is integrated onto a Silicon chip by means of Au/In bonding technology, which combines two advantages, efficient heat sinking and broad band reflectivity.

Tuning a two-dimensional photonic crystal resonance via optical carrier injection

We report on wide wavelength tuning through optical injection of carriers of a photonic resonance observed in reflectivity at 1543 nm in an InP-based two-dimensional photonic crystal slab. An 8-nm blueshift, which represents 20 times the resonance linewidth, is observed when a 4-kW/cm2 intense optical pump is incident on the sample. An analytical model that we developed, based on a coupled-mode nonlinear approach, allows us to describe this phenomenon in detail.

Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

Hybrid InP-based photonic crystal lasers on silicon on insulator wires

We report on InP-based photonic crystal lasers operating at 1.585 μm at room temperature, integrated with and evanescently coupled to silicon on insulator (SOI) waveguides. By optically pumping at 1.18 μm through the SOI wires, pulsed laser emission from line defect photonic crystal waveguides accurately aligned (<30 nm) to the silicon circuitry is demonstrated.