Paul N. Butcher
University of Warwick
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Physics World | 1988
Paul N. Butcher
Small semiconductor devices fabricated by a combination of molecular beam epitaxy and electron beam lithography are the main-spring of current semiconductor research (see, for example, p45) The electronic behaviour of such devices is dominated by the wave-like aspect of the carrier electrons. Layered structures can be grown via MBE with tolerances down to one atomic layer and lithography can provide lateral patterning on a scale of 0.1μm.
Archive | 1990
Paul N. Butcher; David Cotter
Archive | 1990
Paul N. Butcher; David Cotter
Archive | 1990
Paul N. Butcher; David Cotter
Archive | 1990
Paul N. Butcher; David Cotter
Archive | 1990
Paul N. Butcher; David Cotter
Archive | 1990
Paul N. Butcher; David Cotter
Archive | 1990
Paul N. Butcher; David Cotter
Archive | 1990
Paul N. Butcher; David Cotter
Archive | 1990
Paul N. Butcher; David Cotter