Pavel Jelínek

Chemical identification of individual surface atoms by atomic force microscopy

Scanning probe microscopy is a versatile and powerful method that uses sharp tips to image, measure and manipulate matter at surfaces with atomic resolution. At cryogenic temperatures, scanning probe microscopy can even provide electron tunnelling spectra that serve as fingerprints of the vibrational properties of adsorbed molecules and of the electronic properties of magnetic impurity atoms, thereby allowing chemical identification. But in many instances, and particularly for insulating systems, determining the exact chemical composition of surfaces or nanostructures remains a considerable challenge. In principle, dynamic force microscopy should make it possible to overcome this problem: it can image insulator, semiconductor and metal surfaces with true atomic resolution, by detecting and precisely measuring the short-range forces that arise with the onset of chemical bonding between the tip and surface atoms and that depend sensitively on the chemical identity of the atoms involved. Here we report precise measurements of such short-range chemical forces, and show that their dependence on the force microscope tip used can be overcome through a normalization procedure. This allows us to use the chemical force measurements as the basis for atomic recognition, even at room temperature. We illustrate the performance of this approach by imaging the surface of a particularly challenging alloy system and successfully identifying the three constituent atomic species silicon, tin and lead, even though these exhibit very similar chemical properties and identical surface position preferences that render any discrimination attempt based on topographic measurements impossible.

Multicenter approach to the exchange-correlation interactions in ab initio tight-binding methods

An approximate method to calculate exchange-correlation contributions in the framework of first-principles tight-binding molecular dynamics methods has been developed. In the proposed scheme on-site (off-site) exchange-correlation matrix elements are expressed as a one-center (two-center) term plus a correction due to other neighboring atoms. The one-center (two-center) term is evaluated directly, while the correction is calculated using a generalization of the [Sankey-Niklewski Phys. Rev. B 40, 3979 (1989)] approach valid for arbitrary atomiclike basis sets. The proposed scheme for exchange-correlation terms, called the multi-center weighted exchange-correlation density approximation (McWEDA), permits the accurate and computationally efficient calculation of corresponding tight-binding matrices and atomic forces for complex systems. We calculate bulk properties of selected transition (W,Pd), noble (Au), and simple (Al) metals, a semiconductor (Si), and the transition metal oxide

Complex Patterning by Vertical Interchange Atom Manipulation Using Atomic Force Microscopy

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Mechanism of high-resolution STM/AFM imaging with functionalized tips

with the method to demonstrate its flexibility and accuracy.

Origin of High-Resolution IETS-STM Images of Organic Molecules with Functionalized Tips

The ability to incorporate individual atoms in a surface following predetermined arrangements may bring future atom-based technological enterprises closer to reality. Here, we report the assembling of complex atomic patterns at room temperature by the vertical interchange of atoms between the tip apex of an atomic force microscope and a semiconductor surface. At variance with previous methods, these manipulations were produced by exploring the repulsive part of the short-range chemical interaction between the closest tip-surface atoms. By using first-principles calculations, we clarified the basic mechanisms behind the vertical interchange of atoms, characterizing the key atomistic processes involved and estimating the magnitude of the energy barriers between the relevant atomic configurations that leads to these manipulations.

‘All-inclusive’ imaging of the rutile TiO2(110) surface using NC-AFM

High resolution Atomic Force Microscopy (AFM) and Scanning Tunnelling Microscopy (STM) imaging with functionalized tips is well established, but a detailed understanding of the imaging mechanism is still missing. We present a numerical STM/AFM model, which takes into account the relaxation of the probe due to the tip-sample interaction. We demonstrate that the model is able to reproduce very well not only the experimental intra- and intermolecular contrasts, but also their evolution upon tip approach. At close distances, the simulations unveil a significant probe particle relaxation towards local minima of the interaction potential. This effect is responsible for the sharp sub-molecular resolution observed in AFM/STM experiments. In addition, we demonstrate that sharp apparent intermolecular bonds should not be interpreted as true hydrogen bonds, in the sense of representing areas of increased electron density. Instead they represent the ridge between two minima of the potential energy landscape due to neighbouring atoms.

Theoretical analysis of electronic band structure of 2- to 3-nm Si nanocrystals

Recently, the family of high-resolution scanning probe imaging techniques using decorated tips has been complemented by a method based on inelastic electron tunneling spectroscopy (IETS). The new technique resolves the inner structure of organic molecules by mapping the vibrational energy of a single carbon monoxide (CO) molecule positioned at the apex of a scanning tunneling microscope (STM) tip. Here, we explain high-resolution IETS imaging by extending a model developed earlier for STM and atomic force microscopy (AFM) imaging with decorated tips. In particular, we show that the tip decorated with CO acts as a nanoscale sensor that changes the energy of its frustrated translation mode in response to changes of the local curvature of the surface potential. In addition, we show that high resolution AFM, STM, and IETS-STM images can deliver information about the charge distribution within molecules deposited on a surface. To demonstrate this, we extend our mechanical model by taking into account electrostatic forces acting on the decorated tip in the surface Hartree potential.

Structure and stability of semiconductor tip apexes for atomic force microscopy

Non-contact atomic force microscopy (NC-AFM) at true atomic resolution is used to investigate the (110) surface of rutile TiO(2). We are able to simultaneously resolve both bridging oxygen and titanium atoms of this prototypical oxide surface. Furthermore, the characteristic defect species, i.e. bridging oxygen vacancies, single and double hydroxyls as well as subsurface defects, are identified in the very same frame. We employ density functional theory (DFT) calculations to obtain a comprehensive understanding of the relation between the tip apex structure and the observed image contrast. Our results provide insight into the physical mechanisms behind atomic-scale contrast, indicating that electrostatic interaction can lead to a far more complex contrast than commonly assumed.

Chemical structure imaging of a single molecule by atomic force microscopy at room temperature

We introduce a general method which allows reconstruction of electronic band structure of nanocrystals from ordinary real-space electronic structure calculations. A comprehensive study of band structure of a realistic nanocrystal is given including full geometric and electronic relaxation with the surface passivating groups. In particular, we combine this method with large scale density functional theory calculations to obtain insight into the luminescence properties of silicon nanocrystals of up to 3 nm in size depending on the surface passivation and geometric distortion. We conclude that the band structure concept is applicable to silicon nanocrystals with diameter larger than

Mapping the electrostatic force field of single molecules from high-resolution scanning probe images

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